# US 5,707,744 A · Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates

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- Number: US 5,707,744 A
- Document ID: US5707744A
- Status: Granted
- Kind: A
- Application number: 08/578,810
- Filed: 1995-12-26
- Granted: 1998-01-13
- Earliest claimed: 1995-12-26
- Assignees: Xerox Corporation
- Inventors: Tsu-Jae King; Jackson H. Ho
- Web page: https://patentgrep.com/patent/US5707744A

## CPC

- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/2921: {being crystalline insulating materials}
- H10P 14/2922: {being non-crystalline insulating materials, e.g. glass or polymers}
- H10P 14/3211: {Silicon, silicon germanium or germanium}
- H10P 14/3238: {being insulating materials}
- H10P 14/3248: {consisting of two layers}
- H10P 14/3258: {Crystal orientation}
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3466: {Crystal orientation}
- H10P 14/3802: {Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A new polycrystalline silicon film which has been crystallized using a polycrystalline silicon-germanium (poly-Si.sub.1-x Ge.sub.x) capping film to "seed" crystallization of an amorphous silicon film on an upper surface of a substrate. The polycrystalline silicon film has no nucleation sites and a greater number of grain boundaries in the region near the polycrystalline silicon upper surface than in the region near the polycrystalline silicon and substrate upper surface interface. This indicates that crystallization and crystal growth occurred from the polycrystalline silicon upper surface and proceeded in a direction towards the substrate upper surface.

## Claims

### Claim 1

A thin film polycrystalline silicon layer on a substrate comprising:
a) a substrate with an upper and lower surface, and
b) a layer of polycrystalline silicon with an upper surface, on the upper surface of the substrate, having no nucleation sites and a greater number of grain boundaries at the polycrystalline silicon upper surface than at the polycrystalline silicon and substrate upper surface interface indicating that crystallization and crystal growth occurred from the polycrystalline silicon upper surface and proceeded in a direction towards the substrate upper surface.

### Claim 2 (depends on 1)

The thin film polycrystalline silicon layer on a substrate of claim 1 wherein the substrate comprises quartz.

### Claim 3 (depends on 1)

The thin film polycrystalline silicon layer on a substrate of claim 1 wherein the substrate comprises glass.

### Claim 4 (depends on 1)

The thin film polycrystalline silicon layer on a substrate of claim 1 wherein the substrate comprises silicon with an insulating layer at the upper surface in contact with the lower surface of the polycrystalline silicon.

### Claim 5 (depends on 4)

The thin film polycrystalline silicon layer on a substrate of claim 4 wherein the insulating material comprises SiO.sub.2.