# US 5,707,686 A · Method for preventing moisture from being absorbed into impurity-contained insulating layer

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- Number: US 5,707,686 A
- Document ID: US5707686A
- Status: Granted
- Kind: A
- Application number: 08/558,585
- Filed: 1995-10-31
- Granted: 1998-01-13
- Earliest claimed: 1994-11-02
- Assignees: Hyundai Electronics Industries Co., Ltd.
- Inventors: Sahng Kyoo Lee
- Web page: https://patentgrep.com/patent/US5707686A

## CPC

- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- B05D 5/00: Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- H10W 20/48: Insulating materials thereof
- Y10S 438/976: Temporary protective layer
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A method for preventing moisture from being absorbed into an impurity-contained insulating layer is disclosed, including the steps of: forming an impurity-contained insulating layer on a substrate; and coating a material of an alcohol group on the impurity-contained insulating layer, to form an alcohol film.

## Claims

### Claim 1

A method for preventing moisture from being absorbed into an insulating layer of a semiconductor device containing impurities, comprising the steps of:
forming a glass containing boron and/or phosphorous containing insulating layer on a substrate of a semiconductor device; and
coating an alcohol on said impurity-containing insulating layer, to form an alcohol film,
wherein said alcohol is a member selected from the group consisting of ethyl alcohol, isopropyl alcohol and methyl alcohol.

### Claim 2 (depends on 1)

The method as claimed in claim 1, wherein said impurity-containing insulating layer is BPSG layer.

### Claim 3 (depends on 1)

The method as claimed in claim 1,
wherein said alcohol film is formed by spin coating at 0 to 500 revolutions per minute for 5 to 20 seconds, and drying.