# US 5,707,498 A · Avoiding contamination from induction coil in ionized sputtering

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- Number: US 5,707,498 A
- Document ID: US5707498A
- Status: Granted
- Kind: A
- Application number: 08/682,845
- Filed: 1996-07-12
- Granted: 1998-01-13
- Earliest claimed: 1996-07-12
- Assignees: Applied Materials, Inc.
- Inventors: Kenny King-Tai Ngan
- Web page: https://patentgrep.com/patent/US5707498A

## CPC

- H01J 37/321: {the radio frequency energy being inductively coupled to the plasma}
- C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)}
- C23C 14/358: {Inductive energy}
- C23C 14/564: {Means for minimising impurities in the coating chamber such as dust, moisture, residual gases}
- H01J 37/32559: {Protection means, e.g. coatings}
- H01J 37/34: operating with cathodic sputtering (H01J37/36 takes precedence {; methods of cathodic sputtering C23C14/34})
- H01J 2237/022: Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A method of deposited a film on a semiconductor workpiece in an inductively-coupled plasma sputtering chamber so as to avoid contamination of the film by material sputtered off the induction coil. This is accomplished by alternately performing two processes in the chamber: (1) a pasting process performed with no RF power applied to the induction coil, and (2) an inductively-coupled plasma sputter deposition process for depositing a desired film on a semiconductor workpiece. The pasting process deposits material from the target onto the surface of the induction coil, thereby forming a protective coating on the coil. To the extent the coating material is sputtered off the induction coil during the subsequent ionized sputtering process, it will be the same as the material being sputtered off the target, and therefore it will not contaminate the film being deposited on the semiconductor workpiece. After a certain number of semiconductor workpieces are processed with the ionized sputtering process, the protective coating on the induction coil will thin enough in spots to risk exposing the underlying material of the coil. At that point, the film deposition process is terminated, and the pasting process is repeated. After the pasting process deposits a coating on the coil, the film deposition process can resume.

## Claims

### Claim 1

A method of operating an inductively-coupled plasma sputter deposition chamber for depositing films on semiconductor workpieces, comprising the steps of:
(a) providing an inductively-coupled plasma sputter deposition chamber having a sputtering target, an induction coil, and a workpiece support chuck having a surface for mounting a semiconductor workpiece;
(b) depositing a protective coating of target material on a surface of the induction coil, including the sub-steps of
(i) providing a sputtering gas within the chamber,
(ii) maintaining a vacuum inside the chamber, and
(iii) applying electrical power to the target so as to excite the sputtering gas into a plasma state near the target and sputter material from the surface of the target,
(iv) while not applying RF electrical power to the induction coil;
(c) subsequently depositing a film on one or more semiconductor workpieces, including the sub-steps of
(i) mounting one or more semiconductor workpieces on the chuck within the chamber;
(ii) providing a sputtering gas within the chamber,
(iii) maintaining a vacuum inside the chamber,
(iv) applying electrical power to the target so as to excite the sputtering gas into a plasma state near the target and sputter material from the surface of the target, and
(v) applying RF electrical power to the induction coil.

### Claim 2 (depends on 1)

A method according to claim 1, further comprising terminating the step of depositing a film before the surface of the induction coil beneath the protective coating is exposed by sputtering of the coating.

### Claim 3 (depends on 2)

A method according to claim 2, further comprising the step of:
after terminating the step of depositing a film, repeating the steps of depositing a protective coating and subsequently depositing a film.

### Claim 4 (depends on 1)

A method according to claim 1 , wherein the step of depositing a film further comprises applying a negative DC bias voltage to said one or more workpieces.

### Claim 5 (depends on 1)

A method according to claim 1, wherein the step of depositing a protective coating further comprises covering the workpiece mounting surface of the chuck.

### Claim 6 (depends on 5)

A method according to claim 5, wherein the step of covering the workpiece mounting surface of the chuck comprises mounting a dummy semiconductor wafer on the chuck.

### Claim 7 (depends on 1)

A method according to claim 1, wherein the step of depositing a film further comprises sequentially mounting each one of said workpieces on the chuck and sequentially depositing the film on each workpiece.

### Claim 8

An inductively-coupled plasma sputter deposition chamber for depositing films on semiconductor workpieces, comprising:
a vacuum chamber;
a sputtering target mounted within the chamber;
a workpiece support chuck mounted within the chamber, said chuck having a surface for mounting a semiconductor workpiece;
an induction coil mounted within the chamber;
a gas inlet for supplying a sputtering gas to the interior of the chamber;
a first electrical power supply connected to the target, wherein said first power supply provides sufficient electrical power to the target to excite the sputtering gas into a plasma state near the target and sputter material from the surface of the target;
a second electrical power supply connected to the induction coil, said second power supply having an on state during which it supplies radio frequency power to the induction coil and an off state during which it does not supply radio frequency power to the induction coil; and
a controller circuit connected to control the first and second power supplies, wherein the controller circuit sequentially operates in a first pasting mode followed by a second deposition mode, wherein
during the pasting mode the controller circuit turns off the second power supply and activates the first power supply, whereby a protective coating of target material deposits on a surface of the induction coil, and
during the deposition mode the controller circuit turns on the second power supply and activates the first power supply, whereby a film is deposited on any semiconductor workpiece mounted on the chuck.

### Claim 9 (depends on 8)

A chamber according to claim 8, wherein the controller circuit terminates the deposition mode of operation before the surface of the induction coil beneath the protective coating is exposed by sputtering of the coating.

### Claim 10 (depends on 9)

A chamber according to claim 9, wherein, after terminating the deposition mode, the controller repeats the pasting mode and then the deposition mode.

### Claim 11 (depends on 8)

A chamber according to claim 8, further comprising a third electrical power supply for applying a negative DC bias voltage to any workpieces mounted on the chuck.

### Claim 12 (depends on 8)

A chamber according to claim 8, further comprising a cover apparatus for covering the workpiece mounting surface of the chuck during the pasting mode of operation.

### Claim 13 (depends on 12)

A chamber according to claim 12, wherein the cover apparatus comprises apparatus for mounting a dummy semiconductor wafer on the chuck.