Metallized pad polishing process
AssigneeMotorola, Inc.
InventorsCharles W. Stager, Thomas S. Kobayashi, Joseph E. Page, Mark A. Zaleski, Paul M. Winebarger
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Abstract
A chemical-mechanical-polishing (CMP) process in which a metal interconnect material (47) is polished to form a metal plug (48) includes the application of titanium to the surface of a polishing pad (14) of a polishing apparatus (10). Titanium metal is applied to the surface of the polishing pad (14) by either abrasively applying titanium by use of a titanium block (32) attached to a rotating disk (26), or by a titanium body (23, 25) integrated with a carrier ring (23). Alternatively, titanium can be applied by impregnating a felt layer (52) with titanium particles (56), or by adding titanium directly to the polishing slurry (50).
Claims8
A process for fabricating a semiconductor device comprising the steps of:
- providing a semiconductor substrate having a surface thereon;
- providing a polishing pad having a polishing surface thereon;
- providing a block having a titanium surface;
- contacting the polishing surface with the titanium surface to apply titanium to the polishing surface;
- and
- polishing the surface of the semiconductor substrate by
- abrasively contacting the polishing surface to the surface of the semiconductor substrate.
A process for fabricating a semiconductor device comprising the steps of:
- providing a semiconductor substrate having a metal surface thereon;
- providing a polishing pad having a polishing surface thereon;
- providing a block having a titanium surface;
- abrasively applying titanium to the polishing surface by
- contacting the polishing pad with the titanium surface of the block;
- and
- polishing the metal surface by abrasively contacting the polishing surface to the metal surface.
Dependencies are inferred from the claim text.