# US 5,707,487 A · Method of manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,707,487 A - Document ID: US5707487A - Status: Granted - Kind: A - Application number: 08/332,504 - Filed: 1994-10-31 - Granted: 1998-01-13 - Earliest claimed: 1991-01-22 - Assignees: Kabushiki Kaisha Toshiba - Inventors: Masaru Hori; Hiroyuki Yano; Keiji Horioka; Haruo Okano - Web page: https://patentgrep.com/patent/US5707487A ## CPC - G03F 7/094: {Multilayer resist systems, e.g. planarising layers} - H10P 50/692: {characterised by their composition, e.g. multilayer masks or materials} - H10P 50/71: {using masks for conductive or resistive materials} - H10P 50/73: {using masks for insulating materials} - H10P 14/6329: {using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition} - H10P 14/6332: {using thermal evaporation (formation of epitaxial layers by a deposition process H10P14/6349)} - H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)} - H10P 14/6902: {composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon} - Y10S 438/95: Multilayer mask including nonradiation sensitive layer - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract According to this invention, a method of manufacturing a semiconductor device includes the steps of forming a carbon film on a surface of a substrate, forming a mask pattern on the carbon film, etching the carbon film along the mask pattern to form a carbon film pattern, and reactive ion etching the substrate along the carbon film pattern using a high density plasma produced by application of a high frequency and a magnetic field, application of a microwave, irradiation of an electron beam, application of a high frequency of not less than 27 MHz, or application of a inductive coupled high frequency. ## Claims ### Claim 1 A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises aluminum; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etching said layer along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound; wherein said plasma is produced by a member selected from the group consisting of (i) application of an alternating current and a magnetic field, (ii) application of microwaves, (iii) irradiation by an electron beam, (iv) application of a radio frequency of 27 MHz or more, and (v) application of an inductively coupled high frequency; and wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V. ### Claim 2 (depends on 1) A method according to claim 1, wherein said carbon film is formed by a method selected from the group consisting of sputtering, vacuum evaporation and chemical vapor deposition. ### Claim 3 (depends on 1) A method according to claim 1, wherein a temperature of said substrate is controlled within a range of -100.degree. C. to 50.degree. C. ### Claim 4 (depends on 1) A method according to claim 1, wherein said reactive ion etching step is performed such that a gas comprising chlorine is used as an etching gas. ### Claim 5 (depends on 1) A method according to claim 1, wherein said DC voltage is not less than 30V. ### Claim 6 (depends on 1) A method according to claim 1, wherein the step of etching said carbon film is performed by reactive ion etching using oxygen gas as an etching gas. ### Claim 7 (depends on 1) A method according to claim 1, wherein said substrate comprises a SiO.sub.2 film on silicon, and said layer is on said SiO.sub.2 film. ### Claim 8 (depends on 1) A method according to claim 1, wherein said layer consists of aluminum or an aluminum alloy. ### Claim 9 (depends on 1) A method according to claim 1, further comprising the step of exposing said layer to a plasma comprising oxygen gas before forming said carbon film. ### Claim 10 (depends on 1) A method according to claim 1, wherein said plasma is produced by a member selected from the group consisting of: (ii) application of microwaves, (iii) irradiation by an electron beam, and (v) application of an inductively coupled high frequency. ### Claim 11 A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises silicon; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etchings of said layer along said carbon film pattern, with a plasma of a gas comprising a halogen or a halogen bearing compound; wherein said plasma is produced by a member selected from the group consisting of: (i) application of an alternating current and a magnetic field, (ii) application of microwaves (iii) irradiation by an electron beam, (iv) application of a radio frequency of 27 MHz or more, and (v) application of an inductively coupled high frequency; wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 100V. ### Claim 12 (depends on 11) A method according to claim 11, wherein said reactive ion etching step is performed such that a gas comprising chlorine or bromine is used as an etching gas. ### Claim 13 (depends on 11) A method according to claim 11, wherein said DC voltage is not less than 30V. ### Claim 14 (depends on 11) A method according to claim 11, wherein the step of etching said carbon film is performed by reactive ion etching using oxygen gas as an etching gas. ### Claim 15 (depends on 11) A method according to claim 11, wherein said substrate comprises a SiO.sub.2 film on silicon, and said layer is on said SiO.sub.2 film. ### Claim 16 (depends on 11) A method according to claim 11, wherein said layer consists essentially of polysilicon. ### Claim 17 (depends on 11) A method according to claim 11, wherein said plasma is produced by a member selected from the group consisting of: (ii) application of microwaves, (iii) irradiation by an electron beam, and (v) application of an inductively coupled high frequency. ### Claim 18 A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises aluminum; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etching said layer along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound; wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V. ### Claim 19 (depends on 18) A method according to claim 18, wherein said substrate comprises a SiO.sub.2 film on silicon, and said layer is on said SiO.sub.2 film. ### Claim 20 A method of manufacturing a semiconductor device, comprising the steps of: forming a carbon film on a substrate; forming a resist pattern on said carbon film; etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern; and reactive ion etching said substrate along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound; wherein said plasma is produced by a member selected from the group consisting of (i) application of an alternating current and a magnetic field (ii) application of microwaves, (iii) irradiation by an electron beam, (iv) application of a radio frequency of 27 MHz or more, and (v) application of an inductively coupled high frequency; and wherein either: (a) a surface of said substrate comprises aluminum, and said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V; or (b) a surface of said substrate comprises silicon, and said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 100V.