# US 5,706,306 A · VCSEL with distributed Bragg reflectors for visible light

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 5,706,306 A
- Document ID: US5706306A
- Status: Granted
- Kind: A
- Application number: 08/616,359
- Filed: 1996-03-15
- Granted: 1998-01-06
- Earliest claimed: 1996-03-15
- Assignees: Motorola, Inc.
- Inventors: Wenbin Jiang; Jamal Ramdani; Michael S. Lebby
- Web page: https://patentgrep.com/patent/US5706306A

## CPC

- H01S 5/18361: {Structure of the reflectors, e.g. hybrid mirrors}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

An article and method for making a vertical cavity surface emitting laser (101) is provided. The vertical cavity surface emitting laser includes a semiconductor substrate (102) having a first surface (105) on which a first set of distributed Bragg reflectors (103) are deposited. The distributed Bragg reflectors (103) are made of alternating layers of indium aluminum gallium phosphide and aluminum arsenide. An active region (106) is disposed on the distributed Bragg reflectors with a subsequent of and active region (106) and another cladding region (107). Another distributed Bragg reflector (103) is deposited on cladding region (107).

## Claims

### Claim 1

A VCSEL with distributed Bragg reflectors for visible light comprising:
a semiconductive substrate having a first surface and a second surface;
a first distributed Bragg reflector disposed on the first surface of the semiconductor substrate, the first distributed Bragg reflector including alternating layers of indium aluminum gallium phosphide and aluminum arsenide with a percent composition of indium in the indium aluminum gallium phosphide ranging from 44 percent to 54 percent and a percent composition of gallium in the indium aluminum gallium phosphide ranging from 41 percent to 61 percent, and with the first distributed Bragg reflector having a first dopant type and a first concentration;
a first cladding region disposed on the first distributed Bragg reflector;
an active region disposed on the cladding region;
a second cladding region disposed on the active region;
a second distributed Bragg reflector disposed on the second cladding region, the second distributed Bragg reflector including alternating layers of indium aluminum gallium phosphide and aluminum arsenide with a percent composition of indium in the indium aluminum gallium phosphide ranging from 44 percent to 54 percent and a percent composition of gallium in the indium aluminum gallium phosphide ranging from 41 percent to 61 percent, and with the second distributed Bragg reflector having a second dopant type and a second dopant concentration; and
a contact region disposed on the second distributed Bragg reflector, whereby light generated in the active region emanates from the VCSEL as visible light.

### Claim 2 (depends on 1)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 1 wherein the first dopant type is an N-type.

### Claim 3 (depends on 2)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 2 wherein the N-type dopant is selenium or silicon.

### Claim 4 (depends on 2)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 2 wherein the N-type dopant is silicon.

### Claim 5 (depends on 1)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 1 wherein the second dopant type is a P-type.

### Claim 6 (depends on 5)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 5 wherein the P-type dopant is carbon.

### Claim 7 (depends on 5)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 5 wherein the P-type dopant is zinc.

### Claim 8 (depends on 1)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 1 wherein the percent composition of indium in the indium aluminum gallium phosphide ranges from 44 percent to 54 percent and wherein the percent composition of gallium in the indium aluminum gallium phosphide ranges from 46 percent to 56 percent.

### Claim 9 (depends on 8)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 8 wherein the percent composition of indium in the indium aluminum gallium phosphide ranges from 46 percent to 54 percent and wherein a percent composition of gallium in the indium aluminum gallium phosphide ranges from 46 percent to 54 percent.

### Claim 10 (depends on 1)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 1 wherein a percent composition of aluminum in the indium aluminum gallium phosphide ranges from greater than zero percent to 54 percent.

### Claim 11 (depends on 10)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 10 wherein the percent composition of aluminum in the indium aluminum gallium phosphide ranges from 5 percent to 15 percent.

### Claim 12 (depends on 11)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 11 wherein the percent composition of aluminum in the indium aluminum gallium phosphide ranges from 8 percent to 12 percent.

### Claim 13 (depends on 1)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 1 wherein the first cladding region further comprises:
a doped layer of indium aluminum gallium phosphide disposed on the first distributed Bragg reflector; and
a undoped layer of indium aluminum gallium phosphide overlying the doped layer of indium aluminum gallium phosphide.

### Claim 14 (depends on 13)

A VCSEL with distributed Bragg reflectors for visible light as claimed in claim 13 wherein the active region further comprises:
a first barrier layer of indium aluminum gallium phosphide disposed on the undoped layer of indium aluminum gallium phosphide disposed on the first distributed Bragg reflector;
a quantum well layer of indium aluminum gallium phosphide overlying the first barrier of undoped layer of aluminum gallium phosphide; and
a second barrier layer of indium aluminum gallium phosphide disposed on the quantum well layer of indium aluminum gallium phosphide.

### Claim 15

A VCSEL with distributed Bragg reflectors for visible light comprising:
a semiconductive substrate having a first surface and a second surface;
a first distributed Bragg reflector disposed on the first surface of the semiconductive substrate, the first distributed Bragg reflector comprising alternating layers of indium aluminum gallium phosphide and indium aluminum phosphide with the first distributed Bragg reflector having a first dopant type and concentration;
a first cladding region disposed on the first distributed Bragg reflectors;
an active region disposed on the cladding region;
a second cladding region disposed on the active region;
a second distributed Bragg reflector disposed on the second cladding region, the second distributed Bragg reflector comprising alternating layers of indium aluminum gallium phosphide and indium aluminum phosphide with the second distributed Bragg reflector having a second dopant type and a second dopant concentration; and
a contact region disposed on the second distributed Bragg reflector, whereby light generated in the active region emanates from the VCSEL as visible light.