# US 5,706,302 A · Temperature control type semiconductor laser device

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- Number: US 5,706,302 A
- Document ID: US5706302A
- Status: Granted
- Kind: A
- Application number: 08/616,051
- Filed: 1996-03-14
- Granted: 1998-01-06
- Earliest claimed: 1995-03-14
- Assignees: NEC Corporation
- Inventors: Haruhito Shimizu
- Web page: https://patentgrep.com/patent/US5706302A

## CPC

- H01S 5/02251: using optical fibres
- H01S 5/02415: {by using a thermo-electric cooler [TEC], e.g. Peltier element}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

A Peltier cooler includes a plurality of Peltier elements, first and second ceramic substrates that are disposed to hold the Peltier elements through metallized electrodes formed inside the ceramic substrates and to electrically connect the Peltier elements in series, and first and second metal substrates respectively fixed to the first and second ceramic substrates by brazing, so as to hold them. The metal substrates are fixable to a substrate on which optical components are mounted and a semiconductor laser package, by yttrium-aluminum-garnet (YAG) laser welding. The YAG laser welding and the brazing operation eliminate the use of low-temperature solder, where creeps may occur.

## Claims

### Claim 1

A temperature control semiconductor laser device comprising:
electronic temperature control means comprising:
a temperature control element for performing temperature control based on a control signal that is externally supplied at electrodes thereof;
holding means for holding the temperature control element; and
fixing means, coupled to the holding means by brazing, for fixing said holding means;
a package having a bottom portion to which welding portions of the fixing means are fixed by welding; and
a semiconductor laser that is subjected to the temperature control by the electronic temperature control means.

### Claim 2 (depends on 1)

The temperature control semiconductor laser device according to claim 1, wherein the semiconductor laser is placed on a mounting substrate that is welded to part of the fixing means.

### Claim 3 (depends on 2)

The temperature control semiconductor laser device according to claim 2, wherein the temperature control element comprises a Peltier element.

### Claim 4 (depends on 3)

The temperature control semiconductor laser device according to claim 3, wherein the temperature control element comprises a plurality of Peltier elements electrically connected to each other in series and arranged in matrix form.

### Claim 5 (depends on 4)

The temperature control semiconductor laser device according to claim 4, wherein the holding means comprises first and second ceramic substrates respectively disposed a first and second ends of the temperature control element.

### Claim 6 (depends on 5)

The temperature control semiconductor laser device according to claim 5, wherein the ceramic substrates include AlN substrates.

### Claim 7 (depends on 5)

The temperature control semiconductor laser device according to claim 5, wherein the ceramic substrates include Al.sub.2 O.sub.3 substrates.

### Claim 8 (depends on 5)

The temperature control semiconductor laser device according to claim 5, wherein the fixing means comprises a plurality of metal substrates.

### Claim 9 (depends on 8)

The temperature control semiconductor laser device according to claim 8, wherein the plurality of metal substrates include the welding portions that are thinner than the other portions.

### Claim 10 (depends on 8)

The temperature control semiconductor laser device according to claim 8, wherein the plurality of metal substrates include FeNiCo alloy substrates.

### Claim 11 (depends on 8)

The temperature control semiconductor laser device according to claim 8, wherein the plurality of metal substrates include SUS304 substrates.

### Claim 12 (depends on 5)

The temperature control semiconductor laser device according to claim 5, wherein the holding means is connected with SnSb solder.

### Claim 13 (depends on 5)

The temperature control semiconductor laser device according to claim 5, wherein the holding means is connected with SnAg solder.

### Claim 14 (depends on 8)

The temperature control semiconductor laser device according to claim 8, wherein the brazing for fixing the holding means to the fixing means includes AgCu brazing.

### Claim 15 (depends on 8)

The temperature control semiconductor laser device according to claim 8, wherein the brazing for fixing the holding means to the fixing means includes AgGe brazing.

### Claim 16 (depends on 2)

The temperature control semiconductor laser device according to claim 2, further comprising an optical fiber for leading out light that is emitted from the semiconductor laser.