# US 5,706,172 A · Stacked semiconductor package having supporting bars and a socket therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,706,172 A - Document ID: US5706172A - Status: Granted - Kind: A - Application number: 08/554,900 - Filed: 1995-11-09 - Granted: 1998-01-06 - Earliest claimed: 1995-08-16 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Kyu Jin Lee - Web page: https://patentgrep.com/patent/US5706172A ## CPC - H10W 90/00: Package configurations - H10W 70/40: Leadframes - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 72/801: {Interconnections on sidewalls of containers} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A stacked semiconductor package including a plurality of semiconductor devices stacked over one another and having outer leads, which are extended from sides of the devices and bent downwardly. A plurality of supports are vertically interposed between the outer leads. The supports electrically connect the outer leads in vertical direction only. ## Claims ### Claim 1 A stacked three-dimensional semiconductor package, comprising: a plurality of semiconductor devices having sides, said semiconductor devices being stacked over one another as a stack and each having a plurality of outer leads, which are extended from said sides of respective ones of said devices and bent downwardly so a to form a plurality of vertical columns thereof distributed about the periphery of said stack; and a plurality of support bars vertically interposed between said columns of said outer leads, each of said support bars electrically connecting the outer leads in only a respective same said column thereof; each of said being made of a conductive material, a first vertically extensive portion thereof being coated with an insulating material, and a second vertically extensive portion thereof being plated with lead (Pb) arranged to provide said electrically connecting of respective ones of said outer leads in a respective said column. ### Claim 2 A stacked three-dimensional semiconductor package, comprising: a plurality of semiconductor devices having sides, said semiconductor devices being stacked over one another as a stack and each having a plurality of outer leads, which are extended from said sides of respective ones of said devices and bent downwardly so a to form a plurality of vertical columns thereof distributed about the periphery of said stack; and a plurality of support bars vertically interposed between said columns of said outer leads, each of said support bars electrically connecting the outer leads in only a respective same said column thereof; each of said support bars being made of a non-conductive material, a vertically extensive portion thereof being plated with a conductive metal and with lead (Pb), in turn and arranged to provide said electrically connecting of respective ones of said outer leads in a respective said column. ### Claim 3 A stacked three-dimensional semiconductor package, comprising: a plurality of semiconductor devices having sides, said semiconductor devices being stacked over one another as a stack and each having a plurality of outer leads, which are extended from said sides of respective ones of said devices and bent downwardly so a to form a plurality of vertical columns thereof distributed about the periphery of said stack; and a plurality of support bars vertically interposed between said columns of said outer leads, each of said support bars electrically connecting the outer leads in only a respective same said column thereof; each of said support bars being made of a non-conductive material, and two laterally spaced vertically extensive portions thereof each being plated with a conductive metal and with lead (Pb), in turn and being respectively arranged to provide said electrically connecting of respective ones of said outer leads in respective ones of said columns. ### Claim 4 (depends on 2) The package of claim 2, wherein said conductive metal is one selected from the group consisting of copper, aluminum, gold and ferrous-nickel alloy. ### Claim 5 (depends on 3) The package of claim 3, wherein said conductive metal is one selected from the group consisting of copper, aluminum, gold and ferrous-nickel alloy. ### Claim 6 A stacked package socket comprising a plurality of semiconductor devices stacked over one another and having outer leads, which are extended from sides of said devices and bent downwardly; a circuit substrate formed with a circuit pattern; and a socket lid, said semiconductor devices being stacked by way of a plurality of supporting means, which vertically interposed between said outer leads, and electrically connect the outer leads in vertical direction only. ### Claim 7 (depends on 6) The package of claim 6, wherein said supporting means is made of a conductive material, and half side thereof is coated with an insulating material and the other half side is plated with lead (Pb). ### Claim 8 (depends on 6) The package of claim 6, wherein said supporting means is made of a non-conductive material, and one side end thereof is plated with a conductive metal and with lead (Pb) in turn. ### Claim 9 (depends on 6) The package of claim 6, wherein said supporting means is made of a non-conductive material, and both side ends thereof is plated with a conductive metal and with lead (Pb) in turn. ### Claim 10 (depends on 9) The package of claim 9, wherein said conductive metal is one selected from the group consisting of copper, aluminum, gold and ferrous-nickel alloy. ### Claim 11 (depends on 9) The package of claim 9, wherein said conductive metal is one selected from the group consisting of copper, aluminum, gold and ferrous-nickel alloy. ### Claim 12 A stacked three-dimensional semiconductor package, comprising: a plurality of semiconductor devices having sides, said semiconductor devices being stacked over one another as a stack and each having a plurality of outer leads, which are extended from said sides of respective ones of said devices and bent downwardly so as to form a plurality of vertical columns thereof distributed about the periphery of said stack; and a plurality of support bars vertically interposed between columns of said outer leads, each of said support bars electrically connecting the outer leads in only a respective same said column thereof.