# US 5,705,963 A · LC element comprising a reverse biased pn junction

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 5,705,963 A
- Document ID: US5705963A
- Status: Granted
- Kind: A
- Application number: 08/358,770
- Filed: 1994-12-19
- Granted: 1998-01-06
- Earliest claimed: 1993-12-29
- Assignees: T.I.F. Co., Ltd.
- Inventors: Takeshi Ikeda; Akira Okamoto
- Web page: https://patentgrep.com/patent/US5705963A

## CPC

- H03H 7/0115: {comprising only inductors and capacitors (H03H7/075, H03H7/09, H03H7/12, H03H7/13 take precedence)}
- H10D 84/00: Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H03H 2001/0064: {comprising semiconductor material}
- H03H 2001/0078: {comprising spiral inductor on a substrate}
- H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An LC element for use with a semiconductor device features excellent attenuation characteristics. The element includes a pn junction that has a predetermined shape and which is formed near the surface of a semiconductor substrate. The predetermined shapes include a spiral shape, a meander shape, a straight shape, and a curved shape. An inductor electrode is formed on the pn junction, and the pn junction is reverse biased with a specified voltage to form a distributed capacitor having a desired capacitance. One of the p and n layers functions as an inductor. The element is easily manufactured and requires minimal assembly, and may also be integrally formed as part of an IC or LSI device.

## Claims

### Claim 1

An LC element comprising:
an inductor electrode having a predetermined shape formed on a surface of a semiconductor substrate, and
a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region, and functions as a capacitor when used in the reverse bias state,
said first region is directly connected to said inductor electrode,
said inductor electrode and said second region respectively comprise inductors,
a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
at least one of said inductor electrode and said second region is used as a signal transmission line and
the second region is not directly connected along its length to said inductor electrode.

### Claim 2 (depends on 1)

An LC element according to claim 1 wherein: said inductor electrode has a spiral shape.

### Claim 3 (depends on 2)

An LC element according to claim 2 further comprising:
first and second input/output electrodes provided near the respective ends of one of said inductor electrode and said second region of said pn junction layer, and
third and fourth input/output electrodes provided near the respective ends of the other one of said inductor electrode and said second region of said pn junction layer, wherein:
said inductor electrode and the second region of said pn junction layer respectively function as signal transmission lines, thereby enabling use as a common mode type element.

### Claim 4 (depends on 3)

An LC element according to claim 3 wherein:
at least said second region of said pn junction layer is formed different in length than said inductor electrode, thereby producing partial correspondence between said inductor electrode and said second region of the pn junction layer.

### Claim 5 (depends on 3)

An LC element according to claim 3 wherein:
the capacitance of said pn junction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 6 (depends on 3)

An LC element according to claim 3 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 7 (depends on 3)

An LC element according to claim 3 formed in a unitized manner as a portion of substrate wherein:
at least one of said inductor electrode and the second region of said pn junction layer is inserted into one of a signal line and a power supply line.

### Claim 8 (depends on 1)

An LC element according to claim 1 wherein:
said inductor electrode has a straight line shape.

### Claim 9 (depends on 8)

An LC element according to claim 8 further comprising:
first and second input/output electrodes provided near the respective ends of one of said inductor electrode and said second region of said pn junction layer, and
third and fourth input/output electrodes provided near the respective ends of the other one of said inductor electrode and said second region of said pn junction layer, wherein:
said inductor electrode and the second region of said pn junction layer respectively function as signal transmission lines, thereby enabling use as a common mode type element.

### Claim 10 (depends on 9)

An LC element according to claim 9 wherein:
the capacitance of said pn unction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 11 (depends on 1)

An LC element according to claim 1 further comprising:
first and second input/output electrodes provided near the respective ends of one of said inductor electrode and said second region of said pn junction layer, and
third and fourth input/output electrodes provided near the respective ends of the other one of said inductor electrode and said second region of said pn junction layer, wherein:
said inductor electrode and the second region of said pn junction layer respectively function as signal transmission lines, thereby enabling use as a common mode type element.

### Claim 12 (depends on 11)

An LC element according to claim 11 wherein:
at least said second region of said pn junction layer is formed different in length than said inductor electrode, thereby producing partial correspondence between said inductor electrode and said second region of the pn junction layer.

### Claim 13 (depends on 11)

An LC element according to claim 11 wherein:
the capacitance of said pn junction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 14 (depends on 11)

An LC element according to claim 11 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 15 (depends on 11)

An LC element according to claim 11 formed in a unitized manner as a portion of substrate wherein:
at least one of said inductor electrode and the second region of said pn junction layer is inserted into one of a signal line and a power supply line.

### Claim 16 (depends on 1)

An LC element according to claim 1 wherein:
said inductor electrode has a curved line shape.

### Claim 17 (depends on 16)

An LC element according to claim 16 further comprising:
first and second input/output electrodes provided near the respective ends of one of said inductor electrode and said second region of said pn junction layer, and
third and fourth input/output electrodes provided near the respective ends of the other one of said inductor electrode and said second region of said pn junction layer, wherein:
said inductor electrode and the second region of said pn junction layer respectively function as signal transmission lines, thereby enabling use as a common mode type element.

### Claim 18 (depends on 17)

An LC element according to claim 17 wherein:
the capacitance of said pn junction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 19 (depends on 1)

An LC element according to claim 1 wherein:
said inductor electrode has a meander shape.

### Claim 20 (depends on 19)

An LC element according to claim 19 further comprising:
first and second input/output electrodes provided near the respective ends of one of said inductor electrode and said second region of said pn junction layer, and
third and fourth input/output electrodes provided near the respective ends of the other one of said inductor electrode and said second region of said pn junction layer, wherein:
said inductor electrode and the second region of said pn junction layer respectively function as signal transmission lines, thereby enabling use as a common mode type element.

### Claim 21 (depends on 20)

An LC element according to claim 20 wherein:
at least said second region of said pn junction layer is formed different in length than said inductor electrode, thereby producing partial correspondence between said inductor electrode and said second region of the pn junction layer.

### Claim 22 (depends on 20)

An LC element according to claim 20 wherein:
the capacitance of said pn unction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 23 (depends on 20)

An LC element according to claim 20 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 24 (depends on 20)

An LC element according to claim 20 formed in a unitized manner as a portion of substrate wherein:
at least one of said inductor electrode and the second region of said pn junction layer is inserted into one of a signal line and a power supply line.

### Claim 25

An LC element comprising
an inductor electrode having a spiral shape formed on a surface of a semiconductor substrate, and
a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region and functions as a capacitor when used in the reverse bias state,
said first region is directly connected to said inductor electrode,
said inductor electrode and said second region respectively comprise inductors,
a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of the pn junction layer, and
a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
said ground electrode is connected to at least one of a fixed potential power supply and a ground.

### Claim 26 (depends on 25)

An LC element according to claim 25 wherein:
the capacitance of said pn junction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 27 (depends on 25)

An LC element according to claim 25 wherein:
at least said second region of said pn junction layer is formed different in length than said inductor electrode, thereby producing partial correspondence between said inductor electrode and said second region of the pn junction layer.

### Claim 28 (depends on 25)

An LC element according to claim 25 wherein:
at least one of said inductor electrode and said second region of said pn junction layer is divided into a plurality of segments, and each divided segment is respectively connected electrically.

### Claim 29 (depends on 25)

An LC element according to claim 25 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 30 (depends on 25)

An LC element according to claim 25 formed in a unitized manner as a portion of substrate wherein:
at least one of said inductor electrode and the second region of said pn junction layer is inserted into one of a signal line and a power supply line.

### Claim 31

An LC element comprising:
an inductor electrode having a predetermined shape formed on a surface of a semiconductor substrate, and
a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region, and functions as a capacitor when used in the reverse bias state,
said first region is directly connected to said inductor electrode,
said inductor electrode and said second region respectively comprise inductors,
a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of said pn junction layer, and
a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
said ground electrode is connected to at least one of a fixed potential power supply and a ground.

### Claim 32 (depends on 31)

An LC element according to claim 31 wherein:
at least said second region of said pn junction layer is formed different in length than said inductor electrode, thereby producing partial correspondence between said inductor electrode and said second region of the pn junction layer.

### Claim 33 (depends on 31)

An LC element according to claim 31 wherein:
at least one of said inductor electrode and said second region of said pn junction layer is divided into a plurality of segments, and each divided segment is respectively connected electrically.

### Claim 34 (depends on 31)

An LC element according to claim 31 wherein:
the capacitance of said pn junction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 35 (depends on 31)

An LC element according to claim 31 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 36 (depends on 31)

An LC element according to claim 31 formed in a unitized manner as a portion of substrate wherein:
at least one of said inductor electrode and the second region of said pn junction layer is inserted into one of a signal line and a power supply line.

### Claim 37

An LC element comprising:
an inductor electrode having a meander shape formed on a surface of a semiconductor substrate, and
a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region, and functions as a capacitor when used in the reverse bias state,
said first region is directly connected to said inductor electrode,
said inductor electrode and said second region respectively comprise inductors,
a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of the pn junction layer, and
a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
said ground electrode is connected to at least one of a fixed potential power supply and a ground.

### Claim 38 (depends on 37)

An LC element according to claim 37 wherein:
at least said second region of said pn junction layer is formed different in length than said inductor electrode, thereby producing partial correspondence between said inductor electrode and said second region of the pn junction layer.

### Claim 39 (depends on 37)

An LC element according to claim 37 wherein:
at least one of said inductor electrode and said second region of said pn junction layer is divided into a plurality of segments, and each divided segment is respectively connected electrically.

### Claim 40 (depends on 37)

An LC element according to claim 37 wherein:
the capacitance of said pn junction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 41 (depends on 37)

An LC element according to claim 37 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 42 (depends on 37)

An LC element according to claim 37 formed in a unitized manner as a portion of substrate wherein:
at least one of said inductor electrode and the second region of said pn junction layer is inserted into one of a signal line and a power supply line.

### Claim 43

An LC element comprising:
an inductor electrode having a curved line shape formed on a surface of a semiconductor substrate, and
a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region, and functions as a capacitor when used in the reverse bias state,
said first region is directly connected to said inductor electrode,
said inductor electrode and said second region respectively comprise inductors,
a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of the pn junction layer, and
a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
said ground electrode is connected to at least one of a fixed potential power supply and a ground.

### Claim 44 (depends on 43)

An LC element according to claim 43 wherein:
the capacitance of said pn junction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 45

An LC element comprising:
an inductor electrode having a straight line shape formed on a surface of a semiconductor substrate, and
a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region, and functions as a capacitor when used in the reverse bias state,
said first region is directly connected to said inductor electrode,
said inductor electrode and said second region respectively comprise inductors,
a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of the pn junction layer, and
a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
said ground electrode is connected to at least one of a fixed potential power supply and a ground.

### Claim 46 (depends on 45)

An LC element according to claim 45 wherein:
the capacitance of said pn unction layer is changed by changing the reverse bias voltage applied to said pn junction layer.

### Claim 47

An LC element manufacturing method comprising the steps of:
a first process whereby a spiral shaped pn junction layer comprising a first region and a second region inverted with respect thereof is formed in a semiconductor substrate, the second region in direct contact with the substrate and lying between the substrate and the first region,
a second process whereby an inductor electrode is formed electrically connected over the entire length of said first region on the surface of said pn junction layer and the second region is not directly connected along its length to the inductor electrode, and
a third process whereby a wiring layer is formed respectively connected only to at least one end of said inductor electrode and second region of said pn junction layer.

### Claim 48

A method of making an LC element, comprising:
forming an inductor electrode on a surface of a semiconductor substrate;
forming a pn junction layer in a portion of the semiconductor substrate and along the inductor electrode;
forming one of a first p region and a first n region in the pn junction layer;
forming a second inverted region with respect to the first region in direct contact with the substrate and lying between the first region and the substrate; and
forming a connection between the first region and the inductor electrode, wherein
the second inverted region is not directly connected along its length to said inductor electrode.

### Claim 49 (depends on 48)

The method of claim 48, further comprising:
providing first and second electrodes near respective ends of one of the inductor electrode and the second region of the pn junction layer;
providing a ground electrode near only one end of the other of the inductor electrode and the second region of the pn junction layer;
connecting at least one of a fixed potential power supply and a ground to the ground electrode;
forming an insulation film on the entire surface of the semiconductor substrate;
opening perforations in portions of the insulation film by one of etching and laser light emission; and
closing the perforations by applying solder to the extent of protruding slightly from the surface.

### Claim 50 (depends on 48)

The method of claim 48, further comprising:
forming the inductor electrode in a spiral shape;
providing first and second electrodes near respective ends of one of the inductor electrode and the second region of the pn junction layer;
providing a ground electrode near only one end of the other of the inductor electrode and the second region of the pn junction layer;
connecting at least one of a fixed potential power supply and a ground to the ground electrode;
forming an insulation film on the entire surface of the semiconductor substrate;
opening perforations in portions of the insulation film by one of etching and laser light emission; and
closing the perforations by applying solder to the extent of protruding slightly from the surface.

### Claim 51 (depends on 48)

The method of claim 48, further comprising:
forming the inductor electrode in a meander shape;
providing first and second electrodes near respective ends of one of the inductor electrode and the second region of the pn junction layer;
providing a ground electrode near only one end of the other of the inductor electrode and the second region of the pn junction layer;
connecting at least one of a fixed potential power supply and a ground to the ground electrode;
forming an insulation film on the entire surface of the semiconductor substrate;
opening perforations in portions of the insulation film by one of etching and laser light emission; and
closing the perforations by applying solder to the extent of protruding slightly from the surface.

### Claim 52 (depends on 48)

The method of claim 48, further comprising:
providing first and second electrodes near respective ends of one of the inductor electrode and the second region of the pn junction layer;
providing third and fourth electrodes near respective ends of the other one of the inductor electrode and the second region of the pn junction layer;
forming an insulation film on the entire surface of the semiconductor substrate;
opening perforations in portions of the insulation film by one of etching and laser light emission; and
closing the perforations by applying solder to the extent of protruding slightly from the surface.

### Claim 53 (depends on 48)

The method of claim 48, further comprising:
forming the inductor electrode in a spiral shape;
providing first and second electrodes near respective ends of one of the inductor electrode and the second region of the pn junction layer;
providing third and fourth electrodes near respective ends of the other one of the inductor electrode and the second region of the pn junction layer;
forming an insulation film on the entire surface of the semiconductor substrate;
opening perforations in portions of the insulation film by one of etching and laser light emission; and
closing the perforations by applying solder to the extent of protruding slightly from the surface.

### Claim 54 (depends on 48)

The method of claim 48, further comprising:
forming the inductor electrode in a meander shape;
providing first and second electrodes near respective ends of one of the inductor electrode and the second region of the pn junction layer;
providing third and fourth electrodes near respective ends of the other one of the inductor electrode and the second region of the pn junction layer;
forming an insulation film on the entire surface of the semiconductor substrate;
opening perforations in portions of the insulation film by one of etching and laser light emission; and
closing the perforations by applying solder to the extent of protruding slightly from the surface.

### Claim 55

A method of making an LC element, comprising:
forming a pn junction layer in a portion of a semiconductor substrate;
forming one of a first p region and a first n region in the pn junction layer;
forming a second inverted region with respect to the first region;
providing first and second electrodes near respective ends of one of the first region and the second region of the pn junction layer, wherein the second region is not electrically connected along its entire length to an inductor electrode;
providing a ground electrode near only one end of the other of the first region and the second region of the pn junction layer;
connecting at least one of a fixed potential power supply and a ground to the ground electrode;
forming an insulation film on the entire surface of the semiconductor substrate;
opening perforations in portions of the insulation film by one of etching and laser light emission; and
closing the perforations by applying solder to the extent of protruding slightly from the surface.

### Claim 56 (depends on 55)

The method of claim 55, further comprising:
forming the pn junction layer in a spiral shape.

### Claim 57 (depends on 55)

The method of claim 55, further comprising:
forming the pn junction layer in a meander shape.

### Claim 58

An LC element formed in a portion of a semiconductor substrate comprising:
a pn junction layer having a predetermined shape and functioning as a capacitor when used in a reverse bias state, said pn junction layer including a first region and a second region inverted with respect to the first region,
first and second input/output electrodes provided near the respective ends of one of the first region and the second region comprising said pn junction layer, and
a ground electrode provided near only one end of the other one of the first and second regions comprising said pn junction layer, wherein;
inductors are respectively comprised by the first and second regions,
a distributed constant type capacitor is formed by the pn junction layer,
at least one of the first and second regions is used as a signal transmission line,
a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
said ground electrode is connected to at least one of a fixed potential power supply and a ground.

### Claim 59 (depends on 58)

An LC element according to claim 58 wherein:
the pn junction layer has a spiral shape.

### Claim 60 (depends on 59)

An LC element according to claim 59 wherein:
said second region is set different in length than said first region, thereby producing partial correspondence between the first and second regions.

### Claim 61 (depends on 59)

An LC element according to claim 59 wherein:
one of said first region and said second region is divided into a plurality of segments, and
each divided segment is respectively connected electrically.

### Claim 62 (depends on 59)

An LC element according to claim 59 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer can be changed.

### Claim 63 (depends on 59)

An LC element according to claim 59 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 64 (depends on 59)

An LC element according to claim 59 formed in a unitized manner as a portion of substrate wherein:
at least one of the first and second regions of said pn junction layer is inserted into a signal line or power supply line.

### Claim 65 (depends on 58)

An LC element according to claim 58 formed in a unitized manner as a portion of substrate wherein:
at least one of the first and second regions of said pn junction layer is inserted into a signal line or power supply line.

### Claim 66 (depends on 58)

An LC element according to claim 58 wherein:
the pn junction layer has a curved line shape.

### Claim 67 (depends on 66)

An LC element according to claim 66 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer is changed.

### Claim 68 (depends on 58)

An LC element according to claim 58 wherein:
said second region is set different in length than said first region, thereby producing partial correspondence between the first and second regions.

### Claim 69 (depends on 58)

An LC element according to claim 58 wherein:
the pn junction layer has a meander shape.

### Claim 70 (depends on 69)

An LC element according to claim 69 wherein:
said second region is set different in length than said first region, thereby producing partial correspondence between the first and second regions.

### Claim 71 (depends on 69)

An LC element according to claim 69 wherein:
one of said first region and said second region is divided into a plurality of segments, and
each divided segment is respectively connected electrically.

### Claim 72 (depends on 69)

An LC element according to claim 69 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer is changed.

### Claim 73 (depends on 69)

An LC element according to claim 69 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 74 (depends on 69)

An LC element according to claim 69 formed in a unitized manner as a portion of substrate wherein:
at least one of the first and second regions of said pn junction layer is inserted into a signal line or power supply line.

### Claim 75 (depends on 58)

An LC element according to claim 58 wherein:
the pn junction layer has a straight line shape.

### Claim 76 (depends on 75)

An LC element according to claim 75 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer is changed.

### Claim 77 (depends on 58)

An LC element according to claim 58 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer is changed.

### Claim 78 (depends on 58)

An LC element according to claim 58 wherein:
one of said first region and said second region is divided into a plurality of segments, and
each divided segment is respectively connected electrically.

### Claim 79 (depends on 58)

An LC element according to claim 58 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 80

An LC element formed in a portion of a semiconductor substrate comprising:
a pn junction layer having a predetermined shape and functioning as a capacitor when used in a reverse bias state, said pn junction layer including a first region and a second region inverted with respect to the first region,
first and second electrodes provided only near respective ends of one of the first region and the second region comprising said pn junction layer, and
third and fourth electrodes provided only near respective ends of the other one of the first and second regions comprising said pn junction layer, wherein;
inductors are respectively comprised by the first and second regions,
a distributed constant type capacitor is formed by the pn junction layer,
the first and second regions of said pn junction layer respectively function as signal transmission lines, thereby enabling use as a common mode type element.

### Claim 81 (depends on 80)

An LC element according to claim 80 wherein:
said second region is set different in length than said first region, thereby producing partial correspondence between the first and second regions.

### Claim 82 (depends on 80)

An LC element according to claim 80 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer is changed.

### Claim 83 (depends on 80)

An LC element according to claim 80, wherein;
the pn junction layer has a meander shape.

### Claim 84 (depends on 83)

An LC element according to claim 83 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer is changed.

### Claim 85 (depends on 83)

An LC element according to claim 83 wherein:
said second region is set different in length than said first region, thereby producing partial correspondence between the first and second regions.

### Claim 86 (depends on 83)

An LC element according to claim 83 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 87 (depends on 83)

An LC element according to claim 83 formed in a unitized manner as a portion of substrate wherein:
at least one of the first and second regions of said pn junction layer is inserted into a signal line or power supply line.

### Claim 88 (depends on 80)

An LC element according to claim 80 wherein:
the pn junction layer has a spiral shade.

### Claim 89 (depends on 88)

An LC element according to claim 88 wherein:
said second region is set different in length than said first region, thereby producing partial correspondence between the first and second regions.

### Claim 90 (depends on 88)

An LC element according to claim 88 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer is changed.

### Claim 91 (depends on 88)

An LC element according to claim 88 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 92 (depends on 88)

An LC element according to claim 88 formed in a unitized manner as a portion of substrate wherein:
at least one of the first and second regions of said pn junction layer is inserted into a signal line or power supply line.

### Claim 93 (depends on 80)

An LC element according to claim 80 further comprising:
a buffer connected to the output side of said signal transmission line.

### Claim 94 (depends on 80)

An LC element according to claim 80 formed in a unitized manner as a portion of substrate wherein:
at least one of the first and second regions of said pn junction layer is inserted into a signal line or power supply line.

### Claim 95 (depends on 80)

An LC element according to claim 80 wherein;
the pn junction layer has a curved line shade.

### Claim 96 (depends on 95)

An LC element according to claim 95 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer is changed.

### Claim 97 (depends on 80)

An LC element according to claim 80 wherein;
the pn junction layer has a straight line shape.

### Claim 98 (depends on 97)

An LC element according to claim 97 wherein:
by changing the reverse bias applied to said pn junction layer, the capacitance of said pn junction layer is changed.

### Claim 99

An LC element manufacturing method comprising the steps of:
a first process whereby a meander shaped pn junction layer comprising a first region and a second region inverted with respect thereof is formed in a semiconductor substrate, the second region in direct contact with the substrate and lying between the substrate and the first region,
a second process whereby an inductor electrode is formed electrically connected over the entire length of said first region on the surface of said pn junction layer and the second region is not directly connected along its length to the inductor electrode, and
a third process whereby a wiring layer is formed respectively connected only to at least one end of said inductor electrode and second region of said pn junction layer.

### Claim 100

A method of making an LC element, comprising:
forming a pn junction layer in a portion of a semiconductor substrate;
forming one of a first p region and a first n region in the pn junction layer;
forming a second inverted region with respect to the first region;
providing first and second electrodes near respective ends of one of the first region and the second region of the pn junction layer;
providing third and fourth electrodes near respective ends of the other one of the first region and the second region of the pn junction layer, wherein the second region is not electrically connected along its entire length to an inductor electrode;
forming an insulation film on the entire surface of the semiconductor substrate;
opening perforations in portions of the insulation film by one of etching and laser light emission; and
closing the perforations by applying solder to the extent of protruding slightly from the surface.

### Claim 101 (depends on 100)

The method of claim 100, further comprising:
forming the pn junction layer in a spiral shape.

### Claim 102 (depends on 100)

The method of claim 100, further comprising:
forming the pn junction layer in a meander shape.