# US 5,705,849 A · Antifuse structure and method for manufacturing it

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- Number: US 5,705,849 A
- Document ID: US5705849A
- Status: Granted
- Kind: A
- Application number: 08/735,060
- Filed: 1996-10-18
- Granted: 1998-01-06
- Earliest claimed: 1996-04-08
- Assignees: Chartered Semiconductor Manufacturing Pte Ltd.
- Inventors: Jiazhen Zheng; Lap Chan
- Web page: https://patentgrep.com/patent/US5705849A

## CPC

- H10W 20/491: {Antifuses, i.e. interconnections changeable from non-conductive to conductive}
- H10W 20/065: {by making at least a portion of the conductive part non-conductive, e.g. by oxidation}
- H10W 20/084: {for dual-damascene structures}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An improved antifuse design has been achieved by providing a structure comprising pair of alternating layers of silicon nitride and amorphous silicon sandwiched between two dual damascene connectors. Said structure provides the advantage, over the prior art, that all electrically active surfaces of the fuse structure are planar, so no potential failure spots resulting from surface unevenness can be formed. A process for manufacturing said fuse structure is also provided and involves fewer masking steps than related structures of the prior art.

## Claims

### Claim 1

An antifuse structure comprising:
a first conductive layer;
a first insulating layer, having an upper and a lower surface, said lower surface being in contact with said first conductive layer;
a first dual damascene connector in the first insulating layer extending from the upper surface of said first insulating layer to said first conductive layer;
a first layer of silicon nitride on, and overlapping, said first dual damascene connector;
a first layer of amorphous silicon on said first layer of silicon nitride;
a second layer of silicon nitride on said first layer of amorphous silicon;
a second layer of amorphous silicon on said second layer of silicon nitride;
a second insulating layer, having an upper and a lower surface, on the upper surface of the first insulating layer and on said second layer of amorphous silicon; and
a second dual damascene connector in the second insulating layer extending from the upper surface of said second insulating layer to said second layer of amorphous silicon.

### Claim 2 (depends on 1)

The structure of claim 1 wherein the thickness of the first insulating layer is between about 0.6 and 1.5 microns.

### Claim 3 (depends on 1)

The structure of claim 1 wherein the thickness of the second insulating layer is between about 0.6 and 1.5 microns.

### Claim 4 (depends on 1)

The structure of claim 1 wherein said first and second dual damascene connectors comprise material taken from the group consisting of aluminum, copper, tungsten, and silver and are encased in a barrier layer of titanium nitride or titanium tungsten or tantalum nitride or tungsten nitride.

### Claim 5 (depends on 1)

The structure of claim 1 wherein said first and second dual damascene connectors each further comprises a trench part, whose thickness is between about 4,000 and 8,000 Angstroms, and a stud part.

### Claim 6 (depends on 5)

The structure of claim 5 wherein said stud part has a cylindrical shape and a diameter between about 0.18 and 1 microns.

### Claim 7 (depends on 1)

The structure of claim 1 wherein the thickness of said first layer of silicon nitride is between about 50 and 200 Angstroms.

### Claim 8 (depends on 1)

The structure of claim 1 wherein the thickness of said second layer of silicon nitride is between about 50 and 200 Angstroms.

### Claim 9 (depends on 1)

The structure of claim 1 wherein the thickness of said first layer of amorphous silicon is between about 200 and 1,200 Angstroms.

### Claim 10 (depends on 1)

The structure of claim 1 wherein the thickness of said second layer of amorphous silicon is between about 100 and 500 Angstroms.

### Claim 11 (depends on 1)

The structure of claim 1 further comprising a process control layer between said first and second insulating layers.

### Claim 12 (depends on 11)

The structure of claim 11 wherein said process control layer comprises silicon oxide or tantalum nitride or aluminum oxide.

### Claim 13 (depends on 11)

The structure of claim 11 wherein the thickness of said process control layer is between about 400 and 2,000 Angstroms.