# US 5,705,838 A · Array of bit line over capacitor array of memory cells

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- Number: US 5,705,838 A
- Document ID: US5705838A
- Status: Granted
- Kind: A
- Application number: 08/692,748
- Filed: 1996-08-06
- Granted: 1998-01-06
- Earliest claimed: 1993-02-12
- Assignees: Micron Technology, Inc.
- Inventors: Mark Jost; Charles Dennison
- Web page: https://patentgrep.com/patent/US5705838A

## CPC

- H10B 12/033: {the capacitor extending over the transistor}
- H10B 12/31: {having a storage electrode stacked over the transistor}
- H10D 1/68: Capacitors having no potential barriers
- H10D 1/692: {Electrodes}
- H10D 1/711: {having non-planar surfaces, e.g. formed by texturisation}
- H10W 20/01: {Manufacture or treatment}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10D 1/712: {being rough surfaces, e.g. using hemispherical grains}
- H10D 1/714: {having horizontal extensions}
- H10D 1/716: {having vertical extensions}
- Y10S 148/05: Etch and refill
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A semiconductor memory device includes, a) a semiconductor substrate; b) a field effect transistor gate positioned outwardly of the semiconductor substrate; c) opposing active areas formed within the semiconductor substrate on opposing sides of the gate; d) a capacitor electrically connected with one of the active areas; the capacitor comprising an inner storage node, a capacitor dielectric layer, and an outer cell node; the inner storage node electrically connecting with the one active area, the inner storage node having an upper surface at an elevation; e) a bit line; f) a dielectric insulating layer positioned intermediate the bit line and the other active area; and g) an electrically conductive bit line plug extending through the insulating layer to contact with the other active area and electrically interconnect the bit line with the other active area, the bit line plug being homogeneous in composition between the other active area and the elevation of the inner storage node upper surface. A method of producing such a construction is also disclosed.

## Claims

### Claim 1

A semiconductor memory device comprising:
a semiconductor substrate;
a field effect transistor gate positioned outwardly of the semiconductor substrate;
opposing active areas formed within the semiconductor substrate on opposing sides of the gate;
a capacitor electrically connected with one of the active areas; the capacitor comprising an inner storage node, a capacitor dielectric layer, and an outer cell node; the inner storage node electrically connecting with the one active area, the inner storage node having a generally planar uppermost surface which defines an elevation;
a bit line;
a dielectric insulating layer positioned intermediate the bit line and the other active area; and
an electrically conductive bit line plug extending through the insulating layer to contact with the other active area and electrically interconnect the bit line with the other active area, the bit line plug having are uppermost plug surface below which an entirety of conductive plug material comprising the conductive plug is disposed, the uppermost plug surface being generally planar and substantially coplanar with the inner storage node planar uppermost surface, the plug being homogeneous in composition between the other active area and the elevation of the inner storage node upper surface.

### Claim 2 (depends on 1)

The semiconductor memory device of claim 1 wherein the inner storage node physically contacts the one active area.

### Claim 3 (depends on 1)

The semiconductor memory device of claim 1 wherein the plug homogeneous composition is conductively doped polysilicon.

### Claim 4 (depends on 1)

The semiconductor memory device of claim 1 wherein the inner storage node physically contacts the one active area, and the plug homogeneous composition is conductively doped polysilicon.