# US 5,705,830 A · Static induction transistors

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- Number: US 5,705,830 A
- Document ID: US5705830A
- Status: Granted
- Kind: A
- Application number: 08/708,447
- Filed: 1996-09-05
- Granted: 1998-01-06
- Earliest claimed: 1996-09-05
- Assignees: Northrop Grumman Corporation
- Inventors: Richard R. Siergiej; Anant K. Agarwal; Rowland C. Clarke; Charles D. Brandt
- Web page: https://patentgrep.com/patent/US5705830A

## CPC

- H10D 12/031: {of IGBTs}
- H10D 30/012: {of static induction transistors [SIT], e.g. permeable base transistors [PBT]}
- H10D 30/202: {FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]}
- H10D 62/8325: {Silicon carbide}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A static induction transistor includes a substrate and a drift layer with different doping levels. At least two mesas are formed on the drift layer and a heavily doped region is positioned on a top surface of each of the mesas. A gate contact extends along a bottom of a recess between the mesas and along a side of each of the mesas forming the recess. The gate contact also extends along a portion of the top surface of each of the mesas. In one embodiment of the invention, a notch is formed in the top surface of the mesas between the gate contact and the heavily doped region.

## Claims

### Claim 1

A static induction transistor comprising:
a substrate layer;
a drain contact positioned on a first side of the substrate layer;
a drift layer positioned on a second side of the substrate layer;
the drift layer having at least first and second mesas, each said mesa having a central portion on the top thereof and a shoulder portion on either side of said central portion;
said mesas each having a sidewall defining a recess in the drift layer between adjacent ones of said mesas;
each said mesa including a source region positioned at said central portion of said mesa;
a source contact, contacting said source region of each said mesa;
a gate contact positioned in the recess, the gate contact having a first section extending along a bottom surface of the recess and having second and third sections extending along the sidewalls of the mesas and also along respective said shoulder portions of adjacent ones of said mesas;
said gate contact being in direct contact with said bottom surface, sidewalls and shoulder portions, without the intervention of an oxide layer, to form a Schottky gate contact.

### Claim 2 (depends on 1)

A static induction transistor as recited in claim 1, further comprising:
first and second trenches in the top surface of the first mesa, the first and second trenches being positioned on either side of said central portion of the first mesa; and
first and second trench in the top surface of the second mesa, the first and second trenches being positioned on either side of said central portion of the second mesa.

### Claim 3 (depends on 1)

The static induction transistor of claim 1, wherein:
the first portions of the top surfaces of the mesas are located near the center of the top surfaces of the mesas.

### Claim 4 (depends on 1)

The static induction transistor of claim 1, wherein:
the substrate layer is an n+ doped semiconductor;
the drift layer is an n- doped semiconductor; and
the first and second source regions are n+ doped semiconductors.

### Claim 5 (depends on 1)

The static induction transistor of claim 1, wherein:
the substrate layer, drift layer and source regions are constructed in silicon carbide.

### Claim 6 (depends on 6)

A static induction transistor as recited in claim 6, wherein the silicon carbide comprises one of 3C, 2H, 4H, 6H and 15R polytypes.

### Claim 7 (depends on 1)

The static induction transistor of claim 1, wherein:
the drain contact, the source contacts and the gate contact are constructed of nickel.

### Claim 8 (depends on 1)

The static induction transistor of claim 1, wherein:
the substrate layer comprises gallium nitride.

### Claim 9 (depends on 1)

A static induction transistor as recited in claim 1, wherein the drift layer has a thickness of at least 10 .mu.m.

### Claim 10 (depends on 1)

A static induction transistor as recited in claim 1, wherein:
the substrate layer, drift layer and source regions are constructed in gallium arsenide.

### Claim 11

A recessed Schottky gate type static induction transistor comprising:
a substrate fabricated of a heavily-doped silicon carbide having a selected conductivity type;
a drift layer fabricated of a lightly-doped silicon carbide having the selected conductivity type provided upon the substrate, the drift layer having a plurality of spaced-apart mesas which extend outwardly from the drift layer and define recesses therebetween;
a plurality of source regions constructed of heavily doped silicon carbide having the selective conductivity type, each source region being disposed adjacent to a central portion of a top surface of a respective mesa of the drift layer and defining shoulders on either side of said source regions;
a gate material provided on the drift layer between two adjacent mesas, the gate material further lying adjacent to sidewalls of the mesas forming at least one of the recesses and extending along a portion of said shoulders and being in direct contact with said drift layer at the bottom of said recess, along said sidewalls and along said portion of said shoulders, without the intervention of an oxide layer.

### Claim 12 (depends on 11)

A static induction transistor as recited in claim 11, further comprising:
first and second trenches in the top surface of each of said mesas, the first trench being positioned on one side of said central portion of said mesa; and
the second trench being positioned on the other side of said central portion of said mesa.

### Claim 13 (depends on 11)

The static induction transistor of claim 11, wherein:
the substrate layer is an n+ doped semiconductor;
the drift layer is an n- doped semiconductor; and
the first and second source regions are n+ doped semiconductors.

### Claim 14 (depends on 11)

A static induction transistor as recited in claim 11, wherein the silicon carbide comprises one of 3C, 2H, 4H, 6H and 15R polytypes.

### Claim 15 (depends on 11)

The static induction transistor of claim 11, wherein:
the drain contact, the source contacts and the gate contact are constructed of nickel.

### Claim 16 (depends on 11)

A static induction transistor as recited in claim 11, wherein the drift layer has a thickness of at least 10 .mu.m.

### Claim 17 (depends on 1)

The static induction transistor of claim 1 wherein:
the substrate layer is a p+ doped semiconductor; the drift layer is a p- doped semiconductor; and the first and second source regions are p+ doped semiconductors.

### Claim 18 (depends on 1)

The static induction transistor of claim 1 wherein the drift layer and source regions are comprised of gallium nitride.

### Claim 19 (depends on 1)

The static induction transistor of claim 1 wherein the gate is comprised of a material selected from the group consisting of molybdenum, gold, nickel, polysilicon or amorphous silicon.