Semiconductor device formed using a catalyst element capable of promoting crystallization

An electro-optical device comprising:

• a substrate having an insulated surface;
• a peripheral circuit region having a first thin film transistor formed over said substrate, wherein said thin film transistor has a crystalline semiconductor film added with a catalyst for promoting a crystallization of said semiconductor film at a first concentration;
• and
• a pixel circuit region having a second thin film transistor formed over said substrate, wherein said thin film transistor has a crystalline semiconductor film added with a catalyst for promoting a crystallization of said semiconductor film at a second concentration which is different from said first concentration.

An active matrix display device comprising:

• a plurality of first thin film transistors arranged in a matrix form and formed on a substrate;
• and
• a driving circuit comprising second thin film transistors formed on said substrate, said driving circuit including at least one of a correction memory, an input-port, a memory and a CPU,
• wherein a channel region in both of said first and second thin film transistors comprises a crystallized semiconductor added with a catalyst element, which is capable of promoting crystallization of silicon.

An active matrix display device comprising:

• a plurality of first thin film transistors arranged in a matrix form and formed on a substrate;
• and
• a driving circuit comprising second thin film transistors formed on said substrate, said driving circuit including at least one of a correction memory, an input-port, a memory and a CPU,
• wherein a channel region in both of said first and second thin film transistors comprises a crystallized semiconductor added with a catalyst element, which is capable of promoting crystallization of silicon, and
• wherein the channel region in the second thin film transistor has a crystalline structure in which crystals extend in a direction parallel with a surface of said substrate.

An active matrix display device comprising:

• a plurality of first thin film transistors arranged in a matrix form and formed on a substrate;
• and
• a driving circuit comprising second thin film transistors formed on said substrate, said driving circuit including at least one of a correction memory, an input-port, a memory and a CPU,
• wherein a channel region in both of said first and second thin film transistors comprises a crystallized semiconductor added with a catalyst element, which is capable of promoting crystallization of silicon, and
• wherein the channel region in the second thin film transistor has a crystalline structure in which crystals extend in a direction perpendicular to a surface of said substrate.