# US 5,705,828 A · Photovoltaic device

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- Number: US 5,705,828 A
- Document ID: US5705828A
- Status: Granted
- Kind: A
- Application number: 08/544,956
- Filed: 1996-02-20
- Granted: 1998-01-06
- Earliest claimed: 1991-08-10
- Assignees: Sanyo Electric Co., Ltd.
- Inventors: Shigeru Noguchi; Hiroshi Iwata; Keiichi Sano
- Web page: https://patentgrep.com/patent/US5705828A

## CPC

- H10F 10/161: comprising multiple PN heterojunctions, e.g. tandem cells
- H10F 10/166: the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
- H10F 71/103: {including only Group IV materials}
- Y02E 10/50: Photovoltaic [PV] energy
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

The disclosure relates to a photovoltaic device comprising a transparent electrode, one conductive type amorphous semiconductor, another conductive type crystal semiconductor, an intrinsic amorphous semiconductor, another conductive type amorphous semiconductor and a metal electrode and having a first semiconductor junction composed of the one conductive type amorphous semiconductor and the another conductive type crystal semiconductor, and a second semiconductor junction composed of the another type crystal semiconductor and the another conductive type amorphous semiconductor, wherein the transparent electrode is located on light incident side of the one conductive type amorphous semiconductor, the metal electrode is located on another side, the intrinsic amorphous semiconductor is located between the another conductive type crystal semiconductor and the another conductive type amorphous semiconductor, the first semiconductor junction is located on the light incident side, and the second semiconductor junction is located on the another side. In the device, the crystal semiconductor is composed single-crystalline semiconductor or polycrystalline semiconductor.

## Claims

### Claim 1

A photovoltaic device having a multilayer semiconductor structure which includes an n-i-n or p-i-p portion, said device comprising:
a transparent electrode, a back electrode and a plurality of semiconductor layers between said transparent electrode and said back electrode,
wherein said plurality of semiconductor layers include:
a first amorphous semiconductor layer of a first conductivity type disposed adjacent said transparent electrode;
a crystalline semiconductor layer disposed for absorbing light which passes through said transparent electrode and said first semiconductor layer, said crystalline semiconductor layer having a second conductivity type which is opposite to said first conductivity type;
a first intrinsic amorphous semiconductor layer contacting, and forming an interface with, said crystalline semiconductor layer; and
a second amorphous semiconductor layer of said second conductivity type contacting, and forming an interface with, said first intrinsic amorphous semiconductor layer at a location such that said first intrinsic amorphous semiconductor layer is sandwiched between said crystalline semiconductor layer and said second amorphous semiconductor layer,
said second amorphous semiconductor layer being operatively associated with said back electrode for conducting photocurrent from said crystalline semiconductor layer to said back electrode.

### Claim 2 (depends on 1)

A photovoltaic device as defined in claim 1 wherein said plurality of semiconductor layers further include a second intrinsic amorphous semiconductor layer disposed between said first amorphous semiconductor layer and said crystalline semiconductor layer.

### Claim 3 (depends on 1)

A photovoltaic device as defined in claim 1 wherein said crystalline semiconductor layer has a surface which faces said first amorphous semiconductor layer and which is uneven.

### Claim 4 (depends on 1)

A photovoltaic device as defined in claim 1 wherein said crystalline semiconductor is selected from the group of single-crystalline semiconductor and polycrystalline semiconductor.

### Claim 5 (depends on 1)

A photovoltaic device as defined in claim 1 wherein said intrinsic amorphous semiconductor layer has a hydrogen content in a range from 7 atm % to 29 atom %.

### Claim 6 (depends on 1)

A photovoltaic device as defined in claim 1 wherein said intrinsic amorphous semiconductor layer has a thickness of in the range from 20 .ANG. to 400 .ANG..

### Claim 7

A photovoltaic device comprising:
a transparent front electrode;
a first amorphous semiconductor layer of a first conductivity type laminated to said front electrode;
a crystalline semiconductor layer of a second conductivity type laminated to said first amorphous semiconductor layer and disposed for absorbing light which passes through said transparent electrode and said first semiconductor layer;
a second amorphous semiconductor layer of a second conductivity type which is opposite to said first conductivity type, laminated to said crystalline semiconductor layer; and
a back electrode laminated to said second amorphous semiconductor layer,
wherein said second amorphous semiconductor layer is operatively associated with said back electrode for conducting photocurrent from said crystalline semiconductor layer to said back electrode.

### Claim 8 (depends on 7)

A photovoltaic device as defined in claim 7 wherein said crystalline semiconductor layer has a surface which faces said first amorphous semiconductor layer and which is uneven.

### Claim 9 (depends on 7)

A photovoltaic device as defined in claim 7 wherein said crystalline semiconductor layer is made of a single-crystalline semiconductor material .