# US 5,705,440 A · Methods of fabricating integrated circuit field effect transistors having reduced-area device isolation regions

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- Number: US 5,705,440 A
- Document ID: US5705440A
- Status: Granted
- Kind: A
- Application number: 08/681,875
- Filed: 1996-07-29
- Granted: 1998-01-06
- Earliest claimed: 1995-09-13
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Byung-hyug Roh; Ki-nam Kim
- Web page: https://patentgrep.com/patent/US5705440A

## CPC

- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 30/608: {having non-planar bodies, e.g. having recessed gate electrodes}
- H10D 62/021: {Forming source or drain recesses by etching e.g. recessing by etching and then refilling}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A integrated circuit field effect transistor is formed with device isolation regions disposed on opposite sides of the transistor, each of which include a shallow insulation-filled trench region which abuts an insulating region underlying an active region of the transistor. A pair of spaced apart insulation-filled trench regions are formed in a semiconductor substrate at a surface of the substrate. An insulated gate is formed on the substrate between and separated from the insulation-filled trench regions. Spaced apart source and drain insulating regions are formed in the substrate, a respective one of which is disposed between the insulated gate and a respective one of the insulation-filled trench regions. Corresponding spaced apart source and drain regions are then formed on the spaced apart source and drain insulating regions. The insulated gate is formed overlying a channel region disposed between lightly doped source and drain regions.

## Claims

### Claim 1

A method of fabricating an integrated circuit field effect transistor, the method comprising the steps of:
forming a pair of spaced apart insulation-filled trench regions in a semiconductor substrate at a surface of the substrate;
forming an insulated gate on the substrate between and separated from a respective one of the insulation-filled trench regions by a respective exposed portion of the semiconductor substrate;
forming spaced apart insulating regions in the substrate, a respective one of which is disposed between the insulated gate and a respective one of the insulation-filled filled trench regions, wherein said step of forming spaced apart insulating regions comprises the steps of:
forming barrier regions adjacent sidewall portions of the insulated gate and the insulation-filled trench regions; and
oxidizing exposed portions of the semiconductor substrate between the barrier regions to form a source insulating region disposed between the insulated gate and one of the insulation-filled trench regions and a drain insulating region disposed between the insulated gate and a second of the insulation-filled trench regions; and
forming corresponding spaced apart source and drain regions on the spaced apart insulating regions.

### Claim 2 (depends on 1)

A method according to claim 1 wherein said step of forming a pair of spaced apart insulation-filled trench regions comprises the steps of:
etching a pair of trenches in the surface of the semiconductor substrate;
forming an insulation layer on the substrate; and
removing portions of the insulation layer to expose surface portions of the semiconductor substrate disposed between the trenches and create a pair of insulation-filled trench regions.

### Claim 3

A method of fabricating an integrated circuit field effect transistor, the method comprising the steps of:
forming a pair of spaced apart insulation-filled trench regions in a semiconductor substrate at a surface of the substrate;
forming an insulated gate on the substrate between and separated from the insulation-filled trench regions, wherein said step of forming an insulated gate comprises the steps of:
forming a first insulation layer on the substrate between the insulation-filled trench regions;
forming a conductive layer on the first insulation layer;
forming a second insulation layer on the conductive layer;
removing portions of the second insulation layer and the conductive layer to form a gate protector, formed from the second insulation layer, overlying a gate electrode formed from the conductive layer and laterally separated from the insulation-filled trench regions by exposed portions of the first insulation layer;
implanting ions into portions of the semiconductor substrate underlying the exposed portions of the first insulation layer to form a pair of lightly-doped impurity regions, a respective one of which is laterally disposed between a channel region and a respective one of the insulation-filled trench regions, underlying the gate electrode;
forming a masking layer on the substrate;
anisotropically removing portions of the masking layer to expose the gate protector and portions of the first insulation layer laterally disposed between the gate electrode and the insulation-filled trench regions and leave masking regions disposed adjacent sidewall portions of the gate electrode and the gate protector; and
removing portions of the first insulation layer and the lightly doped impurity regions disposed between the masking regions and the insulation-filled trench regions to form an insulated gate, including the gate electrode and a gate insulator formed from the first insulation region, overlying the channel region and a pair of lightly-doped source and drain regions disposed adjacent to and on opposite sides of the channel region, and to expose sidewall portions of the insulation-filled trench regions;
forming spaced apart insulating regions in the substrate, a respective one of which is disposed between the insulated gate and a respective one of the insulation-filled trench regions; and
forming corresponding spaced apart source and drain regions on the spaced apart insulating regions.

### Claim 4 (depends on 3)

A method according to claim 3 wherein the conductive layer comprises one of doped polysilicon or tungsten polycide, and wherein the second insulation layer comprises silicon nitride.

### Claim 5 (depends on 3)

A method according to claim 3 wherein said step of forming spaced apart insulating regions comprises the step of:
forming barrier regions adjacent sidewall portions of the masking regions, the gate insulator, the lightly-doped source and drain regions, and the insulation-filled trench regions; and
oxidizing exposed portions of the semiconductor substrate between the barrier regions to form an insulating region disposed between the lightly doped source region and one of the insulation-filled trench regions and an insulating region disposed between the lightly doped drain region and a second of the insulation-filled trench regions.

### Claim 6 (depends on 5)

A method according to claim 5 wherein the barrier regions comprise silicon nitride.

### Claim 7 (depends on 5)

A method according to claim 5 wherein said step of forming barrier regions comprises the steps of:
forming a barrier layer on the substrate; and
anisotropically etching the barrier layer to leave barrier regions disposed adjacent sidewall portions of the masking regions, the gate insulator, the lightly-doped source and drain regions and the insulation-filled trench regions.

### Claim 8 (depends on 7)

A method according to claim 7 wherein the barrier layer and the barrier regions comprise silicon nitride.

### Claim 9 (depends on 5)

A method according to claim 5 wherein said step of forming spaced apart source and drain regions comprises the steps of:
removing the barrier regions to expose sidewall portions of the lightly-doped source and drain regions;
forming a polysilicon layer on the substrate;
forming a masking material layer on the polysilicon layer;
removing portions of the masking material layer to expose portions of the polysilicon layer overlying the insulated gate and the insulation-filled trench regions and to leave spaced apart masking material regions overlying the spaced apart insulating regions;
removing exposed portions of the polysilicon layer overlying the insulated gate and the insulation-filled trench regions to expose the gate protector and the insulation-filled trench regions;
removing the masking material regions to expose spaced apart polysilicon regions overlying the spaced apart insulating regions; and
implanting ions into the spaced apart polysilicon regions to form spaced apart source and drain regions overlying the spaced apart insulating regions.

### Claim 10 (depends on 9)

A method according to claim 9 wherein the masking material layer comprises one of photoresist, spin-on glass, and borophosphosilicate glass.

### Claim 11

A method for forming device isolation regions for separating adjacent integrated circuit field effect transistors in a semiconductor substrate, the method comprising the steps of:
forming an insulation-filled trench region in the substrate;
forming an insulated gate for each of the adjacent transistors on the semiconductor substrate, a respective one of which is spaced apart from and on opposite sides of the insulation-filled trench region
forming insulating regions in the substrate between the insulated gates of the adjacent transistors and the insulation-filled trench region, wherein said step of forming insulating regions in the substrate comprises the steps of:
forming barrier regions adjacent sidewall portions of the insulated gates and the insulation-filled trench region; and
oxidizing exposed portions of the semiconductor substrate disposed between the barrier regions to produce spaced apart insulating regions, a respective one of which is disposed between the insulation-filled trench region and a respective one of the insulated gates; and
forming active regions on the insulating regions.

### Claim 12

A method for forming device isolation regions for separating adjacent integrated circuit field effect transistors in a semiconductor substrate, the method comprising the steps of:
forming an insulation-filled trench region in the substrate;
forming an insulated gate for each of the adjacent transistors on the semiconductor substrate, a respective one of which is spaced apart from and on opposite sides of the insulation-filled trench region;
forming insulating regions in the substrate between the insulated gates of the adjacent transistors and the insulation-filled trench region;
forming a polysilicon layer overlying the substrate;
forming a masking material layer on the polysilicon layer;
removing portions of the masking material layer to expose portions of the polysilicon layer overlying the insulated gates and the insulation-filled trench region and to leave masking material regions overlying the insulating regions;
removing the exposed portions of the polysilicon layer overlying the insulated gates and the insulation-filled trench region to expose the insulated gates and the insulation-filled trench region;
removing the masking material layer to expose regions of the polysilicon layer overlying the insulating regions; and
implanting ions into the exposed regions overlying the insulating regions to form active regions overlying the insulating regions.

### Claim 13

A method of fabricating an integrated circuit field effect transistor, the method comprising the steps of:
etching a pair of trenches in a surface of a semiconductor substrate;
forming an insulation layer on the substrate;
removing portions of the insulation layer to expose surface portions of the semiconductor substrate disposed between the trenches and create a pair of insulation-filled trench regions;
forming a first insulation layer on the substrate between the insulation-filled trench regions;
forming a conductive layer on the first insulation layer;
forming a second insulation layer on the conductive layer;
removing portions of the second insulation layer and the conductive layer to form a gate protector, formed from the second insulation layer, overlying a gate electrode formed from the conductive layer and laterally separated from the insulation-filled trench regions by exposed portions of the first insulation layer;
implanting ions into portions of the semiconductor substrate underlying the exposed portions of the first insulation layer to form a pair of lightly-doped impurity regions, a respective one of which is laterally disposed between the channel region and a respective one of the insulation-filled trench regions;
forming a masking layer on the substrate;
anisotropically removing portions of the masking layer to expose the gate protector and portions of the first insulation layer laterally disposed between the gate electrode and the insulation-filled trench regions and leave masking regions disposed adjacent sidewall portions of the gate electrode and the gate protector;
removing portions of the first insulation layer and the lightly doped impurity regions disposed between the masking regions and the insulation-filled trench regions to form an insulated gate, including the gate electrode and a gate insulator formed from the first insulation layer, overlying a channel region and a pair of lightly-doped source and drain regions disposed adjacent to and on opposite sides of the channel region, and to expose sidewall portions of the insulation-filled trench regions;
forming a barrier layer on the substrate;
anisotropically etching the barrier layer to leave barrier regions disposed adjacent sidewall portions of the masking regions, the gate insulator, the lightly-doped source and drain regions and the insulation-filled trench regions;
oxidizing exposed portions of the semiconductor substrate between the barrier regions to form an insulating region disposed between the lightly doped source region and one of the insulation-filled trench regions and an insulating region disposed between the lightly doped drain region and a second of the insulation-filled trench regions;
removing the barrier regions to expose sidewall portions of the lightly doped source and drain regions;
forming a polysilicon layer on the substrate;
forming a masking material layer on the polysilicon layer;
removing portions of the masking material layer to expose portions of the polysilicon layer overlying the insulated gate and the insulation-filled trench regions and to leave spaced apart masking material regions overlying the spaced apart insulating regions;
removing exposed portions of the polysilicon layer overlying the insulated gate and the insulation-filled trench regions to expose the insulated gate and the insulation-filled trench regions;
removing the masking material layer to expose spaced apart polysilicon regions overlying the spaced apart insulating regions; and
implanting ions into the spaced apart polysilicon regions to form spaced apart source and drain regions overlying the spaced apart insulating regions.