# US 5,705,410 A · Method of producing a semi-conductor with a highly doped zone situated between lightly doped zones, for the manufacture of transistors

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- Number: US 5,705,410 A
- Document ID: US5705410A
- Status: Granted
- Kind: A
- Application number: 08/662,793
- Filed: 1996-06-12
- Granted: 1998-01-06
- Earliest claimed: 1995-06-21
- Assignees: Commissariat a l'Energie Atomique
- Inventors: Georges Guegan
- Web page: https://patentgrep.com/patent/US5705410A

## CPC

- H10D 30/0223: {having source and drain regions or source and drain extensions self-aligned to sides of the gate}
- H10D 62/307: {the doping variations being parallel to the channel lengths}
- H10P 30/221: {characterised by the angle between the ion beam and the mask}
- H10P 30/222: {characterised by the angle between the ion beam and the crystal planes or the main crystal surface (characterised by the angle between the ion beam and the mask H10P30/221)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of producing a transistor with a highly doped zone situated between lightly doped zones. This method comprises: a first oblique implant of ions (100) into a first and a second zone (144, 142), a mask (114) being formed at the periphery of a third zone in order to protect the third zone from the ions of the first implant, a second oblique implant of ions (130) into the first and third zones, a mask (115) being formed at the periphery of the second zone (142) in order to protect the second zone (142) from the ions (130) of the second implant, then the formation of a gate of the transistor.

## Claims

### Claim 1

A method of producing a transistor in a semiconductor substrate comprising first, second and third juxtaposed doped zones, including respectively the channel, the source and the drain of the transistor, the first zone being situated between the second and the third zones and having a mean doping concentration greater than that of the second and third zones, characterised in that the method comprises the following steps:
a first oblique implant of ions into the first and the second zones with a first implant angle, a first implant dose and a first implant energy, a mask being formed at the periphery of the third zone outside the first, second and third zones, this mask having sufficient thickness, chosen as a function of the first implant angle, the first dose and the first implant energy to protect the third zone from the ions of the first implant,
a second oblique implant of ions into the first and third zones with a second implant angle, a second implant dose and a second implant energy, a mask being formed at the periphery of the second zone, outside the first, second and third zones, the mask having sufficient thickness, chosen as a function of the second implant angle, the second dose and the second implant energy to protect the second zone from the ions of the second implant,
formation after the first and second implants of a gate oxide layer and a gate above the first zone and formation of a drain and of a source in the second and third zones,
the masks at the periphery of the second and third zones being formed before the first and second implants and wherein the first and second implants are of the same conductivity type.

### Claim 2 (depends on 1)

A method according to claim 1, characterised in that the masks formed at the periphery of the second and third zones, are formed simultaneously.

### Claim 3 (depends on 1)

A method of producing a semi-conductor according to claim 1, characterised in that the first and second implants are carried out through a sacrificial oxide layer formed on the surface of the first, second and third zones.

### Claim 4 (depends on 1)

A method according to claim 1, characterised in that the first and second implant angles have an identical size and an opposite sign, that the first implant dose and the second implant dose are identical, that the first and the second implant energies are identical and that the masks formed at the periphery of the second and third zones have identical thicknesses.

### Claim 5 (depends on 1)

A method according to claim 1, characterised in that the size of the implant angles, the implant doses, the implant energy and the height of the masks are chosen so that during the first and second implants, the zones protected by a mask have respectively a length L.sub.1, and the implanted zones have a length L.sub.2 such that L.sub.2 >L.sub.1, L.sub.1, and L.sub.2 being measured in a direction of charge flow in the transistor.

### Claim 6 (depends on 1)

A method according to claim 1, characterised in that the size of the implant angles, the implant dose, the energy of the implants and the height of the masks are chosen so that the length L.sub.c of the first zone, comprising the transistor channel is greater than the length L.sub.g of a gate of this transistor, the lengths L.sub.c and L.sub.g being measured in a direction of flow of carriers in the transistor.