# US 5,705,407 A · Method of forming high performance bipolar devices with improved wiring options

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 5,705,407 A
- Document ID: US5705407A
- Status: Granted
- Kind: A
- Application number: 08/691,730
- Filed: 1996-08-02
- Granted: 1998-01-06
- Earliest claimed: 1994-11-29
- Assignees: International Business Machines Corporation
- Inventors: James Stuart Dunn; Michael Dean Hulvey; Eric David Johnson; Robert Andrew Kertis; Kenneth Knetch Kieft, III; Albert Edson Lanpher; Nicholas Theodore Schmidt
- Web page: https://patentgrep.com/patent/US5705407A

## CPC

- H10D 10/051: {of vertical BJTs (of heterojunction BJTs H10D10/021; of Schottky BJTs H10D10/031; of thin film BJTs H10D10/041)}
- H10D 64/281: {Base electrodes for bipolar transistors}
- H10W 20/484: {Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes}
- Y10S 148/01: Bipolar transistors-ion implantation
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

High-performance bipolar transistors with improved wiring options and fabrication methods therefore are set forth. The bipolar transistor includes a base contact structure that has multiple contact pads which permit multiple device layouts when wiring to the transistor. For example, a first device layout may comprise a collector-base-emitter device layout, while a second device layout may comprise a collector-emitter-base device layout. More specifically, the base contact structure at least partially surrounds the emitter and has integral contact pads which extend away from the emitter. Further, sections of the base contact structure are disposed on an insulating layer outside of the perimeter of the base region of the transistor, while other sections directly contact the base region. Specific details of the bipolar transistor, and fabrication methods therefore are also set forth.

## Claims

### Claim 1

A method for electrically connecting to a transistor, said transistor having a base region, an emitter region and a collector region, said method comprising the steps of:
(a) providing said transistor with a base contact structure, said base contact structure being electrically connected to said base region of said transistor, and said base contact structure having a plurality of contact regions integral therewith, each contact region of said plurality of contact regions being disposed at a different side of said emitter region;
(b) selecting a first contact region of said plurality of contact regions of said base contact structure; and
(c) forming a metallization layer which electrically attaches to said first contact region of said base contact structure for facilitating electrical connection to said base region of said transistor through said base contact structure.

### Claim 2 (depends on 1)

The method of claim 1, wherein said forming step (c) comprises forming said metallization layer above said base contact structure, said metallization layer being electrically attached to said first contact region of said plurality of said contact regions of said base contact structure and being electrically insulated from each other contact region of said plurality of contact regions of said base contact structure.