# US 5,705,406 A · Method for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation technique

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 5,705,406 A
- Document ID: US5705406A
- Status: Granted
- Kind: A
- Application number: 08/636,969
- Filed: 1996-04-24
- Granted: 1998-01-06
- Earliest claimed: 1996-04-24
- Assignees: ABB Research Ltd.
- Inventors: Kurt Rottner; Adolf Schoner; Nils Nordell
- Web page: https://patentgrep.com/patent/US5705406A

## CPC

- H10D 62/8325: {Silicon carbide}
- H10D 12/031: {of IGBTs}
- H10D 30/051: {of FETs having PN junction gates (H10D30/015 takes precedence)}
- H10D 30/831: {Vertical FETs having PN junction gate electrodes (Vertical SIT H10D30/202)}
- H10P 30/2042: {into crystalline silicon carbide}
- H10P 30/21: {of electrically active species}
- H10W 15/00: Highly-doped buried regions of integrated devices
- H10W 15/01: {Manufacture or treatment}
- Y10S 438/931: Silicon carbide semiconductor
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A method for producing a semiconductor device having semiconductor layers of SiC with at least three doped layers on top of each other, comprises the steps of growing a first semiconductor layer of SiC; implanting an impurity dopant into the first layer to form a second doped surface layer as a sub-layer therein, the second doped surface layer being surrounded, except for the top surface thereof, by the first semiconductor layer; and epitaxially growing a third semiconductor layer of SiC on top of the second layer of SiC and regions of the first layer adjacent thereto to totally bury the second semiconductor layer. The impurity dopant implanted into the first semiconductor layer is of a first conductivity n or p type, and the first semiconductor layer being doped with a second, opposite conductivity type, so as to form a pn-junction at the interface between the first and second layers.

## Claims

### Claim 1

A method for producing a semiconductor device having semiconductor layers of SiC with at least three doped layers on top of each other, comprising the steps of:
a) growing a first semiconductor layer of SiC;
b) implanting an impurity dopant into said first layer to form a second doped surface layer as a sub-layer therein, said second doped surface layer being surrounded, except for the top surface thereof, by said first semiconductor layer; and
c) epitaxially growing a third semiconductor layer of SiC on top of said second layer of SiC and regions of said first layer adjacent thereto to totally bury said second semiconductor layer; and
wherein said impurity dopant implanted into said first semiconductor layer is of a first conductivity n or p type, said first semiconductor layer being doped with a second, opposite conductivity type, so as to form a pn-junction at the interface between said first and second layers.

### Claim 2 (depends on 1)

A method according to claim 1 wherein said growing in step c) is carried out at such a temperature that the dopants implanted in step b) are made electrically active and implantation damage is reduced.

### Claim 3 (depends on 1)

A method according to claim 1 wherein said temperature is higher than 1,500.degree. C.

### Claim 4 (depends on 1)

A method according to claim 1 wherein in step c) said third semiconductor layer is grown by Chemical Vapor Deposition (CVD).

### Claim 5 (depends on 1)

A method according to claim 1 wherein said impurity dopant implanted in step b) is of p-type.

### Claim 6 (depends on 5)

A method according to claim 5, wherein boron is said impurity dopant in step b).

### Claim 7 (depends on 5)

A method according to claim 5, wherein aluminum is said impurity dopant in step b).

### Claim 8 (depends on 6)

A method according to claim 6 wherein the implantation step b) is carried out while keeping the first semiconductor layer of SiC at a temperature of 400.degree.-600.degree. C.

### Claim 9 (depends on 1)

A method according to claim 1 wherein adjacent layers of said three layers are doped with dopants of different n or p conductivity types.

### Claim 10 (depends on 9)

A method according to claim 9 wherein in step c) said third semiconductor layer is grown with a lower doping concentration than the doping concentration of the second semiconductor layer obtained by said implantation.

### Claim 11 (depends on 1)

A method according to claim 1 wherein said first and third layers are epitaxially grown in step a) and step c) while doping said layers with n-type dopants.

### Claim 12 (depends on 11)

A method according to claim 11 wherein said third semiconductor layer is grown in step c) at a lower doping concentration than the dopant concentration of the second semiconductor layer.

### Claim 13 (depends on 1)

A method according to claim 1 further comprising several alternating successive steps of implantation and regrowth according to steps b) and c).

### Claim 14 (depends on 13)

A method according to claim 13 wherein the regrowth of layer is coordinated with the conditions of the implantation step following thereupon to make the layer obtained by that implantation step extending through the entire layer previously regrown and connecting to the layer previously obtained by the previous implantation step for forming a continuous thick implanted layer.

### Claim 15 (depends on 1)

A method according to claim 1 wherein a regrowth step is carried out after the last implantation step to form said thick continuous implanted layer thereby forming a semiconductor device having a thick buried layer.