Cleaning fluid for semiconductor substrate
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsYasuo Sugihara, Kazushige Tanaka, Ikue Sakuma
Life of this patent
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Abstract
An acidic or basic hydrogen peroxide cleaning fluid for cleaning a semiconductor substrate, comprising a phosphonic acid chelating agent and a wetting agent, or comprising a wetting agent alone.
Claims18
An acid or basic hydrogen peroxide cleaning fluid composition for cleaning a semiconductor substrate, comprising
- (a) 0.1 to 30 wt % of a hydrogen peroxide,
- (b) 0.1 to 1 wt % of a base selected from the group consisting of ammonia, hydroxyltrimethylammonium hydroxide and tetramethylammonium hydroxide or an inorganic acid selected from the group consisting of hydrochloric acid, sulfuric acid, hydrofluoric acid and a mixture thereof,
- (c) a wetting agent selected from the group consisting of anionic surfactant, cationic surfactant, nonionic surfactant, fluorinated surfactant and a water-soluble organic additive that can improve the wetness of a cleaning agent on the surface of a substrate, in an amount effective to produce a surface tension of the cleaning fluid of 60 dyne/cm or less, or a contact angle of the cleaning fluid to the surface of a substrate of 50.degree. or less, and
- (d) a phosphonic acid chelating agent in an amount of 1 ppb to 1,000 ppm based on the amount of the cleaning fluid.
An acid or basic hydrogen peroxide cleaning fluid composition for cleaning a semiconductor substrate, which has a surface tension of 60 dyne/cm or less, or a contact angle of 50.degree. or less with respect to a surface of said substrate, comprising
- (a) 0.1 to 30 wt % of a hydrogen peroxide,
- (b) 0.1 to 10 wt % of a base selected from the group consisting of ammonia, hydroxyltrimethylammonium hydroxide and tetramethylammonium hydroxide or an inorganic acid selected from the group consisting of hydrochloric acid, sulfuric acid, hydrofluoric acid and a mixture thereof,
- (c) a wetting agent which is a sulfonic acid surfactant, in an amount of 1 to 15,000 ppm based on the cleaning fluid, and
- (d) a phosphonic acid chelating agent in an amount of 1 ppb to 1,000 ppm based on the amount of the cleaning fluid.
An acid or basic hydrogen peroxide cleaning fluid composition for cleaning a semiconductor substrate, which has a surface tension of 60 dyne/cm or less, or a contact angle of 50.degree. or less with respect to a surface of said substrate, comprising
- (a) 0.1 to 30 wt % of a hydrogen peroxide,
- (b) 0.1 to 10 wt % of a base selected from the group consisting of ammonia, hydroxyltrimethylammonium hydroxide and tetramethylammonium hydroxide or an inorganic acid selected from the group consisting of hydrochloric acid, sulfuric acid, hydrofluoric acid and a mixture thereof,
- (c) a wetting agent which is a ethylene oxide-added nonionic surfactant, in an amount of 1 to 15,000 ppm based on the cleaning fluid, and
- (d) a phosphoric acid chelating agent in an amount of 1 ppb to 1,000 ppm based on the amount of the cleaning fluid.
An acid or basic hydrogen peroxide cleaning fluid composition for cleaning a semiconductor substrate, which has a surface tension of 60 dyne/cm or less, or a contact angle of 50.degree. or less with respect to a surface of said substrate, comprising
- (a) 0.1 to 30 wt % of a hydrogen peroxide,
- (b) 0.1 to 10 wt % of a base selected from the group consisting of ammonia, hydroxyltrimethylammonium hydroxide and tetramethylammonium hydroxide or an inorganic acid selected from the group consisting of hydrochloric acid, sulfuric acid, hydrofluoric acid and a mixture thereof,
- (c) a wetting agent which is a polycarboxylic acid or its copolymerization modified product, in an amount of 1 to 15,000 ppm based on the cleaning fluid, and
- (d) a phosphonic acid chelating agent in an amount of 1 ppb to 1,000 ppm based on the amount of the cleaning fluid.
An acid or basic hydrogen peroxide cleaning fluid composition for cleaning a semiconductor substrate, which has a surface tension of 60 dyne/cm or less, or a contact angle of 50.degree. or less with respect to a surface of said substrate, comprising
- (a) 0.1 to 30 wt % of a hydrogen peroxide,
- (b) 0.1 to 10 wt % of a base selected from the group consisting of ammonia, hydroxyltrimethylammonium hydroxide and tetramethylammonium hydroxide or an inorganic acid selected from the group consisting of hydrochloric acid, sulfuric acid, hydrofluoric acid and a mixture thereof,
- (c) a wetting agent which is a polyhydric alcohol represented by general formula (I)
- HOCH.sub.2 --(CHOH).sub.n --CH.sub.2 OH (I)
- or its oxidized substances, wherein n is 0 to 10, in an amount of 1 to 15,000 ppm based on the cleaning fluid, and
- (d) a phosphonic acid chelating agent in an amount of 1 ppb to 1,000 ppm based on the amount of the cleaning fluid.
An acid or basic hydrogen peroxide cleaning fluid composition for cleaning a semiconductor substrate, which has a surface tension of 60 dyne/cm or less, or a contact angle of 50.degree. or less with respect to a surface of said substrate, comprising
- (a) 0.1 to 30 wt % of a hydrogen peroxide,
- (b) 0.1 to 10 wt % of a base selected from the group consisting of ammonia, hydroxyltrimethylammonium hydroxide and tetramethylammonium hydroxide or an inorganic acid selected from the group consisting of hydrochloric acid, sulfuric acid, hydrofluoric acid and a mixture thereof,
- (c) a wetting agent which is at least one member selected from the group consisting of ethylene glycol, glycerol, sorbitol, glycolic acid, erythritol, xylitol, and mannitol, in an amount of 1 to 15,000 ppm based on the cleaning fluid, and
- (d) a phosphonic acid chelating agent in an amount of 1 ppb to 1,000 ppm based on the amount of the cleaning fluid.
An acid or basic hydrogen peroxide cleaning fluid composition for cleaning a semiconductor substrate, which has a surface tension of 60 dyne/cm or less, or a contact angle of 50.degree. or less with respect to a surface of said substrate, comprising
- (a) 0.1 to 30 wt % of a hydrogen peroxide,
- (b) 0.1 to 10 wt % of a base selected from the group consisting of ammonia, hydroxyltrimethylammonium hydroxide and tetramethylammonium hydroxide or an inorganic acid selected from the group consisting of hydrochloric acid, sulfuric acid, hydrofluoric acid and a mixture thereof,
- (c) a wetting agent which is water-soluble organic additive selected from the group consisting of alcohols, glycols, carboxylic acids, hydroxylic acids, polycarboxylic acids and polyhydric alcohols, in an amount of 1 to 15,000 ppm based on the cleaning fluid, and
- (d) a phosphonic acid chelating agent in an amount of 1 ppb to 1,000 ppm based on the amount of the cleaning fluid.
An acid or basic hydrogen peroxide cleaning fluid composition for cleaning a semiconductor substrate, which has a surface tension of 60 dyne/cm or less, or a contact angle of 50.degree. or less with respect to a surface of said substrate, comprising
- (a) 0.1 to 30 wt % of a hydrogen peroxide,
- (b) 0.1 to 10 wt % of a base selected from the group consisting of ammonia, hydroxyltrimethylammonium hydroxide and tetramethylammonium hydroxide or an inorganic acid selected from the group consisting of hydrochloric acid, sulfuric acid, hydrofluoric acid and a mixture thereof, and
- (c) a wetting agent selected from a polyhydric alcohol represented by the general formula (I)
- HOCH.sub.2 --(CHOH)n--CH.sub.2 OH (n=0 to 10) (I)
- and an oxidation product thereof wherein one or more of the C-hydroxyl groups have been substituted by an aldehyde, carbonyl or carboxyl group, present in an amount of 0.1 to 15,000 ppm based on the cleaning fluid.
A basic hydrogen peroxide cleaning fluid composition for cleaning a semiconductor substrate which has a surface tension of 60 dyne/cm or less, or a contact angle of 50.degree. or less with respect to a surface of said substrate, comprising
- (a) 0.1 to 30 wt % of a hydrogen peroxide,
- (b) 0.1 to 10 wt % of a base selected from the group consisting of an ammonia, hydroxyltrimethylammonium hydroxide and tetramethylammonium hydroxide, and
- (c) a wetting agent selected from a polyhydric alcohol represented by the general formula (I)
- HOCH.sub.2 --(CHOH)n--CH.sub.2 OH (n=0 to 10) (I)
- and an oxidation product thereof wherein one or more of the C-hydroxyl groups have been substituted by an aldehyde, carbonyl or carboxyl group, present in an amount of 1.0 to 15,000 ppm based on the cleaning fluid.
Dependencies are inferred from the claim text.