# US 5,705,080 A · Plasma-inert cover and plasma cleaning process

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- Number: US 5,705,080 A
- Document ID: US5705080A
- Status: Granted
- Kind: A
- Application number: 08/271,134
- Filed: 1994-07-06
- Granted: 1998-01-06
- Earliest claimed: 1994-07-06
- Assignees: Applied Materials, Inc.
- Inventors: Cissy S. Leung; Lawrence Chung-Lai Lei; Sasson Somekh
- Web page: https://patentgrep.com/patent/US5705080A

## CPC

- H10P 72/0406: {for cleaning followed by drying, rinsing, stripping, blasting or the like}
- C23C 16/4405: {Cleaning of reactor or parts inside the reactor by using reactive gases}
- H01J 37/32862: {In situ cleaning of vessels and/or internal parts}
- H01J 2237/022: Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
- Y10S 438/905: Cleaning of reaction chamber
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A process for removing deposits from within a space at least partially delimited by a surface which is subject to attack from a plasma includes the steps of placing on the surface a cover comprising a material which is inert to the plasma, and then removing the deposits.

## Claims

### Claim 1

A chamber cleaning process for removing deposits, formed while processing semiconductor wafers having a major surface of a characteristic shape, from within a space at least partially delimited by a covered area of the surface of a heating surface which is covered by said wafer during processing and is subject to attack from a plasma and with the surface including an uncovered area not covered by the semiconductor wafer during processing, said chamber cleaning process comprising the steps of:
(a) providing a heater plate to define said heating surface, said heater plate having protruding features affixed thereto with said protruding features delimiting the periphery of the covered area on said heater plate and having the characteristic shape of said wafer;
(b) placing on said covered area of the surface a cover having the same characteristic shape of the major surface of said semiconductor wafer, with said cover aligned by said protruding features to completely cover only said covered area and with said cover comprising a material which is inert to said plasma, and
(c) removing said deposits from uncovered areas of said surface by a plasma process.

### Claim 2 (depends on 1)

The process of claim 1 wherein said material is a ceramic material.

### Claim 3 (depends on 2)

The process of claim 2 wherein said material is selected from the group consisting of oxides and nitrides of a metal.

### Claim 4 (depends on 3)

The process of claim 3 wherein said ceramic material is selected from the group consisting of aluminum oxide and aluminum nitride.

### Claim 5 (depends on 1)

The process of claim 1 wherein said material is resistant to thermal shock.

### Claim 6 (depends on 1)

The process of claim 1 wherein said space is a vacuum deposition chamber for processing semiconductor wafers.

### Claim 7 (depends on 6)

The process of claim 6, further comprising the step of depositing upon a wafer disposed on said surface a material selected from the group consisting of tungsten and tungsten silicide, thereby forming said deposits.

### Claim 8 (depends on 1)

The process of claim 1 wherein at least the portion of said cover in contact with said surface is coated with a metal layer.

### Claim 9 (depends on 1)

The process of claim 1 wherein in step (c) said deposits are removed by a plasma etching process comprising the steps of
(i) flowing into said space a gas capable of reacting with said deposits, and
(ii) igniting said plasma in said space while said gas is flowing therein and reacting with said deposits.

### Claim 10 (depends on 9)

The process of claim 9 wherein said gas is a gaseous source of a halogen.

### Claim 11

The process of clam 10 wherein said gas is a gaseous source of fluorine and is selected from the group consisting of NF.sub.3, SF.sub.6, CF.sub.4, and C.sub.2 F.sub.6.

### Claim 12 (depends on 11)

The process of claim 11 wherein step (c) is carried out for a period of time within a range of from about 10 to about 600 seconds and wherein the power of said plasma varies within a range of from about 50 to about 2000 watts as said gaseous source of fluorine flows through said space.

### Claim 13 (depends on 1)

The process of claim 1 wherein said space is heated and wherein said cover is held within said space above said surface for a time sufficient to permit the temperature of said cover to increase such that the risk of thermal shock damage thereto is reduced prior to placement of said cover on said surface.

### Claim 14

A process for removing tungsten or tungsten silicide deposits from uncovered surfaces of a vacuum chamber, with the vacuum chamber comprising a heater plate having an Al heating surface, after processing of a semiconductor wafer therein, where the wafer has a major surface of a characteristic shape and is disposed on the heating surface during processing to cover a covered area of the heater plate and with tungsten, and tungsten silicide deposits forming on an uncovered area of the heating surface of the heater plate not covered by the semiconductor wafer during processing, the process for removing comprising the steps of:
(a) providing the heater plate with protruding features affixed thereto, said protruding features delimiting the periphery of the covered area on said heater plate and having the characteristic shape of said wafer;
(b) selecting a covering wafer having an upper surface formed of Al.sub.2 O.sub.3 or AlN which is inert to fluorine plasma etchants and adheres to tungsten or tungsten silicide particles, with the covering wafer having a major surface of the same shape as the characteristic shape of the major surface of the semiconductor wafer;
(c) completely covering the covered area of the heating surface of said heater plate with said covering wafer, with said covering wafer aligned by said protruding features, to prevent the formation of AlF on the covered part of said heating surface during plasma etching to remove deposits,
(d) flowing into said vacuum chamber a gaseous source of fluorine capable of reacting with said tungsten or tungsten silicide deposits-and removing said deposits from only the uncovered part of the heater plate and other uncovered surfaces of the vacuum chamber, and
(e) igniting said plasma in said vacuum deposition chamber while said gaseous source of fluorine is flowing therein, and reacting with and removing said deposits.

### Claim 15

A process for removing tungsten or tungsten silicide deposits from uncovered surfaces of a vacuum chamber, with the vacuum chamber comprising a heater plate having an Al heating surface, after processing of a semiconductor wafer therein, where the wafer has a major surface having a characteristic shape and is disposed on the heating surface during processing to cover a covered area of the heater plate and with tungsten and tungsten silicide deposits forming on an uncovered area of the heating surface of the heater plate not covered by the semiconductor wafer during processing, the process for removing comprising the steps of:
(a) providing the heater plate with protruding features affixed thereto, said protruding features delimiting the periphery of the covered area on said heater plate and having the characteristic shape of said wafer;
(b) introducing a covering wafer, having a major surface with the same characteristic shape as the major surface of said semiconductor wafer and comprising a ceramic material selected from the group consisting of aluminum oxide and aluminum nitride, into said vacuum deposition chamber,
(c) holding said covering wafer within said vacuum deposition chamber above said heating surface of said heater plate for a time sufficient to permit the temperature of said covering wafer to increase such that the risk of thermal shock damage thereto is reduced,
(d) completely covering the covered area of the heating surface of said heater plate with said covering wafer, with said covering wafer aligned by said protruding features,
(e) flowing NF.sub.3 into said vacuum deposition chamber, and
(f) igniting a plasma in said vacuum deposition chamber while said NF.sub.3 is flowing therein and reacting with said deposits.

### Claim 16

A method for processing semiconductor wafers, having a major surface which has a characteristic shape, in a vacuum processing chamber comprising uncovered surfaces and a heater plate having an upper surface including a covered area of the same characteristic shape as the major surface semiconductor wafers, where the method comprises the steps of protruding features affixed thereto, said protruding features delimiting the periphery of the covered area on said heater plate and having the characteristic shape of said wafer;
(b) processing a semiconductor wafer in said vacuum processing chamber, with the semiconductor wafer aligned by said protruding features to be disposed over the covered area of the heater plate to completely cover the covered area during said processing,
(c) removing said semiconductor wafer from said vacuum processing chamber, and
(d) removing deposits from said vacuum processing chamber by a process which comprises the steps of:
(i) selecting a covering wafer having an upper surface formed of Al.sub.2 O.sub.3 or AlN which is inert to fluorine plasma etchants and adheres to tungsten or tungsten silicide particles, with the cleaning wafer having a major surface of the same shape as the characteristic shape of the major surface of the semiconductor wafer;
(ii) aligning the covering wafer with said protruding features to completely cover the covered area of the heater plate with said covering wafer to prevent the formation of AlF on the covered part of said heating surface during plasma etching to remove deposits,
(iii) flowing into said vacuum chamber a gas capable of reacting with said tungsten or tungsten silicide deposits and removing said deposits from only the uncovered part of the heater plate and other surfaces uncovered surfaces of the vacuum chamber, and
(iv) igniting said plasma in said vacuum processing chamber while said gas is flowing therein and reacting with and removing said deposits.

### Claim 17 (depends on 16)

The method of claim 16 wherein in step (b) said semiconductor wafer is processed by etching.

### Claim 18 (depends on 16)

The method of claim 16 wherein in step (b) said semiconductor wafer is processed by chemical vapor deposition.

### Claim 19 (depends on 16)

The method of claim 16 wherein steps (b) and (c) are sequentially repeated about 25 to about 50 times before step (d) is carried out.

### Claim 20 (depends on 16)

The method of claim 16 further comprising the step (e) of seasoning said vacuum processing chamber.