# US 5,705,029 A · Dry etching method

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- Number: US 5,705,029 A
- Document ID: US5705029A
- Status: Granted
- Kind: A
- Application number: 08/457,748
- Filed: 1995-06-01
- Granted: 1998-01-06
- Earliest claimed: 1986-09-05
- Assignees: Hitachi, Ltd.
- Inventors: Sadayuki Okudaira; Kazunori Tsujimoto; Shinichi Tachi
- Web page: https://patentgrep.com/patent/US5705029A

## CPC

- H10P 50/242: {of Group IV materials}
- H10P 50/266: {by vapour etching only}
- H10P 50/267: {using plasmas}
- H10P 50/268: {of silicon-containing layers}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.

## Claims

### Claim 1

A dry etching method, comprising the steps of;
providing an article to be etched, including a silicon region having a mask pattern thereon, on a support stage located in a reaction chamber;
producing a plasma of Cl.sub.2 gas in said reaction chamber;
lowering the temperature of the article to be etched to a temperature in a range of -60.degree. C. to -120.degree. C., so as to provide the article to have a lowered temperature during the dry etching, including supplying a cooling gas to a back side of said article; and
etching an exposed surface of the article, exposed through the mask pattern, using the plasma,
wherein the step of lowering the temperature includes (1) selectively choosing the temperature at which dry etching is to be performed so as to be a predetermined temperature, said predetermined temperature being determined based upon the material being etched and the etching gas, being within a range which is different for different materials being etched and different etching gases, and being a temperature such that a dimensional shift of the article etched, as compared to a size of the mask pattern, is less than 0.2 .mu.m, and (2) decreasing the temperature of the article to said predetermined temperature.

### Claim 2 (depends on 1)

A dry etching method according to claim 1, wherein the etching gas pressure in the reaction chamber, during the etching, is 1-100 mTorr.

### Claim 3 (depends on 1)

A dry etching method according to claim 1, wherein said temperature is controlled by using a cooling means and a heater.

### Claim 4 (depends on 1)

A dry etching method according to claim 1, wherein a pressure of said cooling gas is above about 1 Torr.

### Claim 5 (depends on 1)

A dry etching method according to claim 1, wherein said support stage is electrically insulated from said reaction chamber by an electrical insulator.

### Claim 6 (depends on 1)

A dry etching method according to claim 1, wherein a vapor pressure of a reaction product of the etching is at most 10.sub.4 times a pressure of the etching gas during the etching.

### Claim 7

A dry etching method, comprising:
providing an article on a support stage in a reaction chamber, said article having a front side and a back side, said front side including a region comprising poly Si or Si and a mask pattern provided over said region;
cooling said support stage to a temperature below 0.degree. C.;
supplying a cooling gas to said back side of said article;
producing a plasma of chlorine gas in said reaction chamber; and
etching said region of said article through said patterned mask using said plasma of said chlorine gas, wherein said article is maintained at a temperature in a range of -120.degree. C. to -60.degree. C. during said etching.

### Claim 8 (depends on 7)

A dry etching method according to claim 7, wherein a pressure of said etching gas in said reaction chamber during said etching is 1-100 mTorr.