# US 5,704,984 A · Chemical vapor deposition apparatus with a heat radiation structure

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- Number: US 5,704,984 A
- Document ID: US5704984A
- Status: Granted
- Kind: A
- Application number: 08/768,703
- Filed: 1996-12-18
- Granted: 1998-01-06
- Earliest claimed: 1995-12-18
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Nam-Jin Lee; Sang-Kook Choi; Hyeog-Joon Ko; Chung-Hwan Kwon
- Web page: https://patentgrep.com/patent/US5704984A

## CPC

- C23C 16/45572: {Cooled nozzles}
- C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A chemical vapor deposition (CVD) apparatus having a heat radiation structure. The CVD apparatus has a process chamber wherein the semiconductor substrate is located, a gas inlet for introducing a process gas into the process chamber, a manifold for supporting the process chamber and the gas inlet, and a heat radiating member provided around the gas inlet, for radiating heat transmitted from the manifold. The gas inlet has a plurality of radiation plates formed around the gas inlet and a plurality of through-holes formed in each of the radiation plates. With the gas inlet having the heat radiating structure, heat from the manifold during the deposition process is not transmitted to the gas supply line and the like. Thus the associated parts are not corroded or deformed.

## Claims

### Claim 1

A chemical vapor deposition apparatus for depositing a thin film on a semiconductor substrate, comprising:
a process chamber wherein the semiconductor substrate is located;
a gas inlet for introducing a process gas into the process chamber;
a manifold for supporting the process chamber and the gas inlet; and
heat radiating means provided around the gas inlet for radiating heat transmitted from the manifold.

### Claim 2 (depends on 1)

The chemical vapor deposition apparatus of claim 1, wherein said process chamber comprises a vertical furnace having a first outer tube and a second tube formed inside the first outer tube.

### Claim 3 (depends on 1)

The chemical vapor deposition apparatus of claim 1, wherein said heat radiation means is integrally provided with said gas inlet.

### Claim 4 (depends on 1)

The chemical vapor deposition apparatus of claim 1, wherein said heat radiating means comprises a plurality of radiation plates formed around the gas inlet.

### Claim 5 (depends on 3)

The chemical vapor deposition apparatus of claim 3, wherein said heat radiating means comprises a plurality of radiation plates formed around the gas inlet.

### Claim 6 (depends on 4)

The chemical vapor deposition apparatus of claim 4, further comprising a plurality of through-holes formed in each of the radiation plates.

### Claim 7 (depends on 4)

The chemical vapor deposition apparatus of claim 4, wherein a diameter of each of the through-holes is larger than a thickness of each of the radiation plates.