# US 5,704,981 A · Processing apparatus for substrates to be processed

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- Number: US 5,704,981 A
- Document ID: US5704981A
- Status: Granted
- Kind: A
- Application number: 08/626,454
- Filed: 1996-04-02
- Granted: 1998-01-06
- Earliest claimed: 1995-04-05
- Assignees: Tokyo Electron Limited
- Inventors: Shunji Kawakami; Yoji Mizutani; Yutaka Miura; Takahiro Shimoda
- Web page: https://patentgrep.com/patent/US5704981A

## CPC

- C23C 16/45565: {Shower nozzles}
- C23C 16/455: characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C 16/45578: {Elongated nozzles, tubes with holes}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A partition member with a buffer plate disposed on the top surface thereof is disposed in a region belonging to a surface-to-be-processed of a substrate-to-be-processed held in a processing apparatus. An injector having cross-sectional areas decreasing toward the forward end thereof is disposed in the partition member. The injector has a number of injection holes formed length-wise therein at a constant pitch and in the same bore, whereby a processing gas can be injected very uniformly in the longitudinal direction and diffuse in the partition member. Then the processing gas is passed through vent holes formed in the buffer plate uniformly into the processing chamber. The processing gas can be fed uniformly onto the surface-to-be-processed of the substrate-to-be-processed, and a deposited thin film can have high intra-surface thickness uniformity.

## Claims

### Claim 1

A processing apparatus comprising:
gas feed means disposed opposed to a substrate-to-be-processed held in a processing vessel for feeding a processing gas to the substrate for processing the substrate,
the gas feed means being disposed on a forward end of a gas feed pipe, and
the gas feed means including a gas injection unit which includes a hollow member having cross-sectional areas which decrease toward the forward end thereof and a plurality of gas injection holes formed in the hollow member in the longitudinal direction thereof.

### Claim 2 (depends on 1)

The processing apparatus according to claim 1, further comprising:
a buffer plate having a number of vent holes formed therein, the vent holes being opposed to the gas injection unit through a space between the substrate-to-be-processed and the buffer plate; and
a partition member enclosing the gas injection unit.

### Claim 3 (depends on 1)

The processing apparatus according to claim 1, wherein a surface-to-be-processed of the substrate to be processed is faced downward.

### Claim 4 (depends on 1)

The processing apparatus according to claim 1, wherein a surface-to-be-processed of the substrate to be processed is faced upward.

### Claim 5 (depends on 1)

The processing apparatus according to claim 1, wherein the substrate to be processed is a glass substrate.

### Claim 6 (depends on 1)

The processing apparatus according to claim 1, wherein the substrate to be processed is a semiconductor wafer.