# US 5,704,975 A · Selective crystal growth method of compound semiconductor

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- Number: US 5,704,975 A
- Document ID: US5704975A
- Status: Granted
- Kind: A
- Application number: 08/415,988
- Filed: 1995-04-04
- Granted: 1998-01-06
- Earliest claimed: 1994-04-21
- Assignees: NEC Corporation
- Inventors: Ryuji Kobayashi; Hitoshi Hotta
- Web page: https://patentgrep.com/patent/US5704975A

## CPC

- H10P 14/2909: {Phosphides}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/271: {characterised by the preparation of substrate for selective deposition}
- H10P 14/2911: {Arsenides}
- H10P 14/3418: {Phosphides}
- H10P 14/3421: {Arsenides}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed herein is a selective metalorganic vapor phase growth method of a group III-V compound semiconductor containing at least Al and In, in which a ratio of an HCl gas supply amount to a supply amount of a group III metalorganic material (›HCl supply amount!/›group III supply amount!) is set in a range of 0.01-0.3. Hence, a polycrystal density is decreased to ensure a selectivity, and a grown crystal composition can be controlled so as not to be excessive in the Al composition so that composition control can be done easily.

## Claims

### Claim 1

A selective crystal growth method of a III-V compound semiconductor containing at least Al and In, in which
an HCl gas, a group III metalorganic material, and a group V material are supplied on a semiconductor substrate having a surface portion partially covered with an insulating film to form said compound semiconductor on a surface portion not covered with said insulating film, wherein
a ratio of said HCl gas supply amount to a total supply amount of the group III metalorganic material is set in the range of 0.01 to 0.3, and said compound semiconductor is lattice matched with said semiconductor substrate.

### Claim 2

A selective crystal growth method of an AlInP compound semiconductor, in which
an HCl gas, a group III metalorganic material, and a phosphorus material are supplied on a GaAs substrate having a surface portion partially covered with an insulating film to form said compound semiconductor on a surface portion not covered with said insulating film, wherein
a ratio of said HCl gas supply amount to a total supply amount of the group III metalorganic material is set in the range of 0.01 to 0.3, and said AlInP compound semiconductor is lattice matched with said GaAs substrate.

### Claim 3 (depends on 2)

The selective crystal growth method as set forth in claim 2, wherein the Al composition of said AlInP compound semiconductor is in a range of 0.48 to 0.52.

### Claim 4

A selective crystal growth method of an AlGaInP compound semiconductor, in which
an HCl gas, a group III metalorganic material, and a group V material are supplied on a GaAs substrate having a surface portion partially covered with an insulating film to form said compound semiconductor on a surface portion not covered with said insulating film, wherein
a ratio of said HCl gas supply amount to a total supply amount of the group III metalorganic material is set in the range of 0.01 to 0.3, said AlGaInP compound semiconductor is lattice matched with said GaAs substrate, and a ratio Al to Ga composition of said AlGaInP compound semiconductor is larger than 2.33.

### Claim 5 (depends on 4)

The selective crystal growth method as set forth in claim 4, wherein the substrate temperature during said selective crystal growth is in the range of 630.degree. to 720.degree. C.

### Claim 6

A selective crystal growth method of an AlInAs compound semiconductor, in which
an HCl gas, a group III metalorganic material, and an arsenic material are supplied on an InP substrate having a surface portion partially covered with an insulating film to form said compound semiconductor on a surface portion not covered with said insulating film, wherein
a ratio of said HCl gas supply amount to a total supply amount of the group III metalorganic material is set in the range of 0.01 to 0.3, said AlInAs compound semiconductor is lattice matched with said InP substrate.

### Claim 7 (depends on 6)

The selective crystal growth method as set forth in claim 6, wherein the Al composition of said AlInAs compound semiconductor is in a range of 0.46 to 0.48.