# US 5,703,820 A · Semiconductor memory device with precharge time improved > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,703,820 A - Document ID: US5703820A - Status: Granted - Kind: A - Application number: 08/794,465 - Filed: 1997-02-04 - Granted: 1997-12-30 - Earliest claimed: 1996-03-28 - Assignees: NEC Corporation - Inventors: Takaki Kohno - Web page: https://patentgrep.com/patent/US5703820A ## CPC - G11C 7/14: Dummy cell management; Sense reference voltage generators - G11C 7/062: {Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs} - G11C 7/12: Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A semiconductor memory device includes a memory cell array composed of a plurality of memory cells arranged in a matrix manner and at least one reference memory cell, wherein a plurality of digit lines are respectively connected to columns of memory cells, a plurality of word lines are respectively connected to rows of memory cells, and a reference digit line is connected to the reference memory cell, an address circuit for selecting one of the plurality of digit lines and one of the plurality of word lines in response to input of an address to select one of the plurality of memory cells, a sense amplifier connected to the plurality of digit lines and the reference digit line, for sensing data which has been stored in the selected memory cell in response to a first portion of a sense control signal, a discharging circuit for discharging charge of at least one of the plurality of digit lines which is connected to the selected memory cell and charge of the reference digit line in response to a second portion of the sense control signal, and a control section for outputting the sense control signal to the sense amplifier and the discharging circuit in response to the input of the address. ## Claims ### Claim 1 A semiconductor memory device, comprising: a memory cell array composed of a plurality of memory cells arranged in a matrix manner and at least one reference memory cell, wherein a plurality of digit lines are respectively connected to columns of memory cells, a plurality of word lines are respectively connected to rows of memory cells, and a reference digit line is connected to said reference memory cell; an address circuit for selecting one of said plurality of digit lines and one of said plurality of word lines in response to input of an address to select one of said plurality of memory cells; a sense amplifier connected to said plurality of digit lines and said reference digit line, for sensing data which has been stored in said selected memory cell in response to a first portion of a sense control signal; a discharging circuit for discharging charge of at least one of said plurality of digit lines which is connected to the selected memory cell and charge of said reference digit line in response to a second portion of said sense control signal; and control means for outputting said sense control signal to said sense amplifier and said discharging circuit in response to the input of the address. ### Claim 2 (depends on 1) A semiconductor memory device according to claim 1, wherein said discharging circuit includes a plurality of MOS transistors respectively provided for said plurality of digit lines and said reference digit line such that charges of all of said plurality of digit lines and the charge of said reference digit line are discharged in response to said second portion of said sense control signal. ### Claim 3 (depends on 1) A semiconductor memory device according to claim 1, wherein said discharging circuit includes: a plurality of MOS transistors respectively provided for said plurality of digit lines; and a plurality of gate circuits provided for said plurality of digit lines to control said plurality of MOS transistors, respectively, and wherein the charge of said reference digit line is discharged in response to said second portion of said sense control signal, and wherein one of said plurality of gate circuits associated with the selected memory cell sets a corresponding one of said plurality of MOS transistors to a conductive state in response to said second portion of said sense control signal such that the charge of the digit line connected to the selected memory cell is discharged. ### Claim 4 (depends on 1) A semiconductor memory device according to claim 1, wherein said discharging circuit includes: a delay circuit for delaying said sense control signal by a predetermined delay time; and a plurality of MOS transistors respectively provided for said plurality of digit lines and said reference digit line such that charges of all of said plurality of digit lines and the charge of said reference digit line are discharged in response to said second portion of said delayed sense control signal. ### Claim 5 (depends on 1) A semiconductor memory device according to claim 1, wherein said sense amplifier includes: a first MOS transistor connected to said plurality of digit lines; a second MOS transistor connected to said reference digit line; and a differential amplifier for comparing an output of said first MOS transistor and an output of said second MOS transistor and outputting the comparing result, and wherein said first and second MOS transistors are set to a conductive state in response to said first portion of said sense control signal and are set to a non-conductive state in response to said second portion of said sense control signal. ### Claim 6 (depends on 1) A semiconductor memory device according to claim 1, further comprising a latch circuit for latching an output of said sense amplifier in response to a latch control signal, and wherein said control means further generates said latch control signal when the output of said sense amplifier is determined. ### Claim 7 (depends on 1) A semiconductor memory device according to claim 1, further comprising a latch circuit for latching an output of said sense amplifier in response to said second portion of said sense control signal. ### Claim 8 A semiconductor memory device, comprising: a memory cell array composed of a plurality of memory cells arranged in a matrix manner and at least one reference memory cell, wherein a plurality of digit lines are respectively connected to columns of memory cells, a plurality of word lines are respectively connected to rows of memory cells, and a reference digit line is connected to said reference memory cell; an address circuit for selecting one of said plurality of digit lines and one of said plurality of word lines in response to input of an address to select one of said plurality of memory cells; a sense amplifier connected to said plurality of digit lines and said reference digit line, for sensing data which has been stored in said selected memory cell in response to a first control signal which is active during a read access cycle; a discharging circuit for discharging charge of at least one of said plurality of digit lines which is connected to the selected memory cell and charge of said reference digit line in response to a second control signal; and control means for outputting said first control signal to said sense amplifier in a chip enable signal and outputting said second control signal to said discharging circuit in response to the input of the address and said first control signal. ### Claim 9 (depends on 8) A semiconductor memory device according to claim 8, wherein said discharging circuit includes a plurality of MOS transistors respectively provided for said plurality of digit lines and said reference digit line such that charges of all of said plurality of digit lines and the charge of said reference digit line are discharged in response to said second control signal. ### Claim 10 (depends on 8) A semiconductor memory device according to claim 8, wherein said discharging circuit includes: a plurality of MOS transistors respectively provided for said plurality of digit lines; and a plurality of gate circuits provided for said plurality of digit lines to control said plurality of MOS transistors, respectively, and wherein the charge of said reference digit line is discharged in response to said second portion of said sense control signal, and wherein one of said plurality of gate circuits associated with the selected memory cell sets a corresponding one of said plurality of MOS transistors to a conductive state in response to said second control signal such that the charge of the digit line connected to the selected memory cell is discharged. ### Claim 11 (depends on 8) A semiconductor memory device according to claim 8, wherein said discharging circuit includes: a delay circuit for delaying said second control signal by a predetermined delay time; and a plurality of MOS transistors respectively provided for said plurality of digit lines and said reference digit line such that charges of all of said plurality of digit lines and the charge of said reference digit line are discharged in response to said delayed second control signal. ### Claim 12 (depends on 8) A semiconductor memory device according to claim 8, further comprising a latch circuit for latching an output of said sense amplifier in response to a third control signal, and wherein said control means further generates said third control signal when an output of said sense amplifier is determined. ### Claim 13 (depends on 8) A semiconductor memory device according to claim 8, further comprising a latch circuit for latching an output of said sense amplifier in response to said second control signal. ### Claim 14 A method of reading a data in a semiconductor memory device, comprising the steps of: selecting one of a plurality of memory cells arranged in a matrix manner in accordance with an inputted address, wherein a plurality of digit lines are respectively connected to columns of memory cells, a plurality of word lines are respectively connected to rows of memory cells, and a reference digit line is connected to a reference memory cell; disconnecting said plurality of digit lines and said reference digit line from said ground potential in a first portion of said current read access cycle; connecting a selection digit line of said plurality of digit lines which is connected to the selected memory cell and said reference digit line to a sense amplifier in said first portion of said current read access cycle; in said first portion of said current read access cycle, charging said selection digit line in accordance with a data which has been stored in the selected memory cell, and charging said reference digit line in accordance with a reference data which has been stored in said reference memory cell; and sensing the data, which has been stored in the selected memory cell, from a potential of said selection digit line and a potential of said reference digit line by said sense amplifier in said first portion of said current read access cycle. ### Claim 15 (depends on 14) A method according to claim 14, further comprising the steps of: disconnecting said selection digit line and said reference digit line from said differential amplifier in a second portion of said current read access cycle subsequent to said first portion; and connecting at least said selection digit line and said reference digit line to a ground potential in said second portion of said current read access cycle such that charge of said selection digit line and charge of said reference digit line are discharged. ### Claim 16 (depends on 14) A method according to claim 14, wherein said plurality of digit lines and said reference digit line have been set to a ground potential before said current read access cycle. ### Claim 17 (depends on 15) A method according to claim 15, wherein said selecting step includes generating a Y selection signal to select said selection digit line of said plurality of digit lines, and wherein said step of connecting at least said selection digit line and said reference digit line to a ground potential includes connecting said selection digit line to the ground potential in response to the Y selection signal in said second portion of said current read access cycle. ### Claim 18 (depends on 15) A method according to claim 15, further including generating a charge/discharge control signal to control the connection of at least said selection digit line and said reference digit line to the ground potential, and said step of connecting at least said selection digit line and said reference digit line to a ground potential includes delaying said charge/discharge control signal by a predetermined time period before the control of the connection.