# US 5,703,522 A · Switched substrate bias for MOS-DRAM circuits > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,703,522 A - Document ID: US5703522A - Status: Granted - Kind: A - Application number: 08/708,429 - Filed: 1996-09-05 - Granted: 1997-12-30 - Earliest claimed: 1993-11-29 - Assignees: Mitsubishi Denki Kabushiki Kaisha - Inventors: Kazutami Arimoto; Masaki Tsukude - Web page: https://patentgrep.com/patent/US5703522A ## CPC - H10D 86/201: {the substrates comprising an insulating layer on a semiconductor body, e.g. SOI (H10D86/40 take precedence)} - H03K 19/0016: {by using a control or a clock signal, e.g. in order to apply power supply} - H10D 89/213: {in field-effect devices} - H03K 2217/0018: Special modifications or use of the back gate voltage of a FET - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) ## Abstract A semiconductor circuit or a MOS-DRAM wherein a converter is provided that converts substrate potential or body bias potential between two values for MOS-FETs in a logic circuit, memory cells, and operating circuit of the MOS-DRAM, thereby raising the threshold voltage of the MOS-FETs when in the standby state and lowering it when in active state. The converter includes a level shift circuit and a switch circuit. The substrate potential or body bias potential is controlled only of the MOS-FETs which are nonconducting in the standby state; this configuration achieves a reduction in power consumption associated with the potential switching. Furthermore, in a structure where MOS-FETs of the same conductivity type are formed adjacent to each other, MOS-FETs of SOI structure are preferable for better results. ## Claims ### Claim 1 A MOS-DRAM array, comprising: a plurality of memory cells arranged in rows and columns, each memory cell including an MOS-FET to which a first potential or a second potential is supplied as a substrate potential; a voltage supply means for supplying said first and second potentials; and means for providing one of said first potential and said second potential to the MOS-FET of each memory cell as said substrate potential according to an operation state of said MOS-DRAM array, wherein said means for providing one of said first potential and said second potential includes a level shift circuit receiving a signal representative of said operation state of said MOS-DRAM array and outputting a control signal in accordance with said operation state of said MOS-DRAM, and a switch circuit receiving the control signal output from the level shift circuit to control switching between said first potential and said second potential to supply either the first potential or second potential as said substrate potential to the MOS-FET of each memory cell as said substrate potential. ### Claim 2 (depends on 1) The MOS-DRAM according to claim 1, wherein the MOS-FET of each memory cell has an SOI structure and the first potential or the second potential is to be supplied as body bias potential. ### Claim 3 A MOS-DRAM comprising: a plurality of memory cells arranged in rows and columns; a logic circuit used for row operating and column operating circuits, said logic circuit including at least one MOS-FET to which a first potential or a second potential is supplied as a substrate potential; a voltage supply means for supplying said first and second potentials; and means for providing one of said first potential and said second potential to said at least one MOS-FET of said logic circuit as said substrate potential according to an operation state of said MOS-DRAM array, wherein said means for providing one of said first potential and said second potential includes a level shift circuit receiving a signal representative of said operation state of said MOS-DRAM array and outputting a control signal in accordance with said operation state of said MOS-DRAM, and a switch circuit receiving the control signal output from the level shift circuit to control switching between said first potential and said second potential to supply either the first potential or second potential as said substrate potential to the MOS-FET of each memory cell as said substrate potential. ### Claim 4 (depends on 3) The MOS-DRAM according to claim 3, further comprising a clock signal generating means, responsive to said operation state of said MOS-DRAM array, for generating a control clock signal to activate said logic circuit, wherein said means for providing one of said first potential and said second potential includes supplies said first potential or said second potential as said substrate potential to said at lease one MOS-FET according to said control clock signal. ### Claim 5 (depends on 3) The MOS-DRAM according to claim 3, wherein said logic circuit is a word driver. ### Claim 6 (depends on 5) The MOS-DRAM according to claim 5, wherein said at least one MOS-FET in said word driver is connected to said means for providing one of said first potential and said second potential to said at least one MOS-FET on a column-by-column basis. ### Claim 7 A MOS-DRAM comprising: a plurality of memory cells arranged in rows and columns, each memory cell including an MOS-FET to which a first potential or a second potential is supplied as a substrate potential; a voltage supply means for supplying said first and second potentials; and means for providing one of said first potential and said second potential to the MOS-FET of each memory cell as said substrate potential according to a signal for activating said plurality of memory cells, wherein said means for providing one of said first potential and said second potential includes a level shift circuit receiving a signal representative of said operation state of said MOS-DRAM array and outputting a control signal in accordance with said signal for activating said plurality of memory cells, and a switch circuit receiving the control signal output from the level shift circuit to control switching between said first potential and said second potential to supply either the first potential or second potential as said substrate potential to the MOS-FET of each memory cell as said substrate potential. ### Claim 8 (depends on 7) The MOS-DRAM according to claim 7, wherein the MOS-FET of each memory cell has an SOI structure and the first potential or the second potential is to be supplied as body bias potential. ### Claim 9 (depends on 8) The MOS-DRAM according to claim 8, wherein said logic circuit is used for row operating and column operating circuits. ### Claim 10 (depends on 9) The MOS-DRAM according to claim 9, further comprising a clock signal generating means, responsive to said operation state of said MOS-DRAM array, for generating a control clock signal to activate said logic circuit, wherein said means for providing one of said first potential and said second potential supplies said first potential or said second potential as said body bias potential to said at lease one MOS-FET according to said control clock signal. ### Claim 11 (depends on 7) The MOS-DRAM according to claim 7, wherein the MOS-FET of each memory cell has an SOI structure and the first potential or the second potential is to be supplied as body bias potential. ### Claim 12 (depends on 8) The MOS-DRAM according to claim 8, wherein said logic circuit is a word driver. ### Claim 13 (depends on 12) The MOS-DRAM according to claim 12, wherein said at least one MOS-FET in said word driver is connected to said means for providing one of said first potential and said second potential to said at least one MOS-FET on a column-by-column basis.