# US 5,703,408 A · Bonding pad structure and method thereof

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- Number: US 5,703,408 A
- Document ID: US5703408A
- Status: Granted
- Kind: A
- Application number: 08/419,558
- Filed: 1995-04-10
- Granted: 1997-12-30
- Earliest claimed: 1995-04-10
- Assignees: United Microelectronics Corp.
- Inventors: Liu Ming-Tsung; Bill Y. B. Hsu; Hsien-Dar Chung; Der-Yuan Wu
- Web page: https://patentgrep.com/patent/US5703408A

## CPC

- H10W 72/019: {of bond pads}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/934: {Cross-sectional shape, i.e. in side view}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/983: {Reinforcing structures, e.g. collars}
- Y10T 29/49124: On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T 29/49155: Manufacturing circuit on or in base
- Y10T 29/49204: Contact or terminal manufacturing
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A structure and a process for forming an improved bonding pad which allows better bonding between a bond wire and a metal bonding pad. Stripes are formed on a substrate. A conformal dielectric layer, a conformal barrier layer and a metal layer are formed over the stripes. A passivation layer with a window is formed defining a bonding pad area. The stripes promote an irregular surface in the barrier and metal layers which reduce stress between the dielectric layer, the barrier layer and the metal layer. Also, the irregular surfaces increase the barrier metal adhesion to the dielectric layer, reduce bond pad peel off, and increase bonding yields.

## Claims

### Claim 1

An improved bonding pad on a bonding pad area on a substrate comprising:
spaced stripes on the substrate in a least the bonding pad area, the stripes arranged in a pattern of broken parallel spaced lines:
a conformal dielectric layer over at least the stripes presenting an irregular top surface configuration including grooves, said grooves having a depth;
a conformal barrier layer over the dielectric layer, said conformal barrier layer having an irregular top surface configuration including grooves;
a conformal metal layer over said barrier layer; and
a passivation layer over said metal layer having a window over the bonding pad area.

### Claim 2

An improved bonding pad on a bonding pad area on a substrate comprising:
spaced stripes on the substrate in a least the bonding pad area, the stripes arranged in a pattern of spaced concentric broken circles;
a conformal dielectric layer over at least the stripes presenting an irregular top surface configuration including grooves, said grooves having a depth;
a conformal barrier layer over the dielectric layer, said conformal barrier layer having an irregular top surface configuration including grooves;
a conformal metal layer over said barrier layer; and
a passivation layer over said metal layer having a window over the bonding pad area.

### Claim 3 (depends on 1)

The bonding pad of claim 1 wherein the barrier layer is formed of a material selected from the group consisting of titanium nitride, titanium tungsten, titanium, and tungsten.

### Claim 4 (depends on 1)

The bonding pad of claim 1 wherein the barrier layer has a thickness in the range of about 500 to 2000 .ANG..

### Claim 5 (depends on 1)

The bonding pad of claim 1 wherein the dielectric layer is formed of a material selected from the group consisting of phosphosilicate glass, silicon oxide and borophosphosilicate glass.

### Claim 6 (depends on 1)

The bonding pad of claim 1 wherein the dielectric layer has a thickness in the range of about 2000 to 10,000 .ANG..

### Claim 7 (depends on 1)

The bonding pad of claim 1 wherein the metal layer comprises a material selected form the group consisting of copper and aluminum.

### Claim 8 (depends on 1)

The bonding pad of claim 1 wherein the metal layer has a thickness in the range of between about 2000 to 12,000 .ANG..

### Claim 9 (depends on 1)

The bonding pad of claim 1 wherein the passivation layer has a thickness in the range of about 3000 to 20,000 .ANG..

### Claim 10 (depends on 1)

The bonding pad of claim 1 wherein the passivation layer is formed from a material selected from the group consisting of silicon nitride, silicon oxynitride, borophosphosilicate glass, silicon oxide and borophosphosilicate glass.

### Claim 11 (depends on 1)

The bonding pad of claim 1 wherein the substrate includes a insulating layer formed from a material selected from the group consisting of phosphosilicate glass, borophosphosilicate glass, and silicon oxide.

### Claim 12 (depends on 1)

The bonding pad of claim 1 wherein the stripes are composed of a material selected from the group consisting of polycide, polysilicon, titanium tungsten, a metal, and titanium nitride.

### Claim 13 (depends on 1)

The bonding pad of claim 1 wherein the stripes have a thickness in the range of about 1000 to 8000 .ANG. and a width in the range of about 0.5 to 20 microns.

### Claim 14 (depends on 1)

The bonding pad of claim 1 wherein the depth of said grooves in the conformal dielectric layer is in the range of about 1000 to 8000 .ANG..

### Claim 15 (depends on 2)

The bonding pad of claim 2 wherein the substrate includes a insulating layer formed from a material selected from the group consisting of phosphosilicate glass, borophosphosilicate glass, and silicon oxide.

### Claim 16 (depends on 2)

The bonding pad of claim 2 wherein the stripes are composed of a material selected from the group consisting of polycide, polysilicon, titanium tungsten, a metal, and titanium nitride.

### Claim 17 (depends on 2)

The bonding pad of claim 2 wherein the stripes have a thickness in the range of about 1000 to 8000 .ANG. and a width in the range of about 0.5 to 20 microns.

### Claim 18 (depends on 2)

The bonding pad of claim 2 wherein the depth of said grooves in the conformal dielectric layer is in the range of about 1000 to 8000 .ANG..

### Claim 19 (depends on 2)

The bonding pad of claim 2 wherein the barrier layer is formed of a material selected from the group consisting of titanium nitride, titanium tungsten, titanium, and tungsten.

### Claim 20 (depends on 2)

The bonding pad of claim 2 wherein the barrier layer has a thickness in the range of about 500 to 2000 .ANG..
