# US 5,703,404 A · Semiconductor device comprising an SiOF insulative film

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- Number: US 5,703,404 A
- Document ID: US5703404A
- Status: Granted
- Kind: A
- Application number: 08/772,953
- Filed: 1996-12-24
- Granted: 1997-12-30
- Earliest claimed: 1995-10-23
- Assignees: Mitsubishi Denki Kabushiki Kaisha
- Inventors: Masazumi Matsuura
- Web page: https://patentgrep.com/patent/US5703404A

## CPC

- H10P 14/69215: {the material being a silicon oxide, e.g. SiO2}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/662: {Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548)}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/6924: {the material being halogen doped silicon oxides, e.g. FSG}
- H10W 20/071: {of dielectric parts thereof}
- H10W 20/077: {on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence)}
- H10W 20/48: Insulating materials thereof
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device having an interlayer insulating film improved to decrease film shrinkage and film stress is provided. Metal interconnections are formed on a substrate. A silicon oxide film is provided on the substrate to cover the metal interconnections and to fill a space between the metal interconnections. The chemical formula of the silicon oxide film contains Si-F bond.

## Claims

### Claim 1

A semiconductor device, comprising:
a substrate;
first and second metal interconnections formed on said substrate; and
a silicon oxide film formed on said substrate, and covering said first and second metal interconnections and filling a space between said first metal interconnection and said second metal interconnection,
wherein the chemical formula of said silicon oxide film contains the following chemical structure unit. ##STR4##

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
the chemical formula of said silicon oxide film contains the following unit. ##STR5##

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein an inequality a<b is established, wherein a represents that thickness of said silicon oxide film lying on said first and second metal interconnections and b represents that thickness of said silicon oxide film lying on said substrate and lying between said first metal interconnection and said second metal interconnection.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein said silicon oxide film contains boron atoms or phosphorus atoms.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein said boron atoms or said phosphorus atoms are contained by five to ten mol %.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, further comprising a plasma oxide film covering said first and second interconnections.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein
the chemical formula of said silicon oxide film contains the following unit. ##STR6##

### Claim 8 (depends on 1)

The semiconductor device according to claim 1,
said chemical structure units are uniformly distributed in said silicon oxide film.