# US 5,703,403 A · Electrode for semiconductor device and method for producing the same

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- Number: US 5,703,403 A
- Document ID: US5703403A
- Status: Granted
- Kind: A
- Application number: 08/754,383
- Filed: 1996-11-21
- Granted: 1997-12-30
- Earliest claimed: 1993-11-08
- Assignees: Nippondenso Co., Ltd.
- Inventors: Susumu Sobue; Takeshi Yamauchi; Shinichi Mukainakano
- Web page: https://patentgrep.com/patent/US5703403A

## CPC

- H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

An electrode for semiconductor devices, which can restrain the occurrence of Al voids and has a high barrier effect, is obtained by inserting a material which has a close resemblance in crystal structure to the barrier layer of a contact part and the aluminum alloy with the crystal surface thereof being oriented mainly at the (111) plane into the interface between the above barrier layer and the aluminum alloy. A semiconductor device according to the present invention comprises a silicon substrate, an interlayer insulating film partially formed on the silicon substrate, a titanium silicide layer formed on the silicon substrate at the part where the interlayer insulating film is not formed, a titanium layer formed on the interlayer insulating film and connected to the titanium silicide layer, a titanium nitride layer formed on the titanium layer and the titanium silicide layer, a Ti--Al--N layer such as Ti.sub.3 AlN and formed on the titanium nitride layer, and an aluminum alloy (Al-1%Si-0.5%Cu) composing an electrode formed on the Ti--Al--N layer.

## Claims

### Claim 1

An electrode for a semiconductor device comprising:
a barrier layer disposed on a substrate and composed of an intermetallic compound containing a metal with a high melting point and nitrogen (N);
a nitride layer disposed on said barrier layer and defined by an intermetallic compound containing an element making up said barrier layer and aluminum (Al) as components thereof, said nitride layer having a thickness of at least 30 .ANG.; and
an aluminum alloy wiring disposed on said nitride layer such that a crystal surface thereof is oriented mainly at the (111) plane, wherein:
an oxygen concentration in said barrier layer is no greater than 1 at %;
an oxygen concentration at an interface between said barrier layer and said nitride layer is no greater than 1 at %; and
a margin of difference between an interatomic distance of said nitride layer and an interatomic distance of said aluminum alloy wiring is no greater than 5%.

### Claim 2 (depends on 1)

The electrode for a semiconductor device according to claim 1, wherein
said substrate is composed of a silicon (Si) substrate;
said barrier layer is composed of titanium nitride (TiN); and
said nitride layer is composed of Ti.sub.3 AlN mainly.

### Claim 3 (depends on 1)

The electrode for a semiconductor device according to claim 1, wherein said barrier layer contains no oxygen or said oxygen concentration is no greater than 1 at %;
said aluminum alloy wiring is disposed on said barrier layer such that said aluminum alloy wiring contains no oxygen or an oxygen concentration of said aluminum alloy wiring is no greater than 1 at %;
said nitride layer is disposed between said barrier layer and said aluminum alloy wiring by annealing said barrier layer and said aluminum alloy wiring.

### Claim 4 (depends on 1)

The electrode for a semiconductor device according to claim 1, wherein a margin of difference between an interatomic distance of said barrier layer and an interatomic distance of said nitride layer is 5% or less.

### Claim 5 (depends on 1)

The electrode for a semiconductor device according to claim 1, wherein
a thickness of said nitride layer is at least 40 .ANG.;
a margin of difference between an interatomic distance of said barrier layer and an interatomic distance of said nitride layer is no greater than 3%; and
a margin of difference between an interatomic distance of said nitride layer and an interatomic distance of said aluminum alloy wiring is no greater than 3%.

### Claim 6 (depends on 1)

The electrode for a semiconductor device according to claim 1, wherein
said metal with a high melting point contained in said barrier layer is selected from the group consisting of titanium (Ti), tungsten (W) and molybdenum (Mo).