# US 5,703,397 A · Semiconductor package having an aluminum nitride substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,703,397 A - Document ID: US5703397A - Status: Granted - Kind: A - Application number: 08/745,367 - Filed: 1996-11-08 - Granted: 1997-12-30 - Earliest claimed: 1991-11-28 - Inventors: Mitsuyoshi Endo; Hironori Asai; Keiichi Yano; Yoshitoshi Sato - Web page: https://patentgrep.com/patent/US5703397A ## CPC - H10W 70/68: Shapes or dispositions thereof - H10W 40/22: characterised by their shape, e.g. having conical or cylindrical projections - H10W 40/259: {Ceramics or glasses (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)} - H10W 70/65: Shapes or dispositions of interconnections - H10W 70/685: comprising multiple insulating layers - H10W 70/692: Ceramics or glasses - H10W 76/60: Seals - H10W 70/655: Fan-out layouts - H10W 70/682: {comprising holes having chips therein} - H10W 90/754: {between a chip and a stacked insulating package substrate, interposer or RDL} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor ceramic multilayer package comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to the semiconductor element, connecting terminals connected to the wiring pattern and disposed on the other surface of the aluminum nitride substrate, and a sealing member connected to the aluminum nitride substrate with a metallic bonding layer or a glass layer having a thickness of not more than 100 .mu.m in such a manner as to seal the semiconductor element possesses a notably improved heat-radiating property and accomplishes the object of increasing the number of pins and reducing the size of package. ## Claims ### Claim 1 A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on the other surface of said aluminum nitride substrate, and a ceramic sealing member joined to said one surface of said aluminum nitride substrate at an area other than a region forming said wiring pattern, through the medium of a junction layer in such a manner as to seal said semiconductor element, said junction layer solely consisting of metal and having no insulating film. ### Claim 2 (depends on 1) A semiconductor package according to claim 1, wherein said metallic layer is an Au--Sn alloy layer. ### Claim 3 (depends on 1) A semiconductor package according to claim 1, wherein said ceramic sealing member has a U-shaped cross section. ### Claim 4 (depends on 1) A semiconductor package according to claim 1, wherein said aluminum nitride substrate having said semiconductor element mounted thereon is a flat-surfaced substrate. ### Claim 5 (depends on 1) A semiconductor package according to claim 1, wherein said ceramic sealing member is formed of aluminum nitride. ### Claim 6 A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, the adjacent connecting terminals in said lattice arrangement having an intercentral distance of not more than 1.27 mm (50 mils), and a sealing member joined to said one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element. ### Claim 7 (depends on 6) A semiconductor package according to claim 6, wherein said sealing member is formed of a ceramic material. ### Claim 8 (depends on 7) A semiconductor package according to claim 7, wherein said sealing member is formed of aluminum nitride. ### Claim 9 A semiconductor package, comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to sail semiconductor element, a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride substrate, a distance from an external edge of said aluminum nitride substrate to said connecting terminals being larger than an intercentral distance of the adjacent connecting terminals in said lattice arrangement, and a sealing member joined to said one surface of said aluminum nitride substrate in such a manner as to seal said semiconductor element. ### Claim 10 A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to said semiconductor element, a sealing member connected to said aluminum nitride multilayer substrate in such a manner as to seal said semiconductor element, and a multiplicity of connecting terminals electrically connected to said wiring pattern and disposed on said one or the other surface of said aluminum nitride multilayer substrate, said aluminum nitride multilayer substrate being formed by having integrally superposed in the direction of thickness aluminum nitride wiring layers provided with an internal wiring and aluminum nitride heat-conducting layers containing no internal wiring layer. ### Claim 11 (depends on 10) A semiconductor package according to claim 10, wherein the thickness of said aluminum nitride heat-conducting layers containing no internal wiring layer is greater than the thickness of said aluminum nitride wiring layer provided with said internal wiring. ### Claim 12 A semiconductor package comprising an aluminum nitride multilayer substrate having a semiconductor element mounted on one surface thereof and a signal wiring layer electrically connected to said semiconductor element, a multiplicity of connecting terminals electrically connected to said signal wiring layer and disposed as arranged after the fashion of a lattice on the other surface of said aluminum nitride multilayer substrate, said signal wiring layer being connected through via holes, and a surface signal wiring layer set in place on the one surface of said aluminum nitride multilayer substrate and an internal signal wiring layer set in place inside said aluminum nitride multilayer substrate, the length of said surface signal wiring layer being not more than 1/2 of the length of said signal wiring layer. ### Claim 13 (depends on 12) A semiconductor package according to claim 12, wherein said surface signal wiring layer is provided in one terminal part thereof with a connecting pad and-said via holes are disposed along the opposite sides of a row of said connecting pads. ### Claim 14 (depends on 12) A semiconductor package according to claim 12, wherein the length of said surface signal wiring layer is not more than 1/4 of the total length of all the signal wiring layers.