# US 5,703,387 A · Split gate memory cell with vertical floating gate

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- Number: US 5,703,387 A
- Document ID: US5703387A
- Status: Granted
- Kind: A
- Application number: 08/316,137
- Filed: 1994-09-30
- Granted: 1997-12-30
- Earliest claimed: 1994-09-30
- Assignees: United Microelectronics Corp.
- Inventors: Gary Hong
- Web page: https://patentgrep.com/patent/US5703387A

## CPC

- H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 69/00: Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A vertical split gate memory device has a semiconductor substrate with a trench and a floating gate formed on a sidewall of the trench, thus reducing the surface area of each memory cell. The fabrication process for this device allows precise control over the consistency during fabrication because the length of the floating gate is controlled by the depth of a trench etch and the location of the drains and sources are self-aligned by oxide spacers which act as masks during the doping process.

## Claims

### Claim 1

A split gate memory device, comprising:
a) a semiconductor substrate of a first conductivity type having a surface and a trench having a bottom surface, sidewalls, and top formed therein;
b) a first heavily doped region of semiconductor material formed in the substrate surface having a second conductivity type opposite to said first conductivity type;
c) a second heavily doped region of semiconductor material formed in said substrate at the bottom surface of said trench and having the second conductivity type, the second region configured to form part of a bitline, each of said first and second regions forming either one of a drain and a source;
d) a floating gate formed on a sidewall of the trench; and
e) a control gate formed generally perpendicular to the floating gate and above the substrate surface and above and across the top of the trench.

### Claim 2 (depends on 1)

The split gate memory device of claim 1, wherein the floating gate comprises doped polycrystalline silicon.

### Claim 3 (depends on 1)

The split gate memory device of claim 1, wherein the first and second heavily doped regions are each a source of dopant material.

### Claim 4 (depends on 1)

The split gate memory device of claim 1, wherein the first region in the substrate surface forms the source.

### Claim 5 (depends on 1)

The split gate memory device of claim 1, wherein the second region at the bottom surface of the trench forms the drain.

### Claim 6 (depends on 1)

The split gate memory device of claim 1, wherein the control gate forms part of a word line.

### Claim 7 (depends on 1)

The split gate memory device of claim 1, wherein the control gate comprises doped polycrystalline silicon, the floating gate comprises doped polycrystalline silicon, the semiconductor substrate comprises P-type silicon, and the first and second heavily doped regions comprise polycrystalline silicon doped with one of either As and POCl.sub.3.

### Claim 8 (depends on 1)

The split gate memory device of claim 1, wherein a dielectric layer is located directly below the control gate.

### Claim 9 (depends on 1)

The split gate memory device of claim 1, wherein an oxide layer is located above the semiconductor substrate surface and the trench.

### Claim 10 (depends on 1)

The split gate memory device of claim 1, further comprising a channel between the first and second heavily doped regions.

### Claim 11 (depends on 10)

The split gate memory device of claim 10, wherein the floating gate and the channel are generally perpendicular to each other.