# US 5,703,385 A · Power integrated circuit ("PIC") structure with a vertical IGBT

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- Number: US 5,703,385 A
- Document ID: US5703385A
- Status: Granted
- Kind: A
- Application number: 08/443,908
- Filed: 1995-05-17
- Granted: 1997-12-30
- Earliest claimed: 1994-05-19
- Assignees: Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno
- Inventors: Raffaele Zambrano
- Web page: https://patentgrep.com/patent/US5703385A

## CPC

- H10D 84/83: of only insulated-gate FETs [IGFET]
- H10D 84/839: {comprising VDMOS}
- H10D 84/83125: {the IGFETs characterised by having shared source or drain regions}
- Y10S 148/126: Power FETs
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS

## Abstract

A PIC structure includes a lightly doped semiconductor layer of the first conductivity type superimposed over a heavily doped semiconductor substrate of a second conductivity type, wherein a Vertical IGBT and a driving and control circuit including at least first conductivity type-channel MOSFETs are integrated. The MOSFETs are provided inside well regions of the second conductivity type which are included in at least one lightly doped region of the first conductivity type completely surrounded and isolated from the lightly doped layer of the first conductivity type by means of a respective isolated region of a second conductivity type.

## Claims

### Claim 1

A PIC structure comprising a lightly doped semiconductor layer of the first conductivity type superimposed over a heavily doped semiconductor substrate of a second conductivity type, wherein a Vertical IGBT and a driving and control circuit are integrated, the Vertical IGBT comprising a plurality of elementary cells, each elementary cell comprising at least heavily doped deep body regions of the second conductivity type and body regions of the second conductivity type extending from a top surface of the lightly doped layer thereinto, and the driving and control circuit comprising at least first conductivity type-channel MOSFETs formed inside well regions of the second conductivity type which are included in at lease one isolated lightly doped region of the first conductivity type completely surrounded and isolated from the lightly doped layer of the first conductivity type by means of a respective isolation region of a second conductivity type comprising a first, buried region of the second conductivity type, and a second, heavily doped annular region of the second conductivity type extending from a top surface of the lightly doped layer to said buried region, laterally delimiting said isolated lightly doped region of the first conductivity type, wherein said annular region and said deep body regions have substantially a same depth with respect to the top surface of the lightly doped semiconductor layer.

### Claim 2 (depends on 1)

The PIC structure according to claim 1, wherein said annular region and said deep body regions have a same doping profile.

### Claim 3 (depends on 1)

The PIC structure according to claim 1, wherein said annular region is merged with the deep body region of at least one elementary cell of the IGBT.

### Claim 4 (depends on 1)

The PIC structure according to claim 1, wherein a heavily doped semiconductor layer of the first conductivity type is interposed between the substrate and all portions of the lightly doped semiconductor layer laterally adjacent and opposing the substrate.

### Claim 5 (depends on 1)

The PIC structure according to claim 1, wherein a heavily doped semiconductor layer portion of the first conductivity type is interposed between the substrate and the lightly doped semiconductor layer, below the driving and control circuitry.

### Claim 6 (depends on 1)

The PIC structure according to claim 1, wherein heavily doped semiconductor layer portions of the first conductivity type are interposed between the substrate and the lightly doped semiconductor layer, respectively below the driving and control circuitry and below the IGBT.

### Claim 7 (depends on 1)

The PIC structure according to claim 1, wherein the well regions of the second conductivity type are in contact with said buried region.

### Claim 8 (depends on 7)

The PIC structure according to claim 7, wherein the well regions of the second conductivity type are deeper with respect to a top surface of the lightly doped semiconductor layer than said annular region and said deep body regions.

### Claim 9 (depends on 1)

The PIC structure according to claim 1, wherein said first conductivity type is the N type, and said second conductivity type is the P type.

### Claim 10 (depends on 1)

The PIC structure according to claim 1, wherein said first conductivity type is the P type, and said second conductivity type is the N type.

### Claim 11 (depends on 1)

The PIC structure according to claim 1, wherein one of the body regions of the second conductivity type is in contact with the heavily doped annular region.