# US 5,703,384 A · MOS semiconductor component having improved transmission properties

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- Number: US 5,703,384 A
- Document ID: US5703384A
- Status: Granted
- Kind: A
- Application number: 08/645,505
- Filed: 1996-05-14
- Granted: 1997-12-30
- Earliest claimed: 1995-06-19
- Assignees: Siemens Aktiengesellschaft
- Inventors: Heinrich Brunner
- Web page: https://patentgrep.com/patent/US5703384A

## CPC

- H10D 30/66: Vertical DMOS [VDMOS] FETs
- H10D 12/441: {Vertical IGBTs}
- H10D 12/461: {having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions}
- H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}
- H10D 30/668: {having trench gate electrodes, e.g. UMOS transistors}
- H10D 62/116: {adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

In IGBTs or, respectively, MOSFETs a parasitic junction-FET effect can be nearly avoided on the basis of an insulation layer introduced between the two base zones and into which an electrode is additionally embedded. The on-resistance is lowered as a result thereof. In an advantageous development, a potential activation of the parasitic bipolar structure (latch-up) can also be prevented.

## Claims

### Claim 1

An MOS semiconductor component, comprising:
a source zone of a first conductivity type, a base zone of a second conductivity type that are both connected in common to a source terminal, the source zone and the base zone having a common pn-junction;
a base zone of the first conductivity type that has a pn-junction with the base zone of the second conductivity type; and
a gate electrode that is separated from the base zone of the first conductivity type and from the base zone of the second conductivity type only by an oxide layer, the base zone of the first conductivity type being separated from the base zone of the second conductivity type by an insulating layer such that a junction between the base zones of the first and second conductivity types is present only in an immediate proximity of the oxide layer.

### Claim 2 (depends on 1)

The MOS semiconductor component according to claim 1, wherein an electrically conductive electrode is introduced into the insulating layer such that the electrically conductive electrode is insulated from all regions of the semiconductor.

### Claim 3 (depends on 2)

The MOS semiconductor component according to claim 2, wherein a source electrode directly adjoins the oxide layer and the electrically conductive electrode is separated from the source electrode only by the oxide layer.

### Claim 4 (depends on 1)

The MOS semiconductor component according to claim 1, wherein the junction between the base zone of the first conductivity type and the base zone of the second conductivity type proceeds in vertical direction with reference to a horizontal, principal surface of the MOS semiconductor component.

### Claim 5

An MOS semiconductor component, comprising:
a source zone of a first conductivity type, a base zone of a second conductivity type that are both connected in common to a source terminal, the source zone and the base zone having a common pn-junction;
a base zone of the first conductivity type that has a pn-junction with the base zone of the second conductivity type;
a gate electrode that is separated from the base zone of the first conductivity type and from the base zone of the second conductivity type only by an oxide layer, the base zone of the first conductivity type being separated from the base zone of the second conductivity type by an insulating layer such that a junction between the base zones of the first and second conductivity types is present only in an immediate proximity of the oxide layer;
an electrically conductive electrode in the insulating layer, the electrically conductive electrode being insulated from the source zone and the base zones.

### Claim 6 (depends on 5)

The MOS semiconductor component according to claim 5, wherein a source electrode directly adjoins the oxide layer and the electrically conductive electrode is separated from the source electrode only by the oxide layer.

### Claim 7 (depends on 5)

The MOS semiconductor component according to claim 5, wherein the junction between the base zone of the first conductivity type and the base zone of the second conductivity type proceeds in vertical direction with reference to a horizontal, principal surface of the MOS semiconductor component.

### Claim 8

An MOS semiconductor component, comprising:
a source zone of a first conductivity type, a base zone of a second conductivity type that are both connected in common to a source terminal, the source zone and the base zone having a common pn-junction;
a base zone of the first conductivity type that has a pn-junction with the base zone of the second conductivity type;
a gate electrode that is separated from the base zone of the first conductivity type and from the base zone of the second conductivity type only by an oxide layer, the base zone of the first conductivity type being separated from the base zone of the second conductivity type by an insulating layer such that a junction between the base zones of the first and second conductivity types is present only in an immediate proximity of the oxide layer;
an electrically conductive electrode in the insulating layer, the electrically conductive electrode being insulated from the source zone and the base zones; and
a source electrode directly adjoining the oxide layer and the electrically conductive electrode being separated from the source electrode only by the oxide layer.

### Claim 9 (depends on 8)

The MOS semiconductor component according to claim 8, wherein the junction between the base zone of the first conductivity type and the base zone of the second conductivity type proceeds in vertical direction with reference to a horizontal, principal surface of the MOS semiconductor component.