# US 5,703,363 A · Infrared to visible light image conversion device

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- Number: US 5,703,363 A
- Document ID: US5703363A
- Status: Granted
- Kind: A
- Application number: 08/638,006
- Filed: 1996-04-25
- Granted: 1997-12-30
- Earliest claimed: 1996-04-25
- Assignees: HE Holdings, Inc.
- Inventors: Robert S. Hayes
- Web page: https://patentgrep.com/patent/US5703363A

## CPC

- H01J 29/385: {Photocathodes comprising a layer which modified the wave length of impinging radiation}
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- H01J 31/505: {flat tubes, e.g. proximity focusing tubes}
- H10F 77/146: {Superlattices; Multiple quantum well structures}
- H10W 90/00: Package configurations
- H01J 2231/50026: Infrared
- H01J 2231/50063: Optical
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

An image conversion device (14) comprising a detector (38) for detecting an infrared image and an image converter (40) for converting the infrared image to a visible image. The detector (38) and the image converter (40) are disposed on a single substrate. The detector (38) includes an array of multiple quantum well detectors (38) formed of GaAs or GaAlAs. The image converter (40) includes an array of light emitting diodes formed of GaAsP deposited on the array of multiple quantum well detectors (38). A photoemissive surface (28) is formed on the array of light emitting diodes (40) and a phosphor screen (30) displays the visible image.

## Claims

### Claim 1

An image conversion device comprising:
first means disposed on a substrate for detecting an infrared image, said first means including an array of multiple quantum well detectors; and
second means disposed on said first means for converting the detected infrared image to a visible image, whereby said first means and said second means comprise a single monolithic assembly.

### Claim 2 (depends on 1)

The invention of claim 1 wherein the array of multiple quantum well detectors is formed of GaAs and GaAlAs.

### Claim 3 (depends on 2)

The invention of claim 2 wherein the converting means includes an array of light emitting diodes.

### Claim 4 (depends on 3)

The invention of claim 3 wherein the array of light emitting diodes is formed of GaAsP deposited on the array of multiple quantum well detectors.

### Claim 5 (depends on 4)

The invention of claim 4 further including a photoemissive surface formed on the array of light emitting diodes.

### Claim 6 (depends on 5)

The invention of claim 5 further including a phosphor screen to display the visible image.

### Claim 7 (depends on 6)

The invention of claim 6 further including an electron multiplier disposed between the photoemissive surface and the phosphor screen.

### Claim 8 (depends on 1)

The invention of claim 1 wherein the output of the first means is input directly to the second means.

### Claim 9

An image conversion device comprising:
a monolithic array including quantum well detectors for detecting an infrared image and light emitting diodes disposed on and in contact with said detectors for converting the detected infrared image to a visible image.

### Claim 10 (depends on 9)

The invention of claim 9 wherein the output of each detector is input directly to a light emitting diode.

### Claim 11

An image conversion system comprising:
means for receiving an infrared image;
means adjacent to the receiving means for detecting the infrared image, said detecting means including an array of multiple quantum well detectors;
means monolithic with the detecting means for converting the detected infrared image to a visible image; and
means adjacent to the converting means for transmitting the visible image.

### Claim 12

A method of fabricating an image conversion device, comprising the steps of:
depositing layers of GaAs and GaAlAs on a GaAs substrate to form quantum well detectors; and
depositing a layer of GaAsP on the layers of GaAs and GaAlAs to form light emitting diodes.

### Claim 13

An image conversion device comprising:
means disposed on a substrate for detecting an infrared image, the detecting means including an array of multiple quantum well detectors formed of GaAs and GaAlAs and
means disposed on said substrate for converting the detected infrared image to a visible image including an array of light emitting diodes formed of GaAsP deposited on the array of multiple quantum well detectors.

### Claim 14 (depends on 13)

The invention of claim 13 further including a photoemissive surface formed on the array of light emitting diodes.

### Claim 15 (depends on 14)

The invention of claim 14 further including a phosphor screen to display the visible image.

### Claim 16 (depends on 15)

The invention of claim 15 further including an electron multiplier disposed between the photoemissive surface and the phosphor screen.