# US 5,702,871 A · Liquid crystal display with low resistance electrode and method therefor

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- Number: US 5,702,871 A
- Document ID: US5702871A
- Status: Granted
- Kind: A
- Application number: 08/766,104
- Filed: 1996-12-16
- Granted: 1997-12-30
- Earliest claimed: 1993-10-23
- Assignees: Samsung Display Devices Co., Ltd.
- Inventors: Sung-lim Choi; Kwang-jin An
- Web page: https://patentgrep.com/patent/US5702871A

## CPC

- G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making}
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

The present invention relates to a super twisted nematic liquid crystal display capable of forming plating layers composed of Ni, Ni+Al or Ni, Ni+Au using electroless plating on both sides of the indium tin oxide electrode. The liquid crystal display with a low resistance electrode includes an indium tin oxide transparent electrode formed on a glass substrate at a predetermined distance from one another, and first and second metal layers formed on both sides of the ITO transparent electrode. As a result, line resistance by line voltage drop of the transparent electrode can be reduced to obtain the uniform picture quality.

## Claims

### Claim 1

A method for producing a liquid crystal display comprising the steps of:
depositing an indium tin oxide (ITO) layer on a glass substrate;
coating a photoresist on said ITO layer;
exposing a portion of the photoresist using a chromium mask;
developing the photoresist to remove one of either the exposed portion of the photoresist or unexposed portion of the photoresist so that a photoresist pattern is formed on the ITO layer;
forming the ITO layer to have the same pattern as the photoresist pattern by using an ITO etchant and thereby forming sides on the ITO layer protected by the photoresist pattern;
forming first and second metal layers on the sides of said ITO layer protected by the photoresist pattern by first and second electrodeless plating; and
removing the photoresist pattern.

### Claim 2 (depends on 1)

The method of claim 1, wherein said first electroless plating is carried out by using Ni and said second electroless plating is carried out by using Au.

### Claim 3 (depends on 1)

The method of claim 1 wherein said first metal layer comprises Ni and said second metal layer comprises metals and alloys selected from the group consisting of Al, Ni and Al, and Ni and Au.

### Claim 4 (depends on 3)

The method of claim 3, wherein said first metal layer is Ni and said second metal layer is Al and each are 0.05 to 3 micrometers thick.

### Claim 5 (depends on 1)

The method of claim 1, wherein said first and second metal layers are formed at least as thick as said ITO layer.

### Claim 6 (depends on 5)

The method of claim 5 wherein said first and second metal layers are formed to cover a corner of each of said etched surfaces of the remaining ITO layer.

### Claim 7

A method for producing a liquid crystal display comprising the steps of:
depositing an indium tin oxide (ITO) layer on a glass substrate;
applying a photoresist layer to said ITO glass substrate;
exposing said photoresist layer using a chromium mask to form a photoresist pattern;
developing the photoresist to expose a portion of the ITO layer;
etching the exposed portion of said ITO layer and thereby forming sides on the ITO layer;
forming first and second metal layers on the sides of the ITO layer by first and second electrodeless plating; and
removing said photoresist.

### Claim 8 (depends on 7)

The method of claim 7 wherein said first electroless plating is carried out by using Ni and said second electroless plating is carried out by using Au.

### Claim 9 (depends on 7)

The method of claim 7, wherein said first metal layer is Ni and said second metal layer is Al and each are 0.05 to 3 micrometers thick.

### Claim 10 (depends on 7)

The method of claim 7 wherein said first and second metal layers are formed at least as thick as said ITO layer.

### Claim 11 (depends on 10)

The method of claim 10 wherein said first and second metal layers are formed to cover a corner of each of said etched surfaces of the remaining ITO layer.

### Claim 12 (depends on 7)

The method of claim 7 wherein said first metal layer comprises Ni and said second metal layer comprises metals and alloys selected from the group consisting of Al, Ni and Al, and Ni and Au.