Mask for transferring a pattern for use in a semiconductor device and method of manufacturing the same
AssigneesMitsubishi Denki Kabushiki Kaisha, Ryoden Semiconductor System Engineering Corporation
InventorsHirofumi Sakata, Tadashi Nishioka
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Abstract
A mask for transferring a pattern in which durability can be improved and a very fine circuit pattern of a light-shielding film can be formed, and a manufacturing method thereof are obtained. In the mask for transferring a pattern, a silicon monocrystalline film 2, an aluminum monocrystalline film 3 and an aluminum oxide film 4 are formed on a mask substrate 1 so as to have a prescribed pattern feature. Silicon monocrystalline film 2 and aluminum monocrystalline film 3 serve as the light-shielding film. Aluminum oxide film 4 serves as an anti reflection and protection film.
Claims7
A method of manufacturing a mask for transferring a pattern, comprising the steps of:
- forming a semiconductor monocrystalline film on a main surface of a transparent substrate;
- terminating the main surface of said semiconductor monocrystalline film with hydrogen atoms;
- forming a pattern having prescribed feature of hydrogen atoms by replacing a portion of hydrogen atoms at the main surface of said semiconductor monocrystalline film with oxygen atoms;
- forming a metal monocrystalline film on said pattern of hydrogen atoms;
- and
- forming a metal oxide film on said metal monocrystalline film.
A method of manufacturing a mask for transferring a pattern, comprising the steps of:
- forming a semiconductor monocrystalline film on a main surface of a transparent substrate;
- terminating the main surface of said semiconductor monocrystalline film with hydrogen atoms;
- forming a pattern having prescribed feature of hydrogen atoms by replacing a portion of hydrogen atoms at the main surface of said semiconductor monocrystalline film with oxygen atoms;
- forming a metal monocrystalline film on said pattern of hydrogen atoms;
- forming a metal oxide film on said metal monocrystalline film;
- and
- forming an alloy solid solution film by thermally diffusing semiconductor atoms in said semiconductor monocrystalline film into said metal monocrystalline film by thermal treatment.
Dependencies are inferred from the claim text.