# US 5,702,847 A · Phase shift photomask, phase shift photomask blank, and process for fabricating them > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,702,847 A - Document ID: US5702847A - Status: Granted - Kind: A - Application number: 08/453,079 - Filed: 1995-05-30 - Granted: 1997-12-30 - Earliest claimed: 1992-09-01 - Assignees: Dai Nippon Printing Co., Ltd. - Inventors: Norihiro Tarumoto; Hiroyuki Miyashita; Yukio Iimura; Koichi Mikami - Web page: https://patentgrep.com/patent/US5702847A ## CPC - G03F 1/26: Phase shift masks [PSM]; PSM blanks; Preparation thereof - G03F 1/29: Rim PSM or outrigger PSM; Preparation thereof - G03F 1/30: Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof - G03F 1/32: Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract The invention relates to a phase shift photomask in which the peripheral region portion of a phase shift layer is removed by a relatively simple procedure and which has no or little defect and is inexpensive, a blank therefor, and a process for fabricating them. The process includes the steps of forming phase shift layer 23 all over the surface of one side of transparent substrate 21, and immersing only the peripheral region of substrate 21 in etching solution 25 to etch away the peripheral region of phase shift layer 23, whereby phase shift layer 27 is confined within an area smaller than that of substrate 21. ## Claims ### Claim 1 A phase shift photomask blank for projection exposure having at least a phase shift layer comprising spin-on glass on a transparent substrate wherein light which impinges on said photomask blank and passes through said phase shift layer is shifted in phase, characterized in that the peripheral region of the phase shift layer on the substrate is removed to confine the phase shift layer within an area smaller than that of the substrate. ### Claim 2 (depends on 1) A phase shift photomask blank according to claim 1, characterized in that the removal of the peripheral region of the phase shift film is achieved by etching. ### Claim 3 (depends on 1) A phase shift photomask blank according to claim 1, characterized in that the removal of the peripheral region of the phase shift film is achieved by providing a layer of material capable of repelling the phase shift layer on the peripheral region of the substrate. ### Claim 4 (depends on 1) A phase shift photomask blank according to claim 1, characterized in that the removal of the peripheral region of the phase shift film is achieved by providing a layer of material capable of lifting off the phase shift layer on the peripheral region of the substrate. ### Claim 5 A phase shift photomask having at least a phase shift pattern on a transparent substrate, characterized in that the peripheral region of the phase shift pattern area on the substrate is removed to confine the phase shift layer within an area smaller than that of the substrate. ### Claim 6 (depends on 5) A phase shift photomask according to claim 5, characterized in that the phase shift pattern is made up of spin-on glass. ### Claim 7 (depends on 5, 6) A phase shift photomask according to claim 5 or 6, characterized in that the removal of the peripheral region of the phase shift pattern area is achieved by etching. ### Claim 8 (depends on 5, 6) A phase shift photomask according to claim 5 or 6, characterized in that the removal of the peripheral region of the phase shift pattern area is achieved by providing, on the peripheral region of the substrate, a layer of material capable of repelling the phase shift layer. ### Claim 9 (depends on 5, 6) A phase shift photomask according to claim 5 or 6, characterized in that the removal of the peripheral region of the phase shift pattern area is achieved by providing, on the peripheral region of the substrate, a layer of material capable of lifting off the phase shift pattern area. ### Claim 10 A process for fabricating a phase shift photomask blank for projection exposure, characterized by: forming a phase shift layer comprising spin-on glass all over the surface of one side of a transparent substrate so that light which impinges on said photomask blank and passes through said phase shift layer is shifted in phase, and immersing only the peripheral region of the substrate in an etching solution to etch away the peripheral region of the phase shift layer, whereby the phase shift layer is confined within an area smaller than that of the substrate. ### Claim 11 (depends on 10) A process for fabricating a phase shift photomask blank according to claim 10, characterized in that the etching is done with the use of an alkaline etching solution. ### Claim 12 A process for fabricating a phase shift photomask, characterized by: forming a phase shift pattern all over the surface of one side of a transparent substrate, and immersing only the peripheral region of the substrate in an etching solution to etch away the peripheral region of the phase shift pattern, whereby the phase shift pattern is confined within an area smaller than that of the substrate. ### Claim 13 (depends on 12) A process for fabricating a phase shift photomask according to claim 12, characterized in that the etching is done with the use of an alkaline etching solution. ### Claim 14 A process for fabricating a phase shift photomask blank for projection exposure, characterized by including the step of providing a layer of material capable of repelling an overlying phase shift layer comprising spin-on glass on the peripheral region of a transparent substrate, whereby, when the overlying phase shift layer is provided so that light which impinges on said photomask blank and passes through said phase shift layer is shifted in phase, only the peripheral region of the phase shift layer is repelled by said layer of material for removal. ### Claim 15 (depends on 14) A process for fabricating a phase shift photomask blank according to claim 14, characterized in that the material provided on the peripheral region of the transparent substrate is a fluorocarbon resin. ### Claim 16 A process for fabricating a phase shift photomask, said process comprising the steps of: providing a layer of material on the peripheral region of a transparent substrate; providing a phase shift layer overlying said transparent substrate, wherein the material provided on the peripheral region of the transparent substrate repels formation of a phase shift pattern area so that a phase shift pattern area is not formed on the peripheral region of the transparent substrate. ### Claim 17 (depends on 16) A process for fabricating a phase shift photomask according to claim 16, characterized in that the material provided on the peripheral region of the transparent substrate is a fluorocarbon resin. ### Claim 18 A process for fabricating a phase shift mask blank for projection exposure, characterized by including the steps of providing a layer of material capable of lifting off an overlying phase shift layer comprising spin-on glass on the peripheral region of a transparent substrate, providing the overlying phase shift layer so that light which impinges on said phase shift mask blank and passes through said phase shift layer is shifted in phase, and lifting off the phase shift layer. ### Claim 19 (depends on 18) A process for fabricating a phase shift mask blank according to claim 18, characterized in that the lifting-off is done by heating. ### Claim 20 (depends on 19) A process for fabricating a phase shift mask blank according to claim 19, characterized in that the material capable of lifting off the overlying phase shift pattern area is a material that is solid at normal temperature or 25.degree. C., has a melting point of 150.degree. C. or lower, and is melted by heating at a suitable temperature. ### Claim 21 A process for fabricating a phase shift mask, comprising the steps of providing a layer of material capable of lifting off an overlying phase shift pattern area comprising spin-on glass on the peripheral region of a transparent substrate, providing the overlying phase shift pattern area, and lifting off the phase shift pattern area. ### Claim 22 (depends on 21) A process for fabricating a phase shift mask according to claim 21, characterized in that the lifting-off is done by heating. ### Claim 23 (depends on 22) A process for fabricating a phase shift mask according to claim 22, characterized in that the material capable of lifting off the overlying phase shift layer is a material that is solid at normal temperature or 25.degree. C., has a melting point of 150.degree. C. or lower, and is melted by heating at a suitable temperature.