# US 5,702,822 A · Method for producing single crystal, and needle-like single crystal > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,702,822 A - Document ID: US5702822A - Status: Granted - Kind: A - Application number: 08/424,109 - Filed: 1995-04-19 - Granted: 1997-12-30 - Earliest claimed: 1992-05-22 - Assignees: Denki Kagaku Kogyo Kabushiki Kaisha - Inventors: Yoshinori Terui; Ryuichi Terasaki - Web page: https://patentgrep.com/patent/US5702822A ## CPC - C30B 11/00: Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00) - C30B 11/12: Vaporous components, e.g. vapour-liquid-solid-growth - C30B 29/60: characterised by shape - Y10S 977/878: Shape/taper - Y10S 977/879: Material - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ## Abstract A method for producing a single crystal, which comprises (1) placing a metal layer as a pattern at a desired position on the surface of a single crystal substrate, (2) etching the surface of the single crystal substrate around the pattern, and (3) in a raw material gas atmosphere containing an element or elements constituting the single crystal, taking the element or elements in the metal layer at the pattern and permitting a needle-like single crystal to grow perpendicularly. ## Claims ### Claim 1 A substrate having at least one single crystal pin thereon, said substrate having a surface comprising: (1) a single crystal material or layer, said single crystal material or layer having been etched to a depth of from 1 to 100 microns around a desired metal pattern formed on the surface of said single crystal material or layer prior to etching and prior to forming a single crystal pin thereon, said single crystal material or layer having a thickness of at least 3 microns, said material or layer having a first surface on which said desired metal pattern was formed and a second surface lower than said first surface, said second surface being formed by etching said single crystal material or layer around said desired metal pattern to the depth of said second surface; (2) at least one etched tapered single crystal base portion extending from said first surface of said single crystal material or layer to said second surface, said tapered single crystal base portion being located at a position beneath said metal of said desired pattern, and having been formed by etching said single crystal material or layer at portions not protected by said metal; said tapered single crystal base portion having (i) a proximal end located at said second surface and (ii) a distal end located at said first surface, the diameter of the proximal end at said second surface being larger than the diameter (d) of said distal end at said first surface, such that said base portion is tapered in shape with its smaller diameter being at the first surface of said single crystal material or layer; and (3) a vertical single crystal pin which is in contact with and has been grown on and at the distal end of said tapered single crystal base portion at locations of said single crystal material or layer where said desired metal pattern was formed, said vertical pin having an end distal from the distal end of said tapered single crystal base portion, the axis of said vertical single crystal pin being perpendicular to said single crystal layer or forming an angle .theta. with a line perpendicular to said single crystal material or layer, said angle .theta. being not more than 20.degree.. ### Claim 2 (depends on 1) The substrate of claim 1, wherein said single crystal pin is a crystal selected from the group consisting of Si, LAB.sub.6, Ge, .alpha.-Al.sub.2 O.sub.3, GaAs, GaP, MgO, NiO and SiC. ### Claim 3 (depends on 1) The substrate of claim 1, wherein said single crystal pin is a crystal of Si or LAB.sub.6. ### Claim 4 (depends on 1) The substrate of claim 1, wherein said vertical single crystal pin has a diameter of from 1 to 300 microns and an aspect ratio of from 1 to 500. ### Claim 5 (depends on 1) The substrate of claim 1, further comprising: (4) an alloy portion in contact with said distal end of said vertical single crystal pin. ### Claim 6 (depends on 5) The substrate of claim 5, wherein said alloy comprises a metal selected from the group consisting of Au, Pt, Ag, Cu, Pd and Ga. ### Claim 7 (depends on 6) The substrate of claim 6, wherein said metal is selected from the group consisting of Au and Pt. ### Claim 8 (depends on 1) The substrate of claim 1, comprising a plurality of said single crystal pins, each in contact with and grown on a separate single crystal base portion wherein the distance between centers of said single crystal pins is at least 5 microns. ### Claim 9 (depends on 1) The substrate of claim 1, wherein said single crystal material or layer is an Si, LAB.sub.6, Ge, .alpha.-Al.sub.s O.sub.3, GaAs, GaP, MgO, NiO or SiC single crystal, and wherein said material or layer and said single crystal pin are made of the same material. ### Claim 10 (depends on 1) The substrate of claim 1, wherein said single crystal material or layer is an Si, LAB.sub.6, Ge, .alpha.-Al.sub.s O.sub.3, GaAs, GaP, MgO, NiO or SiC substrate, and wherein said single crystal material or layer, said single crystal base portion and said single crystal pin are made of the same material. ### Claim 11 (depends on 1) The substrate of claim 1, wherein said single crystal material or layer has been etched to a depth of from 2 to 50 microns. ### Claim 12 (depends on 1) The substrate of claim 1, wherein said single crystal material or layer has been etched to a depth of 2 to 20 microns. ### Claim 13 (depends on 1) The substrate of claim 1, wherein said single crystal material or layer has been etched to a depth of 10 to 20 microns.