# US 5,702,773 A · Method for preparing a fluoro-containing polyimide film

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- Number: US 5,702,773 A
- Document ID: US5702773A
- Status: Granted
- Kind: A
- Application number: 08/487,243
- Filed: 1995-06-13
- Granted: 1997-12-30
- Earliest claimed: 1994-06-13
- Assignees: NEC Corporation
- Inventors: Kazuhiko Endo
- Web page: https://patentgrep.com/patent/US5702773A

## CPC

- H10P 14/6539: {by exposure to corpuscular radiation, e.g. exposure to electrons, alpha-particles, protons or ions}
- B29C 59/14: by plasma treatment {(plasma tubes per se H01J)}
- C08J 7/123: {Treatment by wave energy or particle radiation (C08J7/18 takes precedence)}
- C08J 7/126: {Halogenation}
- H10P 14/687: {the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene}
- H10W 20/096: {by contacting with gases, liquids or plasmas}
- B29K 2079/08: {PI, i.e. polyimides or derivatives thereof}
- B29K 2995/0006: Dielectric
- C08J 2379/08: Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- H10P 14/6342: {Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating}
- H10P 14/683: {carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC}
- Y10T 428/31681: Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
- Y10T 428/31721: Of polyimide
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B29C: SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING (making preforms B29B11/00; making laminated products by combining previously unconnected layers which become one product whose layers will remain together B32B37/00 - B32B41/00)
- C08J: WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H (working, e.g. shaping, of plastics B29)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- B29K: INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR {MOULDS, } REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method for blending fluorine into a polyimide free of fluorine comprises the steps of generating fluorine radicals in a fluorine based gas, removal of any charge particles from the gas to leave the fluorine radicals in the gas, and exposing a polyimide free of fluorine to an irradiation of the fluorine radicals so that the irradiated fluorine radicals penetrate into an inside of the polyimide without showing any reaction to the removed charge particles on a surface of the polyimide.

## Claims

### Claim 1

A method for blending fluorine into a polyimide free of fluorine comprising the steps of:
generating fluorine radicals in a fluorine based gas;
removal of any charge particles from said gas to leave said fluorine radicals in said gas; and
exposing a polyimide free of fluorine to an irradiation of said fluorine radicals so that said irradiated fluorine radicals penetrate into said polyimide without any reaction between said irradiated fluorine radicals and said removed charge particles on a surface of said polyimide.

### Claim 2 (depends on 1)

The method as claimed in claim 1, wherein said polyimide has at least a temperature being sufficiently high for facilitating a thermal diffusion of said fluorine radicals into a deep region of said polyimide.

### Claim 3 (depends on 2)

The method as claimed in claim 2, wherein said temperature is set in the range from 100.degree. C. to 300.degree. C.

### Claim 4 (depends on 1)

The method as claimed in claim 1, wherein said fluorine radicals are generated in a plasma gas by a glow discharge of said fluorine based gas in a vacuum.

### Claim 5 (depends on 1)

The method as claimed in claim 1, wherein said fluorine radicals are generated by a dissociation of said fluorine based gas where said dissociation is caused by irradiation of said fluorine based gas onto a tungsten heater in vacuum.

### Claim 6 (depends on 1)

The method as claimed in claim 1, wherein said removal of any charge particles from said gas is carried out by having said gas including said any charge particles, said fluorine radicals and said neutral particles pass through a control grid applied with a predetermined voltage.

### Claim 7 (depends on 6)

The method as claimed in claim 6, wherein said predetermined voltage is in the range from 100 to 300 V.

### Claim 8 (depends on 1)

The method as claimed in claim 1, wherein said fluorine based gas is selected from the group consisting of CF.sub.4, F.sub.2, SF.sub.6, C.sub.2 F.sub.4, NF.sub.3 and C.sub.2 F.sub.6.