# US 5,702,531 A · Apparatus for forming a thin film

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- Number: US 5,702,531 A
- Document ID: US5702531A
- Status: Granted
- Kind: A
- Application number: 08/467,525
- Filed: 1995-06-06
- Granted: 1997-12-30
- Earliest claimed: 1993-05-10
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Yuuichi Mikata
- Web page: https://patentgrep.com/patent/US5702531A

## CPC

- C23C 16/463: {Cooling of the substrate}
- C23C 16/24: Deposition of silicon only
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A plurality of wafers are placed on a boat, and the boat is inserted into a reactor. The reactor is heated by a heater, thereby heating the inserted wafers. Then, air is supplied between the reactor and the heater through the fan nozzles of a fan unit, thereby cooling the heater quickly at a rate of 17.degree. C./min. PH.sub.3 and SiH.sub.4 gases are introduced into the reactor through first and second gas nozzles, only while the average temperature of a peripheral portion of each wafer remains 30.degree. C. lower than that of a central portion of the same. Thereafter, when the temperature difference between the peripheral and central portions has become lower than 30.degree. C., the supply of PH.sub.3 and SiH.sub.4 gases is stopped. Thus, a polycrystal silicon film is formed on each wafer.

## Claims

### Claim 1

An apparatus for forming a thin film, comprising:
a reactor for containing a tube inside of which a boat is placed;
a plurality of semiconductor substrates contained in the boat, said semiconductor substrates being arranged parallel to one another at regular intervals;
gas introducing means for introducing gases into the reactor;
heating means provided outside the reactor for heating the reactor;
cooling means for cooling the reactor; and
control means for controlling the gas introducing means, the cooling means, and the heating means;
wherein the gases are introduced into a space between the tube and the boat, and the cooling means has a nozzle tip beneath a space between the heating means and the reactor to provide fan cooling air flow between the heating means and the reactor from bottom to top.

### Claim 2 (depends on 1)

The apparatus according to claim 1, wherein the control means comprises temperature-increase control means for causing the heating means to heat the semiconductor substrates to a first temperature;
temperature-decrease control means for causing the cooling means to cool the semiconductor substrates to a second temperature; and
gas introduction control means for causing the gas introducing means to introduce predetermined gases only while there remains a predetermined difference in average temperature between peripheral and central portions of each of the semiconductor substrates.

### Claim 3 (depends on 1)

The apparatus according to claim 1, wherein the control means comprises temperature-increase control means for causing the heating means to heat the semiconductor substrates to 650.degree. C.;
temperature-decrease control means for causing the cooling means to cool the semiconductor substrates to 550.degree. C.; and
gas introduction control means for causing the gas introducing means to introduce predetermined gases only while there remains a difference of 30.degree. C. in average temperature of a peripheral portion of each of the semiconductor substrates and that of a central portion thereof.

### Claim 4 (depends on 1)

The apparatus according to claim 1, further comprising holding means for holding the semiconductor substrates at regular intervals.

### Claim 5 (depends on 1)

The apparatus according to claim 1, wherein the cooling means is a fan unit for supplying air between the heating means and the reactor.

### Claim 6

An apparatus for forming a thin film, comprising:
holding means for holding semiconductor substrates at regular intervals;
a reactor containing the holding means;
gas introducing means for introducing gases into the reactor;
heating means provided outside the reactor for heating the reactor;
cooling means for cooling the reactor;
temperature-increase control means for causing the heating means to heat the semiconductor substrates to a first temperature;
temperature-decrease control means for causing the cooling means to cool the semiconductor substrates to a second temperature; and
gas introduction control means for causing the gas introducing means to introduce predetermined gases only while there remains a predetermined difference in average temperature between peripheral and central portions of each of the semiconductor substrates.