# US 5,702,529 A · Method of making doped semiconductor film having uniform impurity concentration on semiconductor substrate and apparatus for making the same

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- Number: US 5,702,529 A
- Document ID: US5702529A
- Status: Granted
- Kind: A
- Application number: 08/467,127
- Filed: 1995-06-06
- Granted: 1997-12-30
- Earliest claimed: 1990-06-26
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Yuuichi Mikata; Katsunori Ishihara; Katsuya Okumura
- Web page: https://patentgrep.com/patent/US5702529A

## CPC

- C23C 16/45523: {Pulsed gas flow or change of composition over time}
- C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species
- H10P 32/302: {Doping polycrystalline silicon or amorphous silicon layers}
- H10W 20/031: {of conductive parts of the interconnections}
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/3442: {N-type}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

For providing a doped semiconductor film having a uniform thickness and a uniform impurity concentration on a semiconductor substrate, both a raw gas such as silane and an impurity gas such as phosphine are prepared. Thereafter, the raw gas is introduced into a reaction chamber, while a decomposed impurity gas, that is obtained by means for decomposing the impurity gas, is introduced into the reaction chamber, thereby depositing a doped semiconductor film such as a polysilicon film on the semiconductor substrate. A sub-reaction chamber, a plasma discharge device and a light source are used as the means for decomposing the impurity gas.

## Claims

### Claim 1

An apparatus for depositing a doped semiconductor film on a plurality of semiconductor substrates, comprising:
a reaction chamber kept at a reduced pressure, said reaction chamber including a heater for thermally decomposing a raw gas, means for decomposing an impurity gas, said semiconductor substrates being arranged at a constant pitch such that top surfaces of said semiconductor substrates face in a first direction and bottom surfaces of said semiconductor substrates face in an opposite direction;
a first pipe for introducing said raw gas into said reaction chamber;
a second pipe for introducing said impurity gas into said reaction chamber;
a first valve which is opened/closed and connected to a middle portion of said first pipe, said first valve being opened to permit said raw gas to be introduced into said reaction chamber, said first valve being closed to prevent said raw gas from being introduced into said reaction chamber;
a second valve which is opened/closed and connected to a middle portion of said second pipe, said second valve being opened to permit said impunity gas into said reaction chamber, said second valve being closed to prevent said impurity gas from being introduced into said reaction chamber; and
means for controlling opening/closing of said first and second valves, thereby repeating an operation for introducing said raw gas into said reaction chamber through said first pipe to deposit a semiconductor film on said semiconductor substrates, and then introducing only said impurity gas into said reaction chamber through said second pipe to add impurities to said semiconductor film.

### Claim 2 (depends on 1)

The apparatus according to claim 1, wherein said means for decomposing an impurity gas is comprised of a plasma discharge means.

### Claim 3 (depends on 2)

The apparatus according to claim 2, wherein said plasma discharge means has a pair of discharge electrodes arranged in an inner wall of said reaction chamber.

### Claim 4 (depends on 1)

The apparatus according to claim 1, wherein said means for decomposing an impurity gas is comprised of a radiant light source.