# US 5,702,290 A · Block for polishing a wafer during manufacture of integrated circuits > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,702,290 A - Document ID: US5702290A - Status: Granted - Kind: A - Application number: 08/631,289 - Filed: 1996-04-08 - Granted: 1997-12-30 - Earliest claimed: 1994-08-08 - Inventors: Michael A. Leach - Web page: https://patentgrep.com/patent/US5702290A ## CPC - B24B 37/11: Lapping tools - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ## Abstract A number of blocks are reciprocably supported in a polishing apparatus in accordance with this invention, entirely independent of each other so that lifting motion of one block is not transferred to an adjacent block, thus providing flexibility to follow the global curvature of the wafer. The polishing apparatus uses a block of a very hard design to ensure minimal deflection of the block into the microstructure of the wafer. Each block removes a portion of the wafer using relative motion between the block and the wafer. Each block is supported by at least three regions of the wafer during the relative motion, wherein each of the regions has the slowest rate of material removal in a die enclosing that region. In one embodiment, the smallest dimension of a block is approximately three times the size of the side of a die. The three point support and hard design of the blocks ensure local polishing removal uniformity while the independent support of the blocks ensures global uniformity, thus achieving an advantage over the conventional polishing process and apparatus. ## Claims ### Claim 1 A block for removing a portion of a wafer using relative motion between said block and said wafer, said wafer having a plurality of photolithographic images, each of said photolithographic images comprising a plurality of protrusions, and said block has an eroding surface for eroding said portion of said wafer, wherein: said eroding surface has a modulus of elasticity between approximately 10 million psi and approximately 500,000 psi at each point of said eroding surface, and said eroding surface has an area between a maximum area and a minimum area, said minimum area being larger than an area of said photolithographic image and said maximum area being the largest possible area for said eroding surface to remain in contact with all protrusions of said wafer covered by said eroding surface prior to said relative motion. ### Claim 2 (depends on 1) The block of claim 1, wherein each of said photolithographic images has a slow-polishing region of the slowest rate of material removal in said photolithographic image and said slow-polishing region includes a protrusion having a top surface and wherein: said eroding surface has an area necessary for said block to remain in complete contact with the entirety of said top surface of each protrusion in three of said slow-polishing regions. ### Claim 3 A block for removing a portion of a wafer using relative motion between said block and said wafer, wherein said wafer has a plurality of photolithographic images formed on a surface of said wafer, each of said photolithographic images comprising a slow-polishing region having the slowest rate of material removal in said photolithographic image, wherein said block has an eroding surface for eroding said wafer, said eroding surface having an area between a maximum area and a minimum area, wherein the smallest dimension of said minimum area is greater than twice the largest side of a triangle, said triangle being the largest possible triangle having a slow-polishing region at each corner such that said triangle excludes all slow-polishing regions on said wafer other than said slow-polishing regions at said corners, and said minimum area being larger than an area of a photolithographic image, and wherein the maximum area is the largest area possible for said eroding surface such that a curvature of said eroding surface deviates from a curvature of said wafer surface by a predetermined amount. ### Claim 4 (depends on 3) The block of claim 3 wherein said eroding surface has a modulus of elasticity between approximately 10 million psi and approximately 500,000 psi at all points in said eroding surface. ### Claim 5 A block for polishing a wafer using relative motion between said block and said wafer, said wafer having a plurality of photolithographic images to be polished, wherein said block has an eroding surface for polishing said photolithographic images, said eroding surface having an area, said area being: larger than an area of one of said photolithographic images; and smaller than an area of said wafer. ### Claim 6 (depends on 5) The block of claim 5 wherein said area of said eroding surface is a multiple of said area of said photolithographic image. ### Claim 7 (depends on 6) The block of claim 6 wherein said multiple is approximately three. ### Claim 8 (depends on 7) The block of claim 7 wherein said eroding surface has a modulus of elasticity between approximately 10 million psi and approximately 500,000 psi at all points of said eroding surface. ### Claim 9 (depends on 6) The block of claim 6 wherein said multiple is approximately four. ### Claim 10 (depends on 6) The block of claim 6 wherein said multiple is approximately six. ### Claim 11 (depends on 5) The block of claim 5 wherein: each photolithographic image has at least one slow-polishing region of the slowest rate of material removal within said photolithographic image; and said area is greater than or equal to the smallest area necessary for said block to maintain contact with at least three of said slow-polishing regions during relative motion of said block within an area covered by said wafer. ### Claim 12 (depends on 5) The block of claim 5 wherein each of said photolithographic images has a plurality of protrusions and said area of said eroding surface is the largest possible area for said eroding surface to remain in contact with all protrusions of said wafer covered by said eroding surface prior to said relative motion. ### Claim 13 (depends on 5) The block of claim 5 wherein said eroding surface has a modulus of elasticity between approximately 10 million psi and approximately 500,000 psi at all points of said eroding surface. ### Claim 14 (depends on 5) The block of claim 5 wherein said eroding surface is circular. ### Claim 15 (depends on 5) The block of claim 5 wherein said eroding surface is rectangular. ### Claim 16 (depends on 5) The block of claim 5 wherein said eroding surface is square. ### Claim 17 (depends on 5) The block of claim 5 wherein said eroding surface is oval.