Wafer metrology pattern integrating both overlay and critical dimension features for SEM or AFM measurements

A wafer metrology pattern for use in critical dimension analysis of high density memory cell configuration comprising:

• a first central section for providing a central reference point;
• a first section positioned concentrically around said central section, said first section being generally L-shaped;
• a second section positioned concentrically around said central section, said second section being generally rectangularly shaped;
• a third section positioned concentrically around said central section, said third section being generally rectangularly shaped;
• and
• a plurality of compensating lines positioned radially about at least two of said first section, said second section and said third section.

A wafer metrology pattern for use in critical dimension analysis of high density memory cell configuration that combines overlay and critical dimension features comprising:

• a first central section for providing a central reference point;
• a first section positioned concentrically around said central section, said first section being generally L-shaped having a fixed width of said rectangular shape is sufficient to provide adequate space for said critical dimension analysis;
• a second section positioned concentrically around said central section, said second section being generally rectangularly shaped having a fixed width of said rectangular shape is sufficient to provide adequate space for said critical dimension analysis;
• a third section positioned concentrically around said central section, said third section being generally rectangularly shaped having a fixed width of said rectangular shape is sufficient to provide adequate space for said critical dimension analysis;
• and
• a plurality of compensating lines positioned radially about at least two of said first section, said second section and said third section, one of said plurality of compensating lines having a fixed width of said rectangular shape is sufficient to provide adequate space for said critical dimension analysis and another of said plurality of compensating lines having a fixed width of said rectangular shape is sufficient to provide adequate space for said critical dimension analysis.