# US 5,700,604 A · Charged particle beam exposure method and mask employed therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,700,604 A - Document ID: US5700604A - Status: Granted - Kind: A - Application number: 08/607,315 - Filed: 1996-02-26 - Granted: 1997-12-23 - Earliest claimed: 1995-03-01 - Assignees: Nikon Corporation - Inventors: Teruaki Okino - Web page: https://patentgrep.com/patent/US5700604A ## CPC - G03F 1/20: Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 40/00: Manufacture or treatment of nanostructures - G03F 7/2037: {Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation} - H01J 37/3174: {Particle-beam lithography, e.g. electron beam lithography} - H01J 2237/31771: using multiple exposure - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A charged particle beam exposure method capable of suppressing the degradation of dimensional accuracy of exposed pattern elements due to the proximity effect and Coulomb effect defocusing. The charged particle beam exposure method is a method in which a charged particle beam is irradiated to a mask to transfer an image of a pattern formed on the mask onto a radiation-sensitive substrate. The method includes dividing one exposed pattern element which is to be formed on the radiation-sensitive substrate into a plurality of regions including a region lying at a marginal portion of the exposed pattern element and at least one other region lying inside the marginal portion, and forming patterns respectively corresponding to the regions on the mask, and further adjusting, when the patterns are to be transferred onto the radiation-sensitive substrate, the transfer positions of images of the patterns corresponding to the regions so that the divided regions are combined together to form the exposed pattern element on the radiation-sensitive substrate. ## Claims ### Claim 1 A charged particle beam exposure method in which a charged particle beam is irradiated to a mask to transfer an image of a pattern formed on the mask onto a radiation-sensitive substrate, said method comprising: dividing one exposed pattern element which is to be formed on said radiation-sensitive substrate into a plurality of regions including a peripheral region lying at a marginal portion of the exposed pattern element and at least one inner region lying inside said peripheral region, and forming a plurality of patterns respectively corresponding to said regions on said mask; and adjusting, when the patterns are to be transferred onto said radiation-sensitive substrate, transfer positions of images of the patterns corresponding to said regions so that said regions are combined together to form said one exposed pattern element on said radiation-sensitive substrate. ### Claim 2 (depends on 1) A charged particle beam exposure method according to claim 1, wherein a dose of charged particle beam irradiated per unit area of said radiation-sensitive substrate in a step of transferring an image of the pattern corresponding to said peripheral region of said exposed pattern element differs from that in a step of transferring an image of the pattern corresponding to said at least one inner region of said exposed pattern element. ### Claim 3 (depends on 2) A charged particle beam exposure method according to claim 2, wherein the dose of charged particle beam irradiated per unit area of said rasuation-sensitive substrate in the step of transferring an image of the pattern corresponding to said at least one inner region of said exposed pattern element is smaller than that in the step of transferring an image of the pattern corresponding to said peripheral region of said exposed pattern element. ### Claim 4 (depends on 1) A charged particle beam exposure method according to claim 1, wherein a width of said peripheral region is varied on the basis of a size of said exposed pattern element obtained by combining together said peripheral region and said at least one inner region so that, when the size of said exposed pattern element is larger than a predetermined value, the width of said peripheral region is relatively large, whereas, when the size of said exposed pattern element is smaller than a predetermined value, the width of said peripheral region is relatively small. ### Claim 5 (depends on 1) A charged particle beam exposure method according to claim 1, wherein said patterns are formed on different masks, respectively. ### Claim 6 (depends on 1) A charged particle beam exposure method according to claim 1, wherein said patterns are formed in different regions, respectively, on a single mask. ### Claim 7 A mask which is capable of forming a charged particle beam irradiated thereto into a shape corresponding to an exposed pattern element to be formed on a radiation-sensitive substrate, said mask comprising: a peripheral pattern for exposing a marginal portion of one exposed pattern element to be formed on said radiation-sensitive substrate; and at least one inner pattern for exposing a region inside said marginal portion of said one exposed pattern element. ### Claim 8 (depends on 7) A mask according to claim 7, wherein a width of said peripheral pattern is varied on the basis of a size of said exposed pattern element obtained by combining together an image of said peripheral pattern for exposing the marginal portion of said exposed pattern element and an image of said at least one inner pattern so that, when the size of said exposed pattern element is larger than a predetermined value, the width of said peripheral pattern is relatively large, whereas, when the size of said exposed pattern element is smaller than a predetermined value, the width of said peripheral pattern is relatively small. ### Claim 9 (depends on 7) A mask according to claim 7, including a base member which transmits said particle beam, and a membrane attached to said base member to define said patterns, said membrane being formed of a material which does not transmit or scatter said particle beam. ### Claim 10 (depends on 7) A mask according to claim 7, including a base member made of a material which does not transmit or scatter said particle beam, said patterns being cut out in said base member to transmit said particle beam. ### Claim 11 A charged particle beam exposure method in which a charged particle beam is irradiated to a mask to transfer an image of a pattern formed on the mask onto a radiation-sensitive substrate including: a first step of irradiating the charged particle beam to a first mask having a first mask pattern formed thereon, said first mask pattern corresponding to a peripheral portion of a predetermined region to be exposed on said radiation-sensitive substrate; and a second step of irradiating a charged particle beam having an energy greater than that of the charged particle beam irradiated in said first step to a second mask having a second mask pattern formed thereon, said second mask pattern corresponding to an inner portion lying inside said peripheral portion of said predetermined region, whereby, said predetermined region on said radiation-sensitive substrate is exposed through said first and second steps. ### Claim 12 (depends on 11) A charged particle beam exposure method according to claim 11, wherein the width of said first mask pattern corresponding to a peripheral region of said predetermined region to be exposed on said radiation-sensitive substrate is determined by the size of said predetermined region. ### Claim 13 A charged particle beam exposure method in which a charged particle beam is irradiated to a mask to transfer an image of a pattern formed on the mask onto a radiation-sensitive substrate including: a first step of irradiating the charged particle beam to a first mask pattern formed on said mask and corresponding to a peripheral portion of a predetermined region to be exposed on said radiation-sensitive substrate; and a second step of irradiating a charged particle beam having an energy greater than that of the charged particle beam irradiated in said first step to a second mask pattern formed on said mask at a position which is different from the position at which said first mask pattern is formed and corresponding to an inner portion lying inside said peripheral portion of said predetermined region, whereby, said predetermined region on said radiation-sensitive substrate is exposed through said first and second steps. ### Claim 14 (depends on 13) A charged particle beam exposure method according to claim 13, wherein the width of said first mask pattern corresponding to a peripheral region of said predetermined region to be exposed on said radiation-sensitive substrate is determined by the size of said predetermined region.