# US 5,700,588 A · Magnetoresistance effect element

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- Number: US 5,700,588 A
- Document ID: US5700588A
- Status: Granted
- Kind: A
- Application number: 08/613,170
- Filed: 1996-03-08
- Granted: 1997-12-23
- Earliest claimed: 1991-03-29
- Assignees: Kabushiki Kaisha Toshiba
- Inventors: Yoshiaki Saito; Shiho Okuno; Koichiro Inomata
- Web page: https://patentgrep.com/patent/US5700588A

## CPC

- H10N 50/85: Materials of the active region
- B82Y 25/00: Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
- G01R 33/093: {using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00)}
- Y10S 428/928: Magnetic property
- Y10T 428/12465: having magnetic properties, or preformed fiber orientation coordinate with shape
- Y10T 428/12632: Four or more distinct components with alternate recurrence of each type component
- Y10T 428/12875: Platinum group metal-base component
- Y10T 428/12896: Ag-base component
- Y10T 428/1291: Next to Co-, Cu-, or Ni-base component
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)
- Y10S: TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers. The magnetic layers containing three magnetic elements of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.

## Claims

### Claim 1

A magnetoresistance effect element comprising a multilayer formed by alternatively stacking at least two magnetic layers and at least one non-magnetic layer in a manner to produce a magnetoresistance effect, said magnetic layers consisting essentially of an alloy of the formula:
(Fe.sub.1-x Co.sub.x).sub.y Ni.sub.1-y
wherein 0<x<1 and 0<Y<1 and having a thickness of from 2 to 50 .ANG., said non-magnetic layer consisting essentially of Cu and alloys of Cu, said non-magnetic layer having a thickness of from 2 to 100 .ANG..