# US 5,700,526 A · Insulator deposition using focused ion beam > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 5,700,526 A - Document ID: US5700526A - Status: Granted - Kind: A - Application number: 08/434,548 - Filed: 1995-05-04 - Granted: 1997-12-23 - Earliest claimed: 1995-05-04 - Assignees: Schlumberger Technologies, Inc. - Inventors: Hongyu Ximen; Michael A. Cecere; Douglas Masnaghetti - Web page: https://patentgrep.com/patent/US5700526A ## CPC - H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC} - C23C 16/047: {using irradiation by energy or particles} - C23C 16/402: {Silicon dioxide} - H10P 14/6686: {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane} - H10W 20/067: {by modifying the pattern of conductive parts} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Methods are provided for depositing insulator material at a pre-defined area of an integrated circuit (IC) by: placing an IC in a vacuum chamber; applying to a localized surface region of the integrated circuit at which insulator material is to be deposited a first gas containing molecules of a dissociable compound comprising atoms of silicon and oxygen and a second gas containing molecules of a compound which reacts with metal ions; generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. The dissociable compound comprises atoms of carbon and hydrogen, such as di-t-butoxydiacetoxy-silane. The compound which reacts with metal ions may be carbon tetrabromide or ammonium carbonate. ## Claims ### Claim 1 A method of depositing material on an integrated circuit, comprising: a. placing an integrated circuit in a vacuum chamber, b. applying to a localized surface region of the integrated circuit at which insulator material is to be deposited, a first gas containing molecules of a dissociable compound comprising atoms of silicon and oxygen and a second gas containing molecules of a compound which reacts with metal ions; c. generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and d. directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. ### Claim 2 (depends on 1) The method of claim 1, wherein the dissociable compound further comprises atoms of carbon and hydrogen. ### Claim 3 (depends on 1) The method of claim 1, wherein the compound which reacts with metal ions comprises a halide. ### Claim 4 (depends on 3) The method of claim 3, wherein the halide comprises carbon tetrabromide (CBr.sub.4). ### Claim 5 (depends on 1) The method of claim 1, further comprising the step of baking the integrated circuit at a temperature in excess of 25.degree. C. ### Claim 6 (depends on 1) The method of claim 1, wherein the metal ions have an energy in the range of 5 kev to 40 kev. ### Claim 7 (depends on 1) The method of claim 1, wherein the focused ion beam is generated from a liquid metal ion source of Gallium ions. ### Claim 8 A method of depositing material on an integrated circuit, comprising: a. placing an integrated circuit in a vacuum chamber, b. applying to a localized surface region of the integrated circuit at which insulator material is to be deposited, a first gas containing molecules of di-t-butoxydiacetoxy-silane (DBTS) and a second gas containing molecules of a compound which reacts with metal ions; c. generating a focused ion beam having metal ions of sufficient energy to dissociate molecules of the first gas; and d. directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen. ### Claim 9 (depends on 8) The method of claim 8, wherein the compound which reacts with metal ions comprises one of carbon tetrabromide (CBr.sub.4) or ammonium carbonate ((NH.sub.3).sub.2 CO.sub.3). ### Claim 10 (depends on 8) The method of claim 8, wherein the compound which reacts with metal ions comprises ammonium carbonate (NH.sub.3).sub.2 CO.sub.3) and wherein the focused ion beam is scanned over the localized surface region at an average beam-current density of about 1 pA/.mu.m.sup.2 to about 15 pA/.mu.m.sup.2. ### Claim 11 (depends on 10) The method of claim 10, wherein the total gas pressure in the vacuum chamber of the first gas and the second gas is between about 1.5.times.10.sup.5 Torr and about 3.5.times.10.sup.-5 Torr. ### Claim 12 (depends on 11) The method of claim 11, wherein the gas partial-pressure ratio of the first gas to the second gas is between about 2:3 and about 3:2. ### Claim 13 (depends on 11) The method of claim 11, wherein the gas partial-pressure ratio of the first gas to the second gas is 1:1. ### Claim 14 A method of depositing material on an integrated circuit, comprising: a. placing an integrated circuit in a vacuum chamber, b. applying to a localized surface region of the integrated circuit at which insulator material is to be deposited, a first gas containing molecules of di-t-butoxydiacetoxy-silane (DBTS) and a second gas containing molecules of carbon tetrabromide (CBr.sub.4), wherein the gas partial-pressure ratio of carbon tetrabromide to di-t-butoxydiacetoxy-silane is between about 1:1 and about 1:2; c. generating a focused ion beam having metal ions of energy between about 5 kev and about 40 kev; and d. directing the focused ion beam at the localized surface region to dissociate at least some of the molecules of the first gas and to thereby deposit on at least a portion of the localized surface region a material containing atoms of silicon and oxygen.