# US 5,700,520 A · Low temperature, high pressure silicon deposition method

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- Number: US 5,700,520 A
- Document ID: US5700520A
- Status: Granted
- Kind: A
- Application number: 08/668,025
- Filed: 1996-06-19
- Granted: 1997-12-23
- Earliest claimed: 1991-01-06
- Assignees: Applied Materials, Inc.
- Inventors: Israel Beinglass; David K. Carlson
- Web page: https://patentgrep.com/patent/US5700520A

## CPC

- C23C 16/24: Deposition of silicon only
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.

## Claims

### Claim 1

A thermal chemical vapor deposition method of depositing a layer comprising doped or undoped amorphous silicon and mixtures thereof with polycrystalline silicon comprising:
a) loading a substrate into a chemical vapor deposition vacuum chamber;
b) controlling the temperature of the substrate to between about 600.degree. and about 690.degree. C.; and
c) adding a silane selected from the group consisting of monosilane, disilane, monosilane mixed with a dopant gas and disilane mixed with a dopant gas, to the chamber and maintaining the pressure of the chamber between about 10 and 350 Torr until the silicon layer is deposited on the substrate.

### Claim 2 (depends on 1)

A method according to claim 1 wherein the pressure is maintained at between about 25 and 190 Torr.

### Claim 3 (depends on 1)

A method according to claim 1 wherein the gas and temperature are controlled to produce undoped amorphous silicon.

### Claim 4 (depends on 1)

A method according to claim 1 wherein the gas and temperature are controlled to produce a mixture of amorphous and polycrystalline silicon.

### Claim 5 (depends on 1)

A method according to claim 1 wherein the gas and temperature are controlled to produce doped amorphous silicon.

### Claim 6 (depends on 1)

A method according to claim 1 wherein the gas and temperature are controlled to produce a mixture of doped amorphous and doped polycrystalline silicon.

### Claim 7 (depends on 1)

A method according to claim 1 wherein the pressure is maintained at from about 25-150 Torr.

### Claim 8 (depends on 1)

A method according to claim 1 wherein said silane is monosilane.