Electrostatically operated micromechanical capacitor
AssigneeHoneywell Inc.
InventorPaul E. Bauhahn
Life of this patent
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Abstract
An electrostatically controlled, micromachined micromechanical capacitor having an adjustable, extensive tuning range. A configuration consists of a set of various sized beams or plates adjacent to a common plate or plates. The pairs of plates are linearly moved relative to each other to provide an adjustable capacitance. The movement of the plates is caused electrostatically by an application of a DC or low frequency voltage to the respective plates. The signals that are processed by these micromechanical capacitors are typically in the megahertz range and higher. The process for micromachining the micromechanical capacitor is similar to the process utilized in integrated circuit fabrication.
Claims10
A micromechanical capacitor comprising:
- a longitudinal plate formed on a first portion of a substrate;
- a dielectric layer formed on said longitudinal plate and on a second portion of the substrate;
- a plurality of transversal plates formed on said dielectric layer wherein a first portion of each of said plurality of transversal plates is in contact with said dielectric layer situated on the second portion of the substrate, and a second portion of each plate of said plurality of transversal plates is positioned over said dielectric layer formed on said longitudinal plate;
- and
- wherein:
- said longitudinal plate and each plate of said plurality of transversal plates are electrodes of said micromechanical capacitor;
- and
- the second portion of each plate of said plurality of transversal plates is at a distance from said dielectric layer.
A micromechanical capacitor comprising:
- a substrate;
- a first longitudinal plate formed on said substrate;
- a second longitudinal plate formed on said substrate;
- a dielectric layer formed on said first and second longitudinal plates;
- and
- at least one transversal plate having a first portion formed on said dielectric layer and having a second portion;
- and
- wherein:
- the first portion of said at least one transversal plate is in contact with said dielectric layer formed on said first longitudinal plate;
- and
- the second portion of said at least one transversal plate is situated at a distance from said dielectric layer formed on said second longitudinal plate.
A micromechanical capacitor comprising:
- a first conductive plate formed on a first portion of a substrate;
- a dielectric layer formed on said first conductive plate and on a second portion of the substrate;
- a plurality of second conductive plates formed on said dielectric layer wherein a first portion of each of said plurality of second conduct-ire plates is in contact with said dielectric layer situated on the second portion of the substrate, and a second portion of each plate of said plurality of second conductive plates is positioned over said dielectric layer formed on said first conductive plate;
- and
- wherein:
- said first conductive plate and each plate of said plurality of second conductive plates are electrodes of said micromechanical capacitor;
- and
- the second portion of each plate of said plurality of second conductive plates is at a distance from said dielectric layer.
A micromechanical capacitor comprising:
- a substrate;
- a first conductive plate formed on said substrate;
- a second conductive plate formed on said substrate;
- a dielectric layer formed on said first and second conductive plates;
- and
- a third conductive plate having a first portion formed on said dielectric layer and having a second portion;
- and
- wherein:
- the first portion of said third conductive plate is in contact with said dielectric layer formed on said first conductive plate;
- and
- the second portion of said third conductive plate is situated at a distance from said dielectric layer formed on said second conductive plate.
A micromechanical capacitor comprising:
- a longitudinal plate formed on a first portion of a substrate;
- a dielectric layer formed on said longitudinal plate and a second portion of the substrate
- a transversal plate formed on said dielectric layer wherein a first portion of said transversal plate is in contact with said dielectric layer formed on the second portion of the substrate, and a second portion of said transversal plate is positioned over said dielectric layer formed on said longitudinal plate;
- and
- wherein:
- said longitudinal and transversal plates are electrodes of said capacitor;
- the second portion of said transversal plate is at a distance from said dielectric layer;
- and
- an application of a voltage across said longitudinal and transversal plates causes said transversal plate to move so as to be in contact with said dielectric layer thereby changing the capacitance of said capacitor.
A micromechanical capacitor comprising:
- a first conductive plate formed on a first portion of a substrate;
- a dielectric layer formed on said first conductive plate and a second portion of the substrate
- a second conductive plate formed on said dielectric layer wherein a first portion of said second conductive plate is in contact with said dielectric layer formed on the second portion of the substrate, and a second portion of said second conductive plate is positioned over said dielectric layer formed on said first conductive plate;
- and
- wherein:
- said first and second conductive plates are electrodes of said capacitor;
- the second portion of said second conductive plate is at a distance from said dielectric layer;
- and
- an application of a voltage across said first and second conductive plates causes said second conductive plate to move so as to be in contact with said dielectric layer thereby changing the capacitance of said capacitor.
Dependencies are inferred from the claim text.