Thin film transistor and liquid crystal display using the same

Abstract

A thin film transistor comprises a source region, a drain region and a channel region formed in a thin film silicon region on an insulating substrate and a gate electrode formed via a gate insulating film on the channel region; at least one of the source region and the drain region has a high-concentration impurity region and a low-concentration impurity region; the channel region is in contact with the low-concentration impurity region; the low-concentration impurity region comprises at least a first region and a second region; the first region comprises a thin film having about the same thickness as the channel region; the second region comprises a thin film having about the same thickness as the high-concentration impurity region which is thicker than the first region. A liquid crystal display has TFT substrates wherein the thin film transistors are arranged in the form of a matrix. A liquid crystal display is equipped with a plurality of the thin film transistors, wherein either of an electrode of the source region and an electrode of the drain region is connected to a transparent electrode.

Dependencies are inferred from the claim text.