Optoelectronic semiconductor device with a semiconductor diode laser

Abstract

An optoelectronic semiconductor device with at least one laser and two mutually parallel, strip-shaped active regions, whose ends are optically coupled at one side, is a very suitable radiation source or amplifier, for example as a tunable radiation source. More than one kind of radiation is often present in such a device, whereas it is desirable for only one kind of radiation to pass through a gate of the device. To achieve this in prior devices, an additional component, such as a filter or isolator, is necessary. In a device according to the invention, the ends of the active regions are coupled to a first and a second radiation coupler at two respective ends, the first radiation coupler forming a first and a second gate, and the second radiation coupler forming a third and a fourth gate for the device, while the geometry and material properties of the radiation couplers and the active regions are so chosen that electromagnetic radiation generated, amplified, or reflected in the device during operation moves diagonally through device owing to constructive interference. In such a device, at most one kind of radiation will pass through a gate.

Dependencies are inferred from the claim text.